D3N40

AOD3N40 AOSMD | Alldatasheet

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400V,2.6A N-Channel MOSFET General Description Product Summary 500V@150 ℃ I D (at V GS =10V) 2.6A R DS(ON) (at V GS =10V) < 3.1 Ω 100% UIS Tested! 100% R g Tested! Symbol The AOD3N40 has been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC- DC applications. By providing low R DS(on) , C iss and C rss along with guaranteed avalanche capability this device can be adopted quickly into new and existing offline power supply designs. V DS Units Parameter Absolute Maximum Ratings T A =25° C unless otherwise noted Maximum AOD3N40 G S D G S D Top View TO252 DPAK Bottom View G D S Symbol VDS VGS IDM IAR EAR EAS Peak diode recovery dv/dt dv/dt TJ, T STG TL Symbol R θJA R θCS R θJC Maximum Junction-to-Ambient A,G TC =25° C Maximum Thermal Characteristics Units ° C/W 46 Parameter Typical W W/ oC Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds 300 ° C Junction and Storage Temperature Range -50 to 150 ° C Power Dissipation B V±30 Gate-Source Voltage TC =100° C A ID TC =25° C 2.6 1.6

5.6 Pulsed Drain Current

C Continuous Drain Current B V Units Parameter Maximum Drain-Source Voltage 400 mJ Avalanche Current C

34 Repetitive avalanche energy C

0.4 A1.5 Single pulsed avalanche energy H 68 mJ V/ns 5 PD Maximum Case-to-sink A Maximum Junction-to-Case D,F ° C/W ° C/W 2.1 0.5 2.5 AOD3N40 G S D G S D Top View TO252 DPAK Bottom View G D S Rev0: Oct 2011 Page 1 of 6

/∆TJ 0.4 V/ o C IGSS Gate-Body leakage current ±100 nΑ VGS(th) Gate Threshold Voltage 3.4 4 4.5 V R DS(ON) 2.5 3.1 Ω gFS 1.7 S VSD 0.8 1 V IS Maximum Body-Diode Continuous Current 2.6 A ISM 5.6 A C iss 145 186 225 pF C oss 15 26 37 pF C rss 1.2 2.1 4.1 pF R g 2.2 4.4 6.6 Ω Q g 3.3 4.2 5.1 nC Q gs 1.2 1.7 2.1 nC Q gd 0.5 1.0 1.5 nC tD(on) 14 ns tr 10 ns tD(off) 18 ns Maximum Body-Diode Pulsed Current Input Capacitance Output Capacitance Turn-On DelayTime I DSS Zero Gate Voltage Drain Current VDS =400V, V GS =0V Gate Drain Charge VDS =5V ID =250 µA VDS =320V, T J=125° C IS=1A,V GS =0V VDS =40V, I D =1A Forward Transconductance DYNAMIC PARAMETERS Diode Forward Voltage Gate resistance V GS =0V, V DS =0V, f=1MHz Total Gate Charge VGS =10V, V DS =320V, I D =2.6A Gate Source Charge µA V Zero Gate Voltage Drain Current ID=250 µA, VGS=0V VDS =0V, V GS =±30V Drain-Source Breakdown Voltage ID =250 µA, V GS =0V, T J=25° C ID =250 µA, V GS =0V, T J=150° C Electrical Characteristics (T J=25° C unless otherwise noted) STATIC PARAMETERS Parameter Conditions BV DSS Static Drain-Source On-Resistance VGS =10V, I D =1A Reverse Transfer Capacitance VGS =0V, V DS =25V, f=1MHz SWITCHING PARAMETERS Turn-On Rise Time Turn-Off DelayTime VGS =10V, V DS =200V, I D =2.6A, R G =25 ΩtD(off) 18 ns tf 8 ns trr 110 140 170 ns Q rr 0.5 0.64 0.8 µC THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR TH E CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE N OT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY AR ISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Body Diode Reverse Recovery Charge IF=2.6A,dI/dt=100A/ µs,V DS =100V Body Diode Reverse Recovery Time IF=2.6A,dI/dt=100A/ µs,V DS =100V Turn-Off DelayTime R G =25 Ω Turn-Off Fall Time A. The value of R θJA is measured with the device in a still air environment with T A =25 °C. B. The power dissipation P D is based on T J(MAX) =150 °C in a TO252 package, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature T J(MAX) =150 °C. D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX) =150 °C. G.These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25 °C. H. L=60mH, I AS =1.5A, V DD =150V, R G =10 Ω, Starting T J=25 °C Rev0: Oct 2011 www.aosmd.com Page 2 of 6

Gate Charge Test Circuit & Wav eform VD C D U T Vdd Vgs Vds Vgs R L R g Vgs Vds 10% 90% Resistiv e Switching Test Circuit & Wav eforms t t rd(o n) ton td(o ff) tf toff Vdd Vgs Id VDC L Vgs Vds Id BV I Unclamped Inductive Switching (UIS) Test Circuit & Wav eforms Vds AR DSS E = 1 /2 LI AR AR VDC Ig Vds D U T VD C Vgs Vgs 10V Qg Q gs Q gd C ha rge Gate Charge Test Circuit & Wav eform VD C D U T Vdd Vgs Vds Vgs R L R g Vgs Vds 10% 90% Resistiv e Switching Test Circuit & Wav eforms t t rd(o n) ton td(o ff) tf toff Vdd Vgs Id Vgs R g D U T VDC L Vgs Vds Id Vgs BV I Unclamped Inductive Switching (UIS) Test Circuit & Wav eforms Ig Vgs VD C D U T L Vds Vgs Vds Isd Isd Diode Recovery Test Circuit & Wav eforms Vd s - Vds + IF AR DSS E = 1 /2 LI dI/dt IRM rr Vdd Vdd Q = - Idt trr AR AR Rev0: Oct 2011 www.aosmd.com Page 6 of 6