D4184

AOD4184_09 AOSMD | Alldatasheet

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General Description Product Summary VDS ID (at VGS=10V) 50A RDS(ON) (at VGS=10V) < 8mΩ RDS(ON) (at VGS = 4.5V) < 11mΩ 100% UIS Tested 100% Rg Tested Symbol V DS VGS IDM IAS, IAR EAS, EAR TJ, TSTG Symbol t ≤ 10s Steady-State Steady-State RθJC 120Pulsed Drain Current C Continuous Drain Current Parameter Typ Max TC=25°C 2.3 25TC=100°C Junction and Storage Temperature Range -55 to 175 °C Thermal Characteristics Units Maximum Junction-to-Ambient A °C/WRθJA V±20Gate-Source Voltage Drain-Source Voltage 40 The AOD4184/AOI4184 used advanced trench technology and design to provide excellent RDS(ON) with low gate charge. With the excellent thermal resistance of the DPAK package, those devices are well suited for high current load applications. V Maximum UnitsParameter Absolute Maximum Ratings T A=25°C unless otherwise noted 40V Avalanche energy L=0.1mH C mJ Avalanche Current C Continuous Drain Current 6.5 A35 A TA=25°C IDSM ATA=70°C ID TC=25°C TC=100°C Power Dissipation B PD W Power Dissipation A PDSM WTA=70°C 1.5 TA=25°C Maximum Junction-to-Case °C/W °C/WMaximum Junction-to-Ambient A D 2.4 G D S TO252 DPAK TopView Bottom View G S D G S D G GD D S S D Top View Bottom View TO-251A IPAK Rev0 : April 2009 www.aosmd.com Page 1 of 6

VDS=40V, VGS=0V 1 TJ=55°C 5 IGSS 100 nA VGS(th) Gate Threshold Voltage 1.7 2.2 2.6 V ID(ON) 120 A 6.7 8 TJ=125°C 11 13 8.5 11 mΩ gFS 37 S VSD 0.72 1 V IS 20 A Ciss 120 1500 1800 pF Coss 150 215 280 pF Crss 80 135 190 pF Rg 2 3.5 5 Ω Qg(10V) 21 27.2 33 nC Qg(4.5V) 10 13.6 16 nC Qgs 4.5 nC Qgd 6.4 nC tD(on) 6.4 ns tr 17.2 ns tD(off) 29.6 ns tf 16.8 ns trr 20 29 38 ns Qrr 18 26 34 nC COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/µs Maximum Body-Diode Continuous Current Input Capacitance Output Capacitance Turn-On DelayTime DYNAMIC PARAMETERS Turn-On Rise Time Turn-Off DelayTime VGS=10V, VDS=20V, RL=1Ω, RGEN=3Ω Gate resistance V GS=0V, VDS=0V, f=1MHz Turn-Off Fall Time Total Gate Charge VGS=10V, VDS=20V, ID=20A Gate Source Charge Gate Drain Charge Total Gate Charge mΩ IS=1A,VGS=0V VDS=5V, ID=20A VGS=4.5V, ID=15A Forward Transconductance Diode Forward Voltage RDS(ON) Static Drain-Source On-Resistance IDSS µA VDS=VGS ID=250µA VDS=0V, VGS= ±20V Zero Gate Voltage Drain Current Gate-Body leakage current Electrical Characteristics (TJ=25°C unless otherwise noted) STATIC PARAMETERS Parameter Conditions Body Diode Reverse Recovery Time Drain-Source Breakdown Voltage On state drain current ID=250µA, VGS=0V VGS=10V, VDS=5V VGS=10V, ID=20A Reverse Transfer Capacitance IF=20A, dI/dt=100A/µs VGS=0V, VDS=20V, f=1MHz SWITCHING PARAMETERS A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating. G. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. Rev 0 : Aug 2009 www.aosmd.com Page 2 of 6

Gate Charge Test Circuit & Waveform VDCDUT VddVgs Vds Vgs RL Rg Vgs Vds 10% 90% Resistive Switching Test Circuit & Waveforms tt rd(on) ton td(off) tf toff VddVgs Id Vgs Rg DUT VDC L Vgs Vds Id Vgs BV I Unclamped Inductive Switching (UIS) Test Circuit & Waveforms Ig Vgs VDC DUT L Vds Vgs Vds IsdIsd Diode Recovery Test Circuit & Waveforms Vds - Vds + I F AR DSS E = 1/2 LI dI/dt I RM rr VddVdd Q = - Idt ARAR trr Rev 0 : Aug 2009 www.aosmd.com Page 6 of 6