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Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 3
Technical content
Features
- P-channel
- Enhancement mode
- Logic level (4.5V rated)
- Avalanche rated
- Qualified according to AEC Q101
- 100% lead-free; RoHS compliant
- Halogen-free according to AEC61249-2-21 Maximum ratings, at T j =25 °C, unless otherwise specified Parameter Symbol Conditions Unit Continuous drain current I D T A =25 °C -1.5 A T A =70 °C -1.18 Pulsed drain current I D,pulse T A =25 °C -6 Avalanche energy, single pulse E AS I D =-1.5 A, R GS =25 Ω 11 mJ Reverse diode dv /dt dv /dt I D =-1.5 A, V DS =-16V, di /dt =-200A/µs, T j,max =150 °C 6 kV/µs Gate source voltage V GS ±20 V Power dissipation P tot T A =25 °C W Operating and storage temperature T j , T stg -55 ... 150 °C ESD Class JESD22-A114 -HBM 0 (<250V) V Soldering Temperature 260 °C °C IEC climatic category; DIN IEC 68-1 55/150/56 °C Value 0.5 PG-SOT-23 Type Package Tape and Reel Information Marking Lead Free Packing BSS315P PG-SOT23 H6327: 3000 pcs/ reel YCs Yes Non dry V DS V R DS(on),max V GS =10 V 150 mΩ V GS =4.5 V 270 I D -1.5 A Product Summary 1 of 3sales@zpsemi.com www.zpsemi.com
Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics Thermal resistance, junction - ambient R thJA minimal footprint - - 250 K/W Electrical characteristics, at T j =25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS = 0V, I D =-250µA -30 - - V Gate threshold voltage V GS(th) V DS GS , I D Drain-source leakage current I DSS V DS =-30V, V GS =0 V, T j =25 °C -- - 1 μA V DS =-30V, V GS =0V, T j =150 °C - - -100 Gate-source leakage current I GSS V GS =-20V, V DS =0V - - -100 nA Drain-source on-state resistance R DS(on) V GS =-4.5 V, I D =-1.1 A - 177 270 mΩ V GS =-10 V, I D =-1.5 A - 113 150 Transconductance g fs DS |>2|I D DS(on)max I D =-1.18 A - 2.7 - S Values Performed on 40mm FR4 PCB. The traces are 1mm wide, 70μm thick and 20mm long; they are present on both sides of the PCB. BSS315P 2 of 3sales@zpsemi.com www.zpsemi.com
Parameter Symbol Conditions Unit min. typ. max. Dynamic characteristics Input capacitance C iss - 212 282 pF Output capacitance C oss -6 9 9 1 Reverse transfer capacitance C rss -5 6 8 4 Turn-on delay time t d(on) - 5.0 - ns Rise time t r - 6.5 - Turn-off delay time t d(off) - 14.3 - Fall time t f - 7.5 - Gate Charge Characteristics Gate to source charge Q gs - -0.56 - nC Gate to drain charge Q gd - -1.2 - Gate charge total Q g - -2.3 - Gate plateau voltage V plateau - -2.9 - V Reverse Diode Diode continous forward current I S - - -0.5 A Diode pulse current I S,pulse -- - 6 Diode forward voltage V SD V GS =0 V, I F =-1.5 A, T j Reverse recovery time t rr - 8.2 - ns Reverse recovery charge Q rr - 2.1 - nC V R =10 V, I F =-1.5 A, di F /dt =100 A/µs T A =25 °C Values V GS =0 V, V DS =15 V, f =1 MHz V DD =-15V, V GS =-10 V, I D =-1.5 A, R G =6 Ω V DD =-15 V, I D =-1.5 A, V GS =0 to 5 V BSS315P 3 of 3sales@zpsemi.com www.zpsemi.com