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Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 3
Technical content
Features
- N-channel
- Enhancement mode
- Ultra Logic level (1.8V rated)
- Avalanche rated
- Qualified according to AEC Q101
- 100% lead-free; RoHS compliant
- Halogen-free according to IEC61249-2-21 Maximum ratings, at T j =25 °C, unless otherwise specified Parameter Symbol Conditions Unit Continuous drain current I D T A =25 °C 2.3 A T A =70 °C 1.9 Pulsed drain current I D,pulse T A =25 °C 9.3 Avalanche energy, single pulse E AS I D =2.3 A, R GS =25 Ω 10.8 mJ Reverse diode dv /dt dv /dt I D =2.3 A, V DS =16 V, di /dt =200 A/µs, T j,max =150 °C 6 kV/µs Gate source voltage V GS ±8 V Power dissipation P tot T A =25 °C W Operating and storage temperature T j , T stg -55 ... 150 °C ESD Class JESD22-A114 -HBM 0(<250V) Soldering Temperature 260 °C IEC climatic category; DIN IEC 68-1 55/150/56 Value 0.5 PG-SOT23 V DS V R DS(on),max V GS =2.5 V mΩ V GS =1.8 V I D 2.3 A Product Summary Type Package Tape and Reel Information Marking Lead Free Packing BSS806N SOT23 H6327: 3000 pcs/ reel YEs Yes Non dry 1 of 3sales@zpsemi.com www.zpsemi.com
Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics Thermal resistance, junction - ambient R thJA minimal footprint - - 250 K/W Electrical characteristics, at T j =25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS = 0 V, I D = 250 µA 20 - - V Gate threshold voltage V GS(th) V DS GS , I D =11 µA 0.3 0.55 0.75 Drain-source leakage current I DSS V DS =20 V, V GS =0 V, T j =25 °C --1 μA V DS =20 V, V GS =0 V, T j =150 °C - - 100 Gate-source leakage current I GSS V GS =8 V, V DS =0 V - - 100 nA Drain-source on-state resistance R DS(on) V GS =1.8 V, I D =1.3 A -5 7 8 2 mΩ V GS =2.5 V, I D =2.3 A -4 1 5 7 Transconductance g fs DS |>2|I D DS(on)max I D =1.9 A 9- S Values Performed on 40mm FR4 PCB. The traces are 1mm wide, 70μm thick and 20mm long; they are present on both sides of the PCB. BSS806N 2 of 3sales@zpsemi.com www.zpsemi.com
Parameter Symbol Conditions Unit min. typ. max. Dynamic characteristics Input capacitance C iss - 370 529 pF Output capacitance C oss - 118 169 Reverse transfer capacitance C rss -2 0 2 9 Turn-on delay time t d(on) - 7.5 - ns Rise time t r - 9.9 - Turn-off delay time t d(off) - 12.0 - Fall time t f - 3.7 - Gate Charge Characteristics Gate to source charge Q gs - 0.55 - nC Gate to drain charge Q gd - 0.58 - Gate charge total Q g - 1.7 - Gate plateau voltage V plateau - 1.5 - V Reverse Diode Diode continous forward current I S - - 0.5 A Diode pulse current I S,pulse - - 9.3 Diode forward voltage V SD V GS =0 V, I F =2.3 A, T j Reverse recovery time t rr -1 1- n s Reverse recovery charge Q rr - 3.3 - nC V R =10 V, I F =2.3 A, di F /dt =100 A/µs T A =25 °C Values V GS =0 V, V DS =10 V, f =1 MHz V DD =10 V, V GS =2.5 V, I D =2.3A, R G =6 Ω V DD =10 V, I D =2.3 A, V GS =0 to 2.5 V BSS806N 3 of 3sales@zpsemi.com www.zpsemi.com