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N-channel enhancement mode field-effect transistor c c 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: BSH108 in SOT23. 2. Features ■ TrenchMOS™ technology ■ Very fast switching ■ Logic level compatible ■ Subminiature surface mount package. 3. Applications ■ Battery management ■ High speed switch ■ Low power DC to DC converter. 4. Pinning information Table 1: Pinning - SOT23, simplified outline and symbol Pin
Description
Simplified outline Symbol 1 gate (g) SOT23 2 source (s) 3 drain (d) MSB003 Top view s d g MBB076 N-channel enhancement mode field-effect transistorN-channel enhancement mode field-effect transistor 1 of 2sales@zpsemi.com www.zpsemi.com
- Quick reference data 6. Limiting values Table 2: Quick reference data Symbol Parameter Conditions Typ Max Unit V DS drain-source voltage (DC) T j =2 5t o1 5 0°C − 30 V I D drain current (DC) T sp =2 5°C; V GS =5V − 1.9 A P tot total power dissipation T sp =2 5°C − 0.83 W T j junction temperature − 150 °C R DSon drain-source on-state resistance V GS = 10 V; I D = 1 A 77 120 m Ω V GS =5V ; I D = 1 A 102 140 m Ω Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V DS drain-source voltage (DC) T j =2 5t o1 5 0°C − 30 V V DGR drain-gate voltage (DC) T j =2 5t o1 5 0°C; R GS =2 0kΩ− 30 V V GS gate-source voltage (DC) −± 20 V I D drain current (DC) T sp =2 5°C; V GS =5V ;Figure 2and 3 − 1.9 A T sp = 100°C; V GS =5V ;Figure 2 − 1.2 A I DM peak drain current T sp =2 5°C; pulsed; t p ≤ 10 µs;Figure 3 − 7.5 A P tot total power dissipation T sp =2 5°C; Figure 1 − 0.83 W T stg storage temperature −65 +150 °C T j operating junction temperature −65 +150 °C Source-drain diode I S source (diode forward) current (DC) T sp =2 5°C − 0.83 A I SM peak source (diode forward) current T sp =2 5°C; pulsed; t p ≤ 10 µs − 3.3 A BSH108 N-channel enhancement mode field-effect transistorN-channel enhancement mode field-effect transistorN-channel enhancement mode field-effect transistor 2 of 2sales@zpsemi.com www.zpsemi.com