AP2301AGN ZPSEMI | Alldatasheet
Document overview
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- PDF pages: 6
Technical content
P-Channel Enhancement Mode MOSFET Feature -20V/-3A, RDS(ON) = 120mΩ(MAX) @VGS = -4.5V . RDS(ON) = 150mΩ(MAX) @VGS = -2.5V . Super High dense cell design for extremely low RDS(ON) Reliable and Rugged SOT-23 for Surface Mount Package SOT-23
Applications
- Power Management Portable Equipment and Battery Powered Systems. Absolute Maximum Ratings TA=25 Unless Otherwise noted℃ Parameter Symbol Limit Units Drain-Source V oltage VDS -20 V Gate-Source V oltage VGS ±10 V Drain Current-Continuous ID -3 A Electrical Characteristics TA=25 Unless Otherwise noted℃ Parameter Symbol Test Conditions Min Typ. Max Units Off Characteristics Drain to Source Breakdown V oltage BVDSS VGS=0V , ID=-250μA -20 - - V Zero-Gate V oltage Drain Current IDSS VDS=-20V , VGS=0V - - -1 μA Gate Body Leakage Current, Forward IGSSF VGS=10V , VDS=0V - - 100 nA Gate Body Leakage Current, Reverse IGSSR VGS=-10V , VDS=0V - - -100 nA On Characteristics Gate Threshold V oltage VGS(th) VGS= VDS, ID=-250µA -0.4 - -1.0 V Static Drain-source On-Resistance RDS(ON) VGS =-4.5V , ID =-3.0A - -- 120 mΩ VGS =-2.5V , ID =-2.0A - -- 150 mΩ Drain-Source Diode Characteristics and Maximum Ratings Drain-Source Diode Forward V oltage VSD VGS =0V , IS=-1.25A -1.2 V sales@zpsemi.com www.zpsemi.com AP2301AGN 1 of 6
Package Outline Dimensions (UNIT: mm) SOT-23 sales@zpsemi.com www.zpsemi.com 4 of 6 AP2301AGN
sales@zpsemi.com www.zpsemi.com 5 of 6 AP2301AGN
sales@zpsemi.com www.zpsemi.com 6 of 6 AP2301AGN