AOD472A AOSMD | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 7
Technical content
Features
VDS (V) = 25V ID = 55A (VGS = 10V) RDS(ON) < 5.5mΩ (VGS = 10V) RDS(ON) < 9.5mΩ (VGS = 4.5V) 100% UIS Tested! 100% R g Tested! G TO-252 D-PAKTop View S Bottom View D G S G D S Alpha & Omega Semiconductor, Ltd. www.aosmd.com
TJ=55°C 50 IGSS 100 nA VGS(th) 1.2 2 2.5 V ID(ON) 100 A 4.4 5.5 TJ=125°C 6.6 8.2 7.8 9.5 mΩ gFS 65 S VSD 0.7 1 V IS 50 A Ciss 1500 1800 2200 pF Coss 340 445 580 pF Crss 200 285 400 pF Rg 1.1 1.6 2.4 Ω Qg(10V) 25 31 40 nC Qg(4.5V) 12 15 20 nC Qgs 3.5 4.8 7 nC Qgd 6.5 8.9 13 nC tD(on) 8n s tr 10.4 ns tD(off) 29 ns tf 9n s trr 9.5 12 15 ns Qrr 17 21 26 nC THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Body Diode Reverse Recovery Time Drain-Source Breakdown Voltage On state drain current ID=250µA, VGS=0V VGS=10V, VDS=5V VGS=10V, ID=30A Reverse Transfer Capacitance IF=30A, dI/dt=500A/µs VGS=0V, VDS=12.5V, f=1MHz SWITCHING PARAMETERS Electrical Characteristics (TJ=25°C unless otherwise noted) STATIC PARAMETERS Parameter Conditions IDSS µA Gate Threshold Voltage V DS=VGS, ID=250µA VDS=25V, VGS=0V VDS=0V, VGS=±20V Zero Gate Voltage Drain Current Gate-Body leakage current Forward Transconductance Diode Forward Voltage RDS(ON) Static Drain-Source On-Resistance mΩ IS=1A, VGS=0V VDS=5V, ID=30A VGS=4.5V, ID=20A Gate resistance V GS=0V, VDS=0V, f=1MHz Turn-Off Fall Time Total Gate Charge VGS=10V, VDS=12.5V, ID=30A Gate Source Charge Gate Drain Charge Total Gate Charge Body Diode Reverse Recovery Charge IF=30A, dI/dt=500A/µs Maximum Body-Diode Continuous CurrentG Input Capacitance Output Capacitance Turn-On DelayTime DYNAMIC PARAMETERS Turn-On Rise Time Turn-Off DelayTime VGS=10V, VDS=12.5V, RL=0.42Ω, RGEN=3Ω A: The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on RθJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. G. The maximum current rating is limited by bond-wires. H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. Rev1 : Nov. 2008 Alpha & Omega Semiconductor, Ltd. www.aosmd.com
Gate Charge Test Circuit & Waveform VDCDUT VddVgs Vds Vgs RL Rg Vgs Vds 10% 90% Resistive Switching Test Circuit & Waveforms tt rd(on) ton td(off) tf toff VddVgs Id Vgs Rg DUT VDC L Vgs Vds Id Vgs BV I Unclamped Inductive Switching (UIS) Test Circuit & Waveforms Ig Vgs VDC DUT L Vds Vgs Vds IsdIsd Diode Recovery Test Circuit & Waveforms Vds - Vds + I F AR DSS E = 1/2 LI dI/dt I RM rr VddVdd Q = - Idt ARAR trr Alpha & Omega Semiconductor, Ltd. www.aosmd.com