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Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
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Technical content

Features

  • N-channel
  • Enhancement mode
  • Super Logic level (2.5V rated)
  • Avalanche rated
  • Footprint compatible to SOT23
  • dv /dt rated
  • Pb-free lead plating; RoHS compliant
  • Qualified according to AEC Q101 Maximum ratings, at T j =25 °C, unless otherwise specified PG-SC-59 Type Package Tape and Reel Information Marking Lead Free Packing BSR202N PG-SC-59 L6327 = 3000 pcs. / reel LAs Yes Non dry 1 2 V DS V R DS(on),max V GS =4.5 V mΩ V GS =2.5 V I D 3.8 A Product Summary Parameter Symbol Conditions Unit Continuous drain current I D T A =25 °C 3.8 A T A =70 °C 3.1 Pulsed drain current I D,pulse T A =25 °C 15.2 Avalanche energy, single pulse E AS I D =3.8 A, R GS =25 Ω 30 mJ Reverse diode dv /dt dv /dt I D =3.8 A, V DS =16 V, di /dt =200 A/µs, T j,max =150 °C 6 kV/µs Gate source voltage V GS ±12 V Power dissipation P tot T A =25 °C 0.5 W Operating and storage temperature T j , T stg -55 ... 150 °C ESD Class JESD22-A114-HBM 0 (0V to 250V) Soldering Temperature 260 °C IEC climatic category; DIN IEC 68-1 55/150/56 Value 1 of 3sales@zpsemi.com www.zpsemi.com

Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics Thermal resistance, junction - minimal footprint R thJA - - 250 K/W Electrical characteristics, at T j =25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS = 0 V, I D = 250 µA 20 - - V Gate threshold voltage V GS(th) V DS GS , I D =30 µA 0.7 0.95 1.2 Drain-source leakage current I DSS V DS =20 V, V GS =0 V, T j =25 °C --1 μA V DS =20 V, V GS =0 V, T j =150 °C - - 100 Values Gate-source leakage current I GSS V GS =12 V, V DS =0 V - - 100 nA Drain-source on-state resistance R DS(on) V GS =2.5 V, I D =3 A -2 5 3 3 mΩ V GS =4.5 V, I D =3.8 A -1 7 2 1 Transconductance g fs DS |>2|I D DS(on)max I D =3.8 A 17 - S BSR202N 2 of 3sales@zpsemi.com www.zpsemi.com

Parameter Symbol Conditions Unit min. typ. max. D y namic characteristics Input capacitance C iss - 863 1147 pF Output capacitance C oss - 278 370 Reverse transfer capacitance C rss -4 0 6 0 Turn-on delay time t d(on) - 8.8 - ns Rise time t r - 16.7 - Turn-off delay time t d(off) -1 9- Fall time t f - 3.7 - Gate Charge Characteristics Gate to source charge Q gs - 1.66 2.21 nC Gate to drain charge Q gd - 1.1 1.6 Gate charge total Q g - 5.8 8.8 Gate plateau voltage V plateau - 1.9 - V Values V GS =0 V, V DS =10 V, f =1 MHz V DD =10 V, V GS =4.5 V, I D =3.8 A, R G =6 Ω V DD =10 V, I D =3.8 A, V GS =0 to 4.5 V Reverse Diode Diode continous forward current I S - - 0.8 A Diode pulse current I S,pulse - - 15.2 Diode forward voltage V SD V GS =0 V, I F =3.8 A, T j =25 °C - 0.8 1.1 V Reverse recovery time t rr - 14.3 ns Reverse recovery charge Q rr - 7.6 - nC V R =10 V, I F =3.8 A, di F /dt =100 A/µs T A =25 °C BSR202N 3 of 3sales@zpsemi.com www.zpsemi.com