D478

AOD478 AOSMD | Alldatasheet

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General Description Product Summary VDS I D (at V GS =10V) 11A R DS(ON) (at V GS =10V) < 140m Ω R DS(ON) (at V GS = 4.5V) < 152m Ω 100% UIS Tested 100% R g Tested Symbol VDS The AOD478/AOI478 combines advanced trench MOSFET technology with a low resistance package to provide extremely low R DS(ON) . This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. V Maximum Units Parameter Absolute Maximum Ratings T A=25° C unless otherwise noted 100V Drain-Source Voltage 100 G D S TO252 DPAK Top View Bottom View G S D G S D G G D DS S Top View Bottom View TO251A IPAK VDS VGS IDM IAS , I AR EAS , E AR TJ, T STG Symbol t ≤ 10s Steady-State Steady-State R θJC mJ Maximum Junction-to-Ambient A ° C/W R θJA T C =25° C 2.1

23 TC =100° C

Junction and Storage Temperature Range -55 to 175 ° C Thermal Characteristics V A10 Drain-Source Voltage 100 V±20 Gate-Source Voltage

24 Pulsed Drain Current C

C Continuous Drain Current 2.5 Avalanche energy L=0.1mH C A TA=25° C IDSM ATA=70° C ID TC =25° C TC =100° C Power Dissipation B PD W Power Dissipation A PDSM WTA=70° C 1.3 TA=25° C Maximum Junction-to-Case ° C/W ° C/W Maximum Junction-to-Ambient A D 2.7 3.3 Rev 1: Nov. 2011 www.aosmd.com Page 1 of 6

VDS =100V, V GS =0V 1 TJ=55° C 5 IGSS 100 nA VGS(th) Gate Threshold Voltage 1.7 2.2 2.8 V ID(ON) 24 A 116 140 TJ=125° C 225 270 121 152 m Ω gFS 17 S VSD 0.76 1 V IS 12 A C iss 350 445 540 pF C oss 18 29 35 pF C rss 9 16 23 pF R g 1 2 3 Ω Q g(10V) 8 10.3 13 nC Q g(4.5V) 4 5.1 6.5 nC Q gs 1.6 nC Q gd 2.4 nC tD(on) 8 ns t 3 ns Turn-On Rise Time IS=1A,V GS =0V SWITCHING PARAMETERS Maximum Body-Diode Continuous Current G Input Capacitance R DS(ON) Static Drain-Source On-Resistance Diode Forward Voltage Reverse Transfer Capacitance VGS =0V, V DS =50V, f=1MHz VGS =10V, V DS =50V, I D =4.5A Gate Source Charge Gate Drain Charge Total Gate Charge V GS =10V, V DS =5V On state drain current Gate resistance V GS =0V, V DS =0V, f=1MHz Total Gate Charge VDS =5V, I D =4.5A Output Capacitance Turn-On DelayTime DYNAMIC PARAMETERS Electrical Characteristics (T J=25° C unless otherwise noted) STATIC PARAMETERS Parameter Conditions IDSS Drain-Source Breakdown Voltage ID =250 µA, V GS =0V µAZero Gate Voltage Drain Current Gate-Body leakage current Forward Transconductance V DS =V GS ID =250 µA VDS =0V, V GS = ±20V m Ω VGS =10V, I D =4.5A VGS =4.5V, I D =3A tr 3 ns tD(off) 17 ns tf 4.5 ns trr 14.5 21 27.5 ns Q rr 68 97 126 nC THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR TH E CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE N OT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY AR ISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Turn-On Rise Time Body Diode Reverse Recovery Charge IF=4.5A, dI/dt=500A/ µs Turn-Off DelayTime Body Diode Reverse Recovery Time I F=4.5A, dI/dt=500A/ µs VGS =10V, V DS =50V, R L=8.6 Ω , R GEN =3 Ω Turn-Off Fall Time A. The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25 °C. The Power dissipation P DSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175 °C may be used if the PCB allows it. B. The power dissipation P D is based on T J(MAX) =175 °C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature T J(MAX) =175 °C. Ratings are based on low frequency and duty cycles to keep initial T J =25 °C. D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX) =175 °C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25 °C. Rev 1: Nov. 2011 www.aosmd.com Page 2 of 6

Gate Charge Test Circuit & Waveform VDC DUT Vdd Vgs Vds Vgs RL Rg Vgs Vds 10% 90% Resistive Switching Test Circuit & Waveforms t t rd(on) ton td(off) tf toff Id L Vds BV Unclamped Inductive Switching (UIS) Test Circuit & Waveforms Vds DSS E = 1/2 LI AR AR Vdd Vgs Vgs Rg DUT VDC Vgs Id Vgs I Ig Vgs VDC DUT L Vgs Vds Isd Isd Diode Recovery Test Circuit & Waveforms Vds - Vds + IF AR dI/dt IRM rr Vdd Vdd Q = - Idt trr Rev 1: Nov. 2011 www.aosmd.com Page 6 of 6