DATASHEET SEARCH SITE | WWW.ALLDATASHEET.COM

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 3

Technical content

Features

  • P-channel
  • Enhancement mode
  • Logic level (4.5V rated)
  • ESD protected
  • Qualified according AEC Q101
  • 100% Lead-free; RoHS compliant
  • Halogen-free according to IEC61249-2-21 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Unit Continuous drain current I D T A=25 °C -1.5 A T A=70 °C -1.2 Pulsed drain current I D,pulse T A=25 °C -6.1 Avalanche energy, single pulse E AS I D=-1.5 A, R GS=25 W 6 mJ Reverse diode dv /dt dv /dt I D=-1.5 A, V DS=-16 V, di /dt =-200A/µs, T j,max=150 °C 6 kV/µs Gate source voltage V GS ±20 V Power dissipation1) P tot T A=25 °C W Operating and storage temperature T j, T stg -55 ... 150 °C ESD Class JESD22-A114 -HBM 1000V to 2000V Soldering Temperature 260 °C °C IEC climatic category; DIN IEC 68-1 55/150/56 °C Value 0.5 PG-SOT-23 VDS 30 V RDS(on),max VGS=-10 V 140 mW VGS=-4.5 V 230 ID -1.5 A Product Summary Type Package Tape and Reel Information Marking Lead Free Packing BSS314PE PG-SOT23 H6327: 3000 pcs/ reel YGs Yes Non dry 1 of 3sales@zpsemi.com www.zpsemi.com

Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics Thermal resistance, junction - ambient R thJA minimal footprint 1) - - 250 K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS= 0V, I D=-250µA -30 - - V Gate threshold voltage V GS(th) V DS=VGS, I D=-6.3µA -1 -1.5 -2 Drain-source leakage current I DSS V DS=-30V, V GS=0 V, T j=25 °C - - -1 mA V DS=-30V, V GS=0V, Gate-source leakage current I GSS V GS=-20V, V DS=0V - - -5 μA Drain-source on-state resistance R DS(on) V GS=-4.5V, I D=-1.2A - 153 230 mW V GS=-10V, I D=-1.5A - 107 140 Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=-1.2 A 3 - S Values 1) Performed on 40mm2 FR4 PCB. The traces are 1mm wide, 70μm thick and 20mm long; they are present on both sides of the PCB. BSS314PE 2 of 3sales@zpsemi.com www.zpsemi.com

Parameter Symbol Conditions Unit min. typ. max. Dynamic characteristics Input capacitance C iss - 221 294 pF Output capacitance C oss - 126 168 Reverse transfer capacitance Crss - 7 11 Turn-on delay time t d(on) - 5.1 - ns Rise time t r - 3.9 - Turn-off delay time t d(off) - 12.4 - Fall time t f - 2.8 - Gate Charge Characteristics Gate to source charge Q gs - -0.7 - nC Gate to drain charge Q gd - -0.3 - Gate charge total Q g - -2.9 - Gate plateau voltage V plateau - -3.2 - V Reverse Diode Diode continous forward current I S - - -0.5 A Diode pulse current I S,pulse - - -6.1 Diode forward voltage V SD V GS=0 V, I F=-1.5A, T j=25 °C - 0.8 1.1 V Reverse recovery time t rr - 12.5 - ns Reverse recovery charge Q rr - 4.3 - nC V R=-15 V, I F=-1.5A, di F/dt =100 A/µs T A=25 °C Values V GS=0 V, V DS=-15 V, f =1 MHz V DD=-15V, V GS=-10 V, I D=-1.5 A, R G=6 W V DD=-15V, I D=-1.5A, V GS=0 to -10 V BSS314PE 3 of 3sales@zpsemi.com www.zpsemi.com