AN01 SUTEX | Alldatasheet
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Technical content
. SUPERTEX INC O1 vey 773295 0001756 0 C ‘ nafs OS ANO1 @ Supertex inc.
8 Channel Power MOSFET Array
Monolithic N-channel Enchancement Mode
Ordering Information
BV ise! ‘Order Number / Package BV cas loss'* @ Vos =| loss'* @ Vos= | 18-Lead 18-Lead Plastic (min) 100V Max (250V Max Ceramic DIP | Plastic DIP SOW-20* 3600 ‘ANOT16NA ‘ANO116ND [Ceoov] 2000 | 25ma_[— | — | Avotzoa “["anovzona |" — | ANOt20ND. [sev cao | 25ma| [| ANotaone | “ANoiaowa |_|" ANOTSOND_| . [-aoov[-as00 | 25ma | — | — | ANoi4ons | ANo140NA | ANOT40WG_| _ANOL4OND. : _ 28am as 6020 wth 200 mil wide body. : ora cron por chang, measured wih al ight chancel connected in parte. ; Features General Description ' 0 Low drain to source leakage for ANO116 and ANO132 The Supertex ANO1 series of high voltage arrays is designed to : 7 ’ - provide the interface between MOS logicand loads requiring high ia © _200-volt to 400-volt capability Voltages and intermediate currents. Each ciroult consists of eight ; 1 Interfaces directly to CMOS logic channels in a common-source configuration with open drains. 5 © B independent channels This design minimizes the number of package leads needed. : ‘The ANO116 and ANO132 are ideally suited for low leakage/high
1 Low crosstalk betwoen channals impedance measurement, providing excellent accuracy and
© Low power dissipation resolution for Automatic Test Equipment. i 1D Pin compatible with industry standard driver array C) Freedom from secondary breakdown S10] | .
Applications
(High impedance/iow leakage measurements for Bare Board t Testers
1 High voltage piezoelectric transducer drivers :
© High voltage electroluminescent panel drivers : © High voltage electrostatic array drivers i © General multi-channel driver array Hl - Absolute Maximum Ratings Drain-to-Source Voltage BVpsg i Drain-to-Gate Voltage BVogs i Gale-to-Source Voltage £20V : Operating and Storage Temperature 55°C to +150°C ' ‘Soldering Temperature* 300°C ‘Channel-to-Channel Crosstalk 10mVV . “Distance of 1,6 mm from case for 10 seconds. ' 10-3 ec nents = nmemt® Me Ae en nn 5
SUPERTEX INC O1 vel 87739295 OO01759 1 I . : 7 -SRB-25 ot Thermal Characteristics i (continuous)* Power Dissipation 6, cs lon @T, = 25°C cw cw Fewaomc | oma | rma | vom | ws | oo | som] roma _| Ld a i a al “Tp anima ia tnted by maxotedT, Electrical Characteristics (@ 25°C unless otherwise specified) (Notes 1, 2 and 3) [svn [ewan [mn [vp [mor | uae | conti BVpss Drain-to-Source ANO116] 160 Breakdown Voltage ANO120] 200 ANO130| 300 V_ | Ip = 100pA, Vas = OV ANO132| 320 ANO140} 400 Vesun | Gate Tiveshotd vonage «dT 2 | | 8 | V_| Vas =Vos.ip = ima Avesith) _|_Change in Vag(th) with Temperature [_[-36 [| [mvc | Vas = Vos, !p = 1mA Gate Body Leakage ANO120 ANO130 Ves = +20V, Vps = 0 ANO140 . i ‘ANO116 Ves = £20V, Vos = 0 Mowe| | || [nbs Zero Gate Voltage aNov20|__[ | 1 | A | Vas = 0. vps = MaxReting | Drain Current ANO130 1 Ves = 0, Vps = 0.8 Max Rating ANO140 Ta = 125°C ANO116 (Note 3) Vas = 0, Vps = 0.8 Max Rating Ta = 126°C Ves = 0, Vps = 250V (Note 3) Ves = 0, Vos = 0.8 Mex Rating [ Ipion) __|_ ON-State Drain Current | 25] | | _mA_| Vas = 10V, Vos = 26V Static Drain-to-Source ‘ANO120 Ves = 10V, Ip = 10mA ON-State Resistance ANO130 ANO116 ANO132 Ves = 10V, Ip = 10mA . - ANO140 | Change inRDS(ON) with Temperature |__| 0.8| | %/°C | Vag = 10V, Ip = 10mA [ors | Forward ansconductence | 40 8.0] | mu [ip = 10mA Aves = WV [iss | tnputcepsctonce || 8.0 | 7.8 | Vos = 28, Ves = 0 [Goss | Common Source Output Capectance [| 3.0 | 6.0 | fot Mie [crss | Reverse Transfer Copacitance || 0.8 | 1.8 | fy | Risotime | ST Vos = 26V torr | m-OrrOeeyTime | TT On atien ¥ Le atin) _| Been Nesom PY Diode Forward Voltage Drop DP stv [Wes = 01150 = 60ma Naw {: ATD.G paramere 100% ested a 25°C unos ool ated (Pus ot: 900m plo, 2% ul eye) Noto2: AIAG, poate samp tested 3 Noa: Avoag sont por hanna messed wih al ® chanel comecta para! ; i 10-4
SUPERTEX INC 01 Dep) a773e95 ooo17Lo a ANO1 Switching Waveforms and Test Circuit 7-Y3-2 s vi 90% °° 10%. AL INPUT HOFF) r een 7 score t(OFF) tf \\ 1 DUT. 80% 90% I 1 | Lo ___j+ F t Typical Performance Curves Output Characteristics Soturation Characteristics | PRREEECEES “LTT J ee) o Ler o wen ae Ce i. yee a a aa) 2 2 4 | ea 2 aa ad” Zocenena Zn *.. Ao * | 4b oe A) , Gee} , Ad . oo 1 20 a0 408 oa 468 10 Vos (VOLTS) Vos (VOLTS) ‘Transconductance Vs. Drain Current Power Dissipation Vs, Case Temperature 20 20 = Te TEN ERR j 16 a - a SERRE a [NT ceeanic [| ce Ew PRY TT 3 tt ttt yy ty 5 | Tt INALT T ! 5s of ttt TT Tse 2 {| | KN TI i £ ARSE 2 a es ~~ TTT ee] ey a a NN EREEREEEE we » Coe en a eS 02040 e0 e100 os 607810028160 H 1D (MILLIAMPERES) Te Cc) t , : | 105 : i
i SUPERTEX INC O1 vey 6773295 OO017b1 O r . ANO1 T-¥3-250 Maximum Rated Safe Operating Ares ‘Thermal Response Characteristics . ° a “CTO ft CERAMIC (PULSED) a a i fi . CONC Cac ‘CCC ; 3 » LE UIN UE 2 [_Tep=2eomull | Ill Vil i se Bog Lmao TTI TTI i SmTmiaS aml gS [feteawe ITT 5 | NCH € , COCCI a, LETT TIN TT 2“ CoIccrICy icon e 7) See Q LA . Fat anorae at TT 2 2 LY TOPE cis PBT & ° COI » CUT aT 2 | Cobe rococo Vos (VOLTS) tp (SECONDS) BVDssS Variation with Temperature ON-Resistance Vs, Gate-to-Source Voltage soo
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5 st , [pert TT Try jn ceeesszee ° Gann oLLE TTT TTT °c 0 oo On Oe 2028 Vps (VOLTS) Qg (NANOCOULOMBS) Pin Configuration and Schematic | oot X77 fm, olf 7 by, No cf Dp oo = re ; Se af pe) oC] imp in coe lia] 0, oe} [75] 0, oT Se % ole pal oC >, tepview SOW-20 18-pin DIP | i i 1 10-7 i