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Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 3

Technical content

Features

  • N-channel
  • Enhancement mode
  • Logic level (4.5V)
  • Avalanche rated
  • Footprint compatible to SOT23
  • dv /dt rated
  • Pb-free lead plating; RoHS compliant
  • Qualified according to AEC Q101 Maximum ratings, at T j =25 °C, unless otherwise specified Parameter Symbol Conditions Unit Continuous drain current I D T A =25 °C 3.7 A T A =70 °C 2.9 Pulsed drain current I D,pulse T A =25 °C 14.7 Avalanche energy, single pulse E AS I D =3.7 A, R GS =25 Ω 30 mJ Reverse diode dv /dt dv /dt I D =3.7 A, V DS =16 V, di /dt =200 A/µs, T j,max =150 °C 6 kV/µs Gate source voltage V GS ±20 V Power dissipation P tot T A =25 °C 0.5 W Operating and storage temperature T j , T stg -55 ... 150 °C ESD Class JESD22-A114-HMB 0 (0V to 250V) Soldering Temperature 260 °C IEC climatic category; DIN IEC 68-1 55/150/56 Value Type Package Tape and Reel Information Marking Lead Free Packing BSR302N PG-SC-59 L6327 = 3000 pcs. / reel LEs Yes Non dry PG-SC-59 1 2 V DS V R DS(on),max V GS =10 V mΩ V GS =4.5 V I D 3.7 A Product Summary 1 of 3sales@zpsemi.com www.zpsemi.com

Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics Thermal resistance, junction - minimal footprint R thJA - - 250 K/W Electrical characteristics, at T j =25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS =0 V, I D =250 µA 30 - - V Gate threshold voltage V GS(th) V DS GS , I D =30 µA 1.2 1.7 2 Drain-source leakage current I DSS V DS =30 V, V GS =0 V, T j =25 °C --1 μA V DS =30 V, V GS =0 V, T j =150 °C - - 100 Gate-source leakage current I GSS V GS =20 V, V DS =0 V - - 100 nA Drain-source on-state resistance R DS(on) V GS =4.5 V, I D =2.9 A -2 6 3 6 mΩ V GS =10 V, I D =3.7 A -1 8 2 3 Transconductance g fs DS |>2|I D DS(on)max I D =3.7 A 12 - S Values BSR302N 2 of 3sales@zpsemi.com www.zpsemi.com

Parameter Symbol Conditions Unit min. typ. max. Dynamic characteristics Input capacitance C iss - 564 750 pF Output capacitance C oss - 202 269 Reverse transfer capacitance C rss -2 8 4 3 Turn-on delay time t d(on) - 6.8 - ns Rise time t r - 3.2 - Turn-off delay time t d(off) - 16.2 - Fall time t f - 2.2 - Gate Charge Characteristics Gate to source charge Q gs - 1.6 2.2 nC Gate to drain charge Q gd - 1.1 1.7 Gate charge total Q g - 4.4 6.6 Gate plateau voltage V plateau - 2.9 - V Reverse Diode Diode continous forward current I S - - 0.8 A Diode pulse current I S,pulse - - 14.7 Diode forward voltage V SD V GS =0 V, I F =3.7 A, T j =25 °C - 0.8 1.2 V Reverse recovery time t rr - 13.5 ns Reverse recovery charge Q rr - 5.0 - nC V R =15 V, I F =3.7 A, di F /dt =100 A/µs T A =25 °C Values V GS =0 V, V DS =15 V, f =1 MHz V DD =15 V, V GS =10 V, I D =3.7 A, R G =2.7 Ω V DD =15 V, I D =3.7 A, V GS =0 to 5 V BSR302N 3 of 3sales@zpsemi.com www.zpsemi.com