BTP981 SS | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 4
Technical content
PNP Transistor Bare Die ‐ BTP981 General purpose high voltage switch in bare die form Complement to NPN BTN991 High Voltage: V CEO = -600V High Speed: t f ≤ 1µs Characterized at temperature extremes Silver backside metalization for solder attach Rev 1.0 02/09/17 Features: Die Dimensions in µm (mils) Ordering Information: The following part suffixes apply: No suffix - MIL-STD-750 /2072 Visual Inspection “ H” - MIL-STD-750 /2072 Visual Inspection + MIL-STD-38534 Class H LAT “ K” - MIL-STD-750 /2072 Visual Inspection + MIL-STD-38534 Class K LAT LAT = Lot Acceptance Test. For further information on LAT process flows see below. www.siliconsupplies.com\\quality\\bare-die-lot-qualification 1200 (47.24) 132 (5.20) 104 (5.20) 116 (4.57) 132 (5.20) B E 1200 (47.24) DIE BACK = COLLECTOR E = EMITTER B = BASE Supply Formats: Mechanical Specification Default – Die in Waffle Pack (400 per tray capacity) Die Size (Excluding Saw Street) 1200 x 1200 47.24 x 47.24 µm mils Sawn Wafer on Tape – Specific request Unsawn Wafer – Specific request 104 x 132 Base Pad Size 3.94 x 3.94 µm mils 132 x 116 Emitter Pad Size 3.94 x 3.94 With additional electrical selection – Specific request Die Thickness 230 (±20) 9.06 (±0.79) µm mils Top Metal Composition Sawn as pairs or adjacent pair pick – Specific request Al Back Metal Composition Ti/Ni/Ag Page 1 of 4 www.siliconsupplies.com A ll data sheet.com
www.siliconsupplies.com PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Collector-Base Breakdown Voltage V(BR)CBO I C = -1mA -600 - - V Collector-Emitter Breakdown Voltage V(BR)CEO I C = -1mA -600 - - V Emitter-Base Breakdown Voltage V(BR)EBO I E = -100µA -7 - - V Collector Cut-off Current ICBO V CB = -600V - - -1 µA Collector Cut-off Current ICEO V CB = -600V - - -3 µA Emitter Cut-off Current IEBO V EB = -7V - - -1 µA ON CHARACTERISTICS Forward-Current Transfer Ratio hFE V CE = -5V, IC = -10mA 54 - 310 - Collector-Emitter Saturation Voltage VCE(sat) I C = -10mA, IB = -1mA - - -0.5 V Base Saturation Voltage VBE(sat) I C = -10mA, IB = -1mA - - -1 V SMALL SIGNAL CHARACTERISTICS1 Transition Frequency fT V CE = -10V, IE = 10mA - 25 - MHz Output Capacitance Cobo V CB = -10V, IE = 0, f = 1MHz - 20 - pF Turn-on time ton - - 0.5 µs Storage time tstg - - 5 µs Fall time tf VCC = -250V, IC = -10mA, -IB1 = -IB2 = -1mA - - 0.5 µs Electrical Characteristics TA = 25°C unless otherwise stated Absolute Maximum Ratings TA = 25°C unless otherwise stated PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO -600 V Collector-Emitter Voltage VCEO -600 V Emitter-Base Voltage VEBO -7 V Collector Current IC -280 mA Collector Current (Pulse) ICM -560 mA Junction Temperature TJ 150 °C Storage Temperature Tstg -55 to 150 °C PNP Transistor Bare Die ‐ BTP981 Rev 1.0 07/07/17 1. Not production testing in die form. Characterized by chip design and tested in package. Figure 1 – DC Current Gain Vs. Collector Current Figure 2– Collector Current Vs. Collector‐to‐Emitter Voltage Typical Electrical Characteristics hfe – DC Current Gain VCE – Collector-to-Emitter Voltage - V IC – Collector Current - mA VCE – Collector-to-Emitter Voltage - V A ll data sheet.com
www.siliconsupplies.com PNP Transistor Bare Die ‐ BTP981 Rev 1.0 07/07/17 DISCLAIMER: The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Silicon Supplies Ltd hereby disclaims any and all warranties and liabilities of any kind. LIFE SUPPORT POLICY: Silicon Supplies Ltd components may be used in life support devices or systems only with the express written approval of Silicon Supplies Ltd, if a failure of such components can reasonably be expected to cause the failure of that life support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. A ll data sheet.com