AOD472 AOSMD | Alldatasheet
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VDS (V) = 25V ID = 50A (VGS = 10V) RDS(ON) <6 mΩ (VGS = 10V) RDS(ON) <9.5 mΩ (VGS = 4.5V) General Description The AOD472 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Standard product AOD472 is Pb-free (meets ROHS & Sony 259 specifications). AOD472L is a Green Product ordering option. AOD472 and AOD472L are electrically identical. G D S G D S TO-252 D-PAK Top View Drain Connected to Tab Alpha & Omega Semiconductor, Ltd.
V TJ=55°C IGSS 100 nA VGS(th) 1.4 2.5 V ID(ON) 150 A TJ=125°C 7.5 7.6 9.5 gFS S VSD 0.74 V IS A Ciss 2050 2460 pF Coss 485 pF Crss 280 pF Rg 0.86 1.5 Ω Qg(10V) nC Qg(4.5V) nC Qgs nC Qgd 3.5 nC tD(on) 7.5 ns tr ns tD(off) ns tf ns trr ns Qrr nC THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/µs Maximum Body-Diode Continuous Current Input Capacitance Output Capacitance Turn-On DelayTime DYNAMIC PARAMETERS Turn-On Rise Time Turn-Off DelayTime VGS=10V, VDS=12.5V, RL=0.68Ω, RGEN=3Ω Gate resistance VGS=0V, VDS=0V, f=1MHz Turn-Off Fall Time Total Gate Charge VGS=10V, VDS=12.5V, ID=20A Gate Source Charge Gate Drain Charge Total Gate Charge mΩ Forward Transconductance Diode Forward Voltage Static Drain-Source On-Resistance IS=1A, VGS=0V VDS=5V, ID=20A VGS=4.5V, ID=20A RDS(ON) IDSS µA Gate Threshold Voltage VDS=VGS, ID=250µA VDS=20V, VGS=0V VDS=0V, VGS=±20V Zero Gate Voltage Drain Current Gate-Body leakage current Electrical Characteristics (TJ=25°C unless otherwise noted) STATIC PARAMETERS Parameter Conditions Body Diode Reverse Recovery Time Drain-Source Breakdown Voltage On state drain current ID=250uA, VGS=0V VGS=10V, VDS=5V VGS=10V, ID=30A Reverse Transfer Capacitance IF=20A, dI/dt=100A/µs VGS=0V, VDS=12.5V, f=1MHz SWITCHING PARAMETERS A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation P D is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C. D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX)=175°C. G. The maximum current rating is limited by bond-wires. H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. Rev1: March 2006 Alpha & Omega Semiconductor, Ltd.