BSS138 ZPSEMI | Alldatasheet
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Technical content
N-Channel Enhancement Mode MOSFET Feature z 50V/0.2A, R DS(ON) = 3.5Ω(MAX) @V GS = 5V. Id = 0.2A R DS(ON) = 10Ω(MAX) @V GS = 2.75V. Id = 0.2A z Super High dense cell design for extremely low R DS(ON) . z Reliable and Rugged. z Low Threshold Voltage ( 0.5V— 1.5V ) Make it Ideal for Low Voltage Applications. z SOT-23 for Surface Mount Package. SOT-23 A pplications Power Management in DC/DC Converters、 Portable and Battery-powered Products. Absolute Maximum Ratings T A =25℃ Unless Otherwise noted Parameter Symbol Limit Units Drain-Source Voltage V DS 50 V Gate-Source Voltage V GS ±20 V Drain Current-Continuous I D 0.2 A
Electrical Characteristics
T A =25℃ Unless Otherwise noted Parameter Symbol Test Conditions Min Typ. Max Units Off Characteristics Drain to Source Breakdown Voltage BVDSS VGS=0V, ID=250µA 50 - - V VDS=50V, VGS=0V - - 0.5 Zero-Gate Voltage Drain Current IDSS VDS=25V, VGS=0V - - 0.1 µA Gate Body Leakage Current, Forward IGSSF VGS=20V, VDS=0V - - 100 nA Gate Body Leakage Current, Reverse IGSSR VGS=-20V, VDS=0V - - -100 nA On Characteristics Gate Threshold Voltage VGS(th) VGS= VDS, ID=1.0 mA 0.5 - 1.5 V VGS =5.0V, ID =0.2A - - 3.5 Ω Static Drain-source On-Resistance RDS(ON) VGS =2.75V, ID =0.2A - - 10 Ω Drain-Source Diode Characteristics and Maximum Ratings Drain-Source Diode Forward Voltage VSD VGS =0V, IS=0.2A 2.5 V sales@zpsemi.com www.zpsemi.com BSS138 1 of 3