CD5538B SS | Alldatasheet
Document overview
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- PDF pages: 3
Technical content
www.siliconsupplies.com Die Size (Unsawn) 330 x 330 12.99 x 12.99 µm mils Anode Pad Size 235 x 235 9.25 x 9.25 µm mils Die Thickness 200 7.87 µm mils Top Metal Composition Al Back Metal Composition AuAs 0.5W Zener Diode - CD5538B to CD5546B Silicon Planar Zener diode in bare die form – 5% tolerance Sharp Reverse Characteristics Low Reverse Current Levels High Reliability Gold Back Metal High Reliability Tested Grades. Rev 1.0 05/04/19 Features: Die Dimensions in µm (mils) 330 (12.99) 330 (112.99) 235 (9.25) 200 (7.87) CHIP BACKSIDE IS CATHODE
Ordering Information
The following part suffixes apply: No suffix - Commercial grade die “ H”– Hi-rel grade die + MIL-STD-38534 Class H LAT “ K” – Hi-rel grade die + MIL-STD-38534 Class K LAT. LAT = Lot acceptance Test. For information on Hi-Rel LAT flows please see below. www.siliconsupplies.com\\bare-die-lot-qualification Supply Formats: Mechanical Specification Default – Die in Waffle Pack (400 per tray capacity) Sawn Wafer on Tape – By specific request Unsawn Wafer – By specific request With additional electrical sel ection – By specific request 235 (9.25) ANODE
Absolute Maximum Ratings1 TA = 25°C unless otherwise stated PARAMETER 0.5W Zener Diode - CD5538B to CD5546B Rev 1.0 05/04/19 SYMBOL VALUE UNIT Power Dissipation2 P TOT 500 mW Junction Temperature TJ 175 Storage Temperature Range TS -65 to +175 °C Forward Voltage @ IF = 200mA VF 1.1 V ZENER VOLTAGE RANGE TEST CURRENT REVERSE LEAKAGE CURRENT ZENER3 IMPEDANCE ZENER REG4 LOW VZ CURRENT MAX CURRENT NOISE DENSITY VZ @ IZT IZT IR @ VR ZZT @ IZT ∆VZ IZL IZM ND @ 250µA V DEVICE µA Ω V mA mA µV/√Hz mA V Electrical Characteristics TA = 25°C unless otherwise stated Page 2 of 3 www.siliconsupplies.com
www.siliconsupplies.com 0.5W Zener Diode - CD5538B to CD5546B Rev 1.0 05/04/19 Electrical Characteristics TA = 25°C unless otherwise stated ZENER VOLTAGE RANGE3 TEST CURRENT REVERSE LEAKAGE CURRENT ZENER4 IMPEDANCE ZENER REG5 LOW VZ CURRENT MAX CURRENT NOISE DENSITY IZT IR @ VR ZZT @ IZT ∆VZ IZL IZM ND @ 250µA DISCLAIMER: The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Silicon Supplies Ltd hereby disclaims any and all warranties and liabilities of any kind. LIFE SUPPORT POLICY: Silicon Supplies Ltd components may be used in life support devices or systems only with the express written approval of Silicon Supplies Ltd, if a failure of such components can reasonably be expected to cause the failure of that life support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 1. Operation above the absolute maximum rating may cause device failure. Operation at the absolute maximum ratings, for extended periods, may reduce device reliability. 2. Assembled in DO-35 package. Performance in die form subject to assembly heat sinking and die attach methods. 3. No Suffix type numbers are ±20% with guaranteed limits for only VZ, lR, and VF. Units with “A” suffix are ±10% with guaranteed limits for VZ, lR, and VF. Units with guaranteed limits for all six parameters are indicated by a “B” suffix for +5.0% units, “C” suffix for +2.0% and “D” suffix for +1.0% 4. Zener impedance is derived by superimposing on lZT a 60Hz rms AC current equal to 10% of lZT 5. ΔVZ is the maximum difference between VZ @ IZT and VZ at IZL measured with the device junction in thermal equilibrium at an ambient temperature of +25° ± 3°C. VZ @ IZT DEVICE µA Ω V mA mA µV/√Hz V mA V