D4454

AOD4454 AOSMD | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 6

Technical content

General Description Product Summary VDS I D (at V GS =10V) 20A R DS(ON) (at V GS =10V) < 94m Ω R DS(ON) (at V GS =7V) < 110m Ω 100% UIS Tested 100% R g Tested Symbol VDS VGS IDM IAS , I AR EAS , E AR TJ, T STG Symbol t ≤ 10s Steady-State Steady-State R θJC TC =25° C 2.5

50 TC =100° C

Maximum Junction-to-Ambient A ° C/W R θJA Parameter Typ Max Units Junction and Storage Temperature Range -55 to 175 ° C Thermal Characteristics The AOD4454 combines advanced trench MOSFET technology with a low resistance package to provide extremely low R DS(ON) .This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. V Maximum Units Parameter Absolute Maximum Ratings T A=25° C unless otherwise noted 150V Drain-Source Voltage 150 V±20 Gate-Source Voltage

40 Pulsed Drain Current C

C 2.5 Continuous Drain Current 1.3 Avalanche energy L=0.1mH C A TA=25° C IDSM ATA=70° C ID T C =25° C TC =100° C Power Dissipation B PD W Power Dissipation A PDSM WTA=70° C 100 1.6 TA=25° C Maximum Junction-to-Case ° C/W ° C/W Maximum Junction-to-Ambient A D 1.2 1.5 G D S TO252 DPAK Top View Bottom View G S D G S D Rev 0: February 2011 www.aosmd.com Page 1 of 6

VDS =150V, V GS =0V 1 TJ=55° C 5 IGSS ±100 nA VGS(th) Gate Threshold Voltage 3.4 4 4.6 V ID(ON) 40 A 75.5 94 TJ=125° C 151 188 84 110 m Ω gFS 20 S VSD 0.72 1 V IS 46 A C iss 655 820 985 pF C oss 50 70 90 pF C rss 13 22 31 pF R g 0.7 1.4 2.1 Ω Q g(10V) 10 15 20 nC Q gs 4 nC Q gd 4.4 nC tD(on) 10.5 ns tr 5.5 ns tD(off) 14.5 ns tf 3 ns trr 20 32.5 45 ns Q rr 160 230 300 nC THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR TH E CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE N OT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY AR ISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. IS=1A,V GS =0V VDS =5V, I D =10A IF=10A, dI/dt=500A/ µs SWITCHING PARAMETERS Maximum Body-Diode Continuous Current G Input Capacitance Output Capacitance Turn-On DelayTime DYNAMIC PARAMETERS Turn-On Rise Time Reverse Transfer Capacitance V GS =0V, V DS =75V, f=1MHz Body Diode Reverse Recovery Charge IF=10A, dI/dt=500A/ µs Turn-Off DelayTime VGS =10V, V DS =75V, I D =10A Gate Source Charge Gate Drain Charge Gate resistance V GS =0V, V DS =0V, f=1MHz Turn-Off Fall Time Total Gate Charge R DS(ON) Static Drain-Source On-Resistance IDSS µA VDS =V GS ID =250 µA VDS =0V, V GS = ±20V Zero Gate Voltage Drain Current Gate-Body leakage current m Ω Body Diode Reverse Recovery Time Drain-Source Breakdown Voltage I D =250 µA, V GS =0V VGS =10V, V DS =5V VGS =10V, I D =10A On state drain current VGS =7V, I D =10A Forward Transconductance Diode Forward Voltage V GS =10V, V DS =75V, R L=7.5 Ω , R GEN =3 Ω Electrical Characteristics (T J=25° C unless otherwise noted) STATIC PARAMETERS Parameter Conditions A. The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25° C. The Power dissipation P DSM is based on R θJA and the maximum allowed junction temperature of 150° C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175° C may be used if the PCB allows it. B. The power dissipation P D is based on T J(MAX) =175° C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature T J(MAX) =175° C. Ratings are based on low frequency and duty cycles to keep initial T J =25° C. D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX) =175° C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25° C. Rev 0: February 2011 www.aosmd.com Page 2 of 6

Gate Charge Test Circuit & Waveform VDC DUT Vdd Vgs Vds Vgs RL Rg Vgs Vds 10% 90% Resistive Switching Test Circuit & Waveforms t t rd(on) ton td(off) tf toff Vdd Vgs Id Vgs Rg DUT VDC L Vgs Vds Id Vgs BV I Unclamped Inductive Switching (UIS) Test Circuit & Waveforms Ig Vgs VDC DUT L Vds Vgs Vds Isd Isd Diode Recovery Test Circuit & Waveforms Vds - Vds + IF AR DSS E = 1/2 LI dI/dt IRM rr Vdd Vdd Q = - Idt AR AR trr Rev 0: February 2011 www.aosmd.com Page 6 of 6