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Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 3
Technical content
Features
- N-channel
- Enhancement mode
- Logic level (4.5V rated)
- Avalanche rated
- Qualified according to AEC Q101
- 100%lead-free; RoHS compliant
- Halogen-free according to IEC61249-2-21 Maximum ratings, at T j =25 °C, unless otherwise specified Parameter Symbol Conditions Unit Continuous drain current I D T A =25 °C 1.4 A T A =70 °C 1.1 Pulsed drain current I D,pulse T A =25 °C 5.6 Avalanche energy, single pulse E AS I D =1.4 A, R GS =25 Ω 3.7 mJ Reverse diode dv /dt dv /dt I D =1.4 A, V DS =16 V, di /dt =200 A/µs, T j,max =150 °C 6 kV/µs Gate source voltage V GS ±20 V Power dissipation P tot T A =25 °C W Operating and storage temperature T j , T stg -55 ... 150 °C ESD Class JESD22-A114 -HBM 0 (<250V) Soldering Temperature 260 °C IEC climatic category; DIN IEC 68-1 55/150/56 Value 0.5 PG-SOT23 Type Package Tape and Reel Information Marking Lead Free Packing BSS316N SOT23 H6327: 3000 pcs/ reel SYs Yes Non dry V DS V R DS(on),max V GS =10 V 160 mΩ V GS =4.5 V 280 I D 1.4 A Product Summary 1 of 3sales@zpsemi.com www.zpsemi.com
Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics Thermal resistance, junction - ambient R thJA minimal footprint - - 250 K/W Electrical characteristics, at T j =25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS =0 V, I D =250 µA 30 - - V Gate threshold voltage V GS(th) V DS GS , I D Drain-source leakage current I DSS V DS =30 V, V GS =0 V, T j =25 °C --1 μA V DS =30 V, V GS =0 V, T j =150 °C - - 100 Gate-source leakage current I GSS V GS =30 V, V DS =0 V - - 100 nA Drain-source on-state resistance R DS(on) V GS =4.5 V, I D =1.1 A - 191 280 mΩ V GS =10 V, I D =1.4 A - 119 160 Transconductance g fs DS |>2|I D DS(on)max I D =1.1 A 2.3 - S Values Performed on 40mm FR4 PCB. The traces are 1mm wide, 70μm thick and 20mm long; they are present on both sides of the PCB. BSS316N 2 of 3sales@zpsemi.com www.zpsemi.com
Parameter Symbol Conditions Unit min. typ. max. Dynamic characteristics Input capacitance C iss -7 1 9 4 p F Output capacitance C oss -2 6 3 5 Reverse transfer capacitance C rss -57 Turn-on delay time t d(on) - 3.4 - ns Rise time t r - 2.3 - Turn-off delay time t d(off) - 5.8 - Fall time t f -1- Gate Charge Characteristics Gate to source charge Q gs - 0.3 - nC Gate to drain charge Q gd - 0.2 - Gate charge total Q g - 0.6 - Gate plateau voltage V plateau - 3.4 - V Reverse Diode Diode continous forward current I S - - 0.5 A Diode pulse current I S,pulse - - 5.6 Diode forward voltage V SD V GS =0 V, I F =1.4 A, T j =25 °C - 0.8 1.1 V Reverse recovery time t rr - 9.1 - ns Reverse recovery charge Q rr - 2.6 - nC V R =10 V, I F =1.4 A, di F /dt =100 A/µs T A =25 °C Values V GS =0 V, V DS =15 V, f =1 MHz V DD =15 V, V GS =10 V, I D =1.4 A, R G =6 Ω V DD =15 V, I D =1.4 A, V GS =0 to 5 V BSS316N 3 of 3sales@zpsemi.com www.zpsemi.com