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Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 3
Technical content
Features
- P-channel
- Enhancement mode
- Super Logic Level (2.5V rated)
- Avalanche rated
- Qualified according to AEC Q101
- 100% lead-free; RoHS compliant
- Halogen-free according to IEC61249-2-21 Maximum ratings, at T j =25 °C, unless otherwise specified Parameter Symbol Conditions Unit Continuous drain current I D T A =25 °C -1.5 A T A =70 °C -1.18 Pulsed drain current I D,pulse T A =25 °C -6 Avalanche energy, single pulse E AS I D =-1.5 A, R GS =25 Ω 11 mJ Reverse diode dv /dt dv /dt I D =-1.5 A, V DS =-16V, di /dt =-200A/µs, T j,max =150 °C 6 kV/µs Gate source voltage V GS ±12 V Power dissipation P tot T A =25 °C W Operating and storage temperature T j , T stg -55 ... 150 °C ESD Class JESD22-A114 -HBM 0 (<250V) V Soldering Temperature 260 °C °C IEC climatic category; DIN IEC 68-1 55/150/56 °C Value 0.5 PG-SOT23 Type Package Tape and Reel Information Marking Lead Free Packing BSS215P PG-SOT23 H6327: 3000 pcs/ reel YDs Yes Non dry V DS -20 V R DS(on),max V GS =-4.5 V 150 mΩ V GS =-2.5 V 280 I D -1.5 A Product Summary 1 of 3sales@zpsemi.com www.zpsemi.com
Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics Thermal resistance, junction - ambient R thJA minimal footprint - - 250 K/W Electrical characteristics, at T j =25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS =0 V, I D =-250 µA -20 - - V Gate threshold voltage V GS(th) V DS GS , I D Drain-source leakage current I DSS V DS =-20V, V GS =0 V, T j =25 °C -- - 1 μA V DS =-20V, V GS =0V, T j =150 °C - - -100 Gate-source leakage current I GSS V GS =-12V, V DS =0V - - -100 nA Drain-source on-state resistance R DS(on) V GS =2.5 V, I D =-1.1 A - 166 280 mΩ V GS =4.5 V, I D =-1.5 A - 105 150 Transconductance g fs DS |>2|I D DS(on)max I D =1.18 A - 4.5 - S Values Performed on 40mm FR4 PCB. The traces are 1mm wide, 70μm thick and 20mm long; they are present on both sides of the PCB. BSS215P 2 of 3sales@zpsemi.com www.zpsemi.com
Parameter Symbol Conditions Unit min. typ. max. Dynamic characteristics Input capacitance C iss - 260 346 pF Output capacitance C oss - 102 135 Reverse transfer capacitance C rss - 85 128 Turn-on delay time t d(on) - 6.7 - ns Rise time t r - 9.7 - Turn-off delay time t d(off) - 14.5 - Fall time t f - 14.0 - Gate Charge Characteristics Gate to source charge Q gs - -0.49 - nC Gate to drain charge Q gd - -1.9 - Gate charge total Q g - -3.6 - Gate plateau voltage V plateau - -1.9 - V Reverse Diode Diode continous forward current I S - - -0.5 A Diode pulse current I S,pulse -- - 6 Diode forward voltage V SD V GS =0 V, I F =-1.5 A, T j Reverse recovery time t rr - 21.0 - ns Reverse recovery charge Q rr - -3.7 - nC V R =10 V, I F =-1.5 A, di F /dt =100 A/µs T A =25 °C Values V GS =0 V, V DS =-15 V, f =1 MHz V DD =-10 V, V GS =-4.5 V, I D =-1.5 A, R G =6 Ω V DD =16 V, I D =-1.5 A, V GS =0 to -4.5 V BSS215P 3 of 3sales@zpsemi.com www.zpsemi.com