AOD452 AOSMD | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 5
Technical content
Features
VDS (V) =25V ID = 55 A (VGS = 10V) RDS(ON) < 8.5 mΩ (VGS = 10V) RDS(ON) < 14 mΩ (VGS = 4.5V) General Description The AOD452 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Standard product AOD452 is Pb-free (meets ROHS & Sony 259 specifications). AOD452L is a Green Product ordering option. AOD452 and AOD452L are electrically identical. G D S G D S TO-252 D-PAK Top View Drain Connected to Tab Alpha & Omega Semiconductor, Ltd.
AOD452, AOD452L Symbol Min Typ Max Units BVDSS V TJ=55°C IGSS 100 nA VGS(th) 1.8 V ID(ON) 100 A 6.5 8.5 TJ=125°C 9.7 11.5 mΩ gFS S VSD 0.72 V IS A Ciss 1230 1476 pF Coss 315 pF Crss 190 pF Rg 1.2 Ω Qg(10V) 26.4 nC Qg(4.5V) 13.5 nC Qgs 3.9 nC Qgd 7.75 nC tD(on) 6.5 ns tr ns tD(off) 22.7 ns tf 6.2 ns trr 23.06 27.5 ns Qrr 15.25 nC THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev3:July 2005 Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/µs Maximum Body-Diode Continuous Current Input Capacitance Output Capacitance Turn-On DelayTime DYNAMIC PARAMETERS Turn-On Rise Time Turn-Off DelayTime VGS=10V, VDS=12.5V, RL=0.6Ω, RGEN=3Ω Gate resistance VGS=0V, VDS=0V, f=1MHz Turn-Off Fall Time Total Gate Charge VGS=10V, VDS=12.5V, ID=20A Gate Source Charge Gate Drain Charge Total Gate Charge mΩ IS=1A, VGS=0V VDS=5V, ID=10A VGS=4.5V, ID=20A Forward Transconductance Diode Forward Voltage RDS(ON) Static Drain-Source On-Resistance IDSS µA Gate Threshold Voltage VDS=VGS, ID=250µA VDS=20V, VGS=0V VDS=0V, VGS=±20V Zero Gate Voltage Drain Current Gate-Body leakage current Electrical Characteristics (TJ=25°C unless otherwise noted) STATIC PARAMETERS Parameter Conditions Body Diode Reverse Recovery Time Drain-Source Breakdown Voltage On state drain current ID=250uA, VGS=0V VGS=10V, VDS=5V VGS=10V, ID=30A Reverse Transfer Capacitance IF=20A, dI/dt=100A/µs VGS=0V, VDS=12.5V, f=1MHz SWITCHING PARAMETERS A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. G. The maximum current rating is limited by bond-wires. H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. Alpha & Omega Semiconductor, Ltd.