6970

AON6970 AOSMD | Alldatasheet

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30V Dual Asymmetric N-Channel AlphaMOS General Description Product Summary Q1 Q2 30V 30V I D (at V GS =10V) 58A 85A R DS(ON) (at V GS =10V) <5.4m Ω <1.5mΩ R DS(ON) (at V GS =4.5V) <8.5m Ω <2.3mΩ 100% UIS Tested Application 100% Rg Tested Symbol VDS V

• Latest Trench Power AlphaMOS ( αMOS LV) technology
• Very Low R DS (on) at 4.5V GS
• Low Gate Charge
• High Current Capability
• RoHS and Halogen-Free Compliant
• DC/DC Converters in Computing, Servers, and POL
• Isolated DC/DC Converters in Telecom and Industrial V DS Max Q1 Parameter Gate-Source Voltage Drain-Source Voltage Absolute Maximum Ratings T A=25°C unless otherwise noted Max Q2 Units V V±20 ±2 0 Bottom View PIN1 DFN5X6D Top View Bottom View PIN1 Top View Q2: SRFET TM Soft R ecovery MOS FET : Integrated Schottky Diode G1 D1 D1 D1 G2 S2 S2 S2 PHASE (S1/D2) PHASE D1 S1/D2 S1/D2 VGS IDM IAS EAS VDS Spike VSPIKE TJ, T STG Parameter Symbol Typ Q1 Typ Q2 Max Q1 Max Q2 t ≤ 10s 20 25 25 30 Steady-State 50 56 60 67 Steady-State R θJC 3.3 1.2 4 1.6 V 100ns Avalanche Energy L=0.05mH C 36 36 TC =25°C °C/W °C/W Maximum Junction-to-Ambient A D R θJA Maximum Junction-to-Ambient A °C/W Maximum Junction-to-Case TC =100°C Power Dissipation A PDSM TA=25°C TA=25°C Power Dissipation B IDSM TA=70°C PD TC =100°C Pulsed Drain Current C Continuous Drain Current I D TC =25°C Gate-Source Voltage mJ Avalanche Current C Continuous Drain Current A Units 31 106 A V ±20 ±2 0 A 340 58 85 135 W Thermal Characteristics 5 4.1 3.2 2.6 Junction and Storage Temperature Range -55 to 150 WT A=70°C Rev0 : Sep 2012 www.aosmd.com Page 1 of 10

VDS =30V, V GS =0V 1 TJ=55°C 5 IGSS ±100 nA VGS(th) Gate Threshold Voltage 1.3 1.8 2.3 V 4.4 5.4 TJ=125°C 6.8 8.3 6.7 8.5 m Ω gFS 80 S VSD 0.7 1 V IS 35 A C iss 1171 pF C oss 284 pF C rss 59 pF R g 0.3 0.6 0.9 Ω Q g(10V) 17 23 nC Q g(4.5V) 8 11 nC Q gs 4.7 nC Q gd 2 nC tD(on) 6.5 ns tr 15.5 ns t 17 ns VGS =0V, V DS =15V, f=1MHz SWITCHING PARAMETERS STATIC PARAMETERS Parameter Conditions Drain-Source Breakdown Voltage ID =250 µA, V GS =0V IDSS µA VDS =0V, V GS = ±20V Zero Gate Voltage Drain Current Gate-Body leakage current R DS(ON) Static Drain-Source On-Resistance m Ω VGS =0V, V DS =0V, f=1MHz Forward Transconductance IS=1A,V GS =0V VDS =5V, I D =20A VGS =4.5V, I D =20A VDS =V GS ID =250 µA Reverse Transfer Capacitance VGS =10V, I D =20A Diode Forward Voltage Total Gate Charge V GS =10V, V DS =15V, I D =20A Gate Source Charge Gate Drain Charge Total Gate Charge V GS =10V, V DS =15V, R L=0.75 Ω , R =3 Ω Gate resistance Maximum Body-Diode Continuous Current Input Capacitance Output Capacitance Turn-On DelayTime DYNAMIC PARAMETERS Turn-On Rise Time Turn-Off DelayTime tD(off) 17 ns tf 2.5 ns trr 12.3 ns Q rr 22.5 nC COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE N OT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY AR ISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. IF=20A, dI/dt=500A/ µsBody Diode Reverse Recovery Time Turn-Off Fall Time R GEN =3 Ω Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/ µs Turn-Off DelayTime A. The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25 °C. The Power dissipation P DSM is based on R θJA t ≤ 10s and the maximum allowed junction temperature of 150 °C. The value in any given application depends on the user's specific board design. B. The power dissipation P D is based on T J(MAX) =150 °C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature T J(MAX) =150 °C. Ratings are based on low frequency and duty cycles to keep initial T J =25 °C. D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX) =150 °C. The SOA curve provides a single pulse rating. G. The maximum current rating is limited by package. H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25 °C. Rev0 : Sep 2012 www.aosmd.com Page 2 of 10

VDS =30V, V GS =0V 0.5 TJ=55°C 100 IGSS ±100 nA VGS(th) Gate Threshold Voltage 1.3 1.8 2.3 V 1.2 1.5 TJ=125°C 1.6 2 1.8 2.3 m Ω gFS 100 S VSD 0.46 0.6 V IS 85 A C iss 3973 pF C oss 1100 pF C rss 134 pF R g 0.3 0.65 1 Ω Q g(10V) 60 85 nC Q g(4.5V) 27 38 nC Q gs 12 nC Q gd 10 nC tD(on) 11.5 ns tr 16 ns t 38 ns VDS =5V, I D =20A SWITCHING PARAMETERS Maximum Body-Diode Continuous Current G Input Capacitance Output Capacitance Turn-On DelayTime DYNAMIC PARAMETERS Turn-On Rise Time Total Gate Charge Turn-Off DelayTime VGS =0V, V DS =0V, f=1MHz Gate Source Charge Total Gate Charge Diode Forward Voltage VGS =10V, V DS =15V, R L=0.75 Ω , R =3 Ω Reverse Transfer Capacitance VGS =0V, V DS =15V, f=1MHz Gate Drain Charge Gate resistance IS=1A,V GS =0V VGS =4.5V, I D =20A Zero Gate Voltage Drain Current Gate-Body leakage current R DS(ON) Static Drain-Source On-Resistance STATIC PARAMETERS Parameter Conditions Drain-Source Breakdown Voltage ID =10mA, V GS =0V VGS =10V, V DS =15V, I D =20A m Ω IDSS mA Forward Transconductance VDS =V GS ID =250 µA VDS =0V, V GS =±20V VGS =10V, I D =20A tD(off) 38 ns tf 7 ns trr 20.8 ns Q rr 60 nC COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE N OT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY AR ISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. IF=20A, dI/dt=500A/ µs Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/ µs Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time R GEN =3 Ω A. The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25 °C. The Power dissipation P DSM is based on R θJA t ≤ 10s and the maximum allowed junction temperature of 150 °C. The value in any given application depends on the user's specific board design. B. The power dissipation P D is based on T J(MAX) =150 °C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature T J(MAX) =150 °C. Ratings are based on low frequency and duty cycles to keep initial T J =25 °C. D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX) =150 °C. The SOA curve provides a single pulse rating. G. The maximum current rating is limited by package. H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25 °C. Rev0 : Sep 2012 www.aosmd.com Page 6 of 10

Gate Charge Test Circuit & Waveform VDC DUT Vdd Vgs Vds Vgs RL Rg Vgs Vds 10% 90% Resistive Switching Test Circuit & Waveforms t t rd(on) ton td(off) tf toff Id L Vds BV Unclamped Inductive Switching (UIS) Test Circuit & Waveforms Vds DSS E = 1/2 LI AR AR Vdd Vgs Vgs Rg DUT VDC Vgs Id Vgs I Ig Vgs VDC DUT L Vgs Vds Isd Isd Diode Recovery Test Circuit & Waveforms Vds - Vds + IF AR dI/dt IRM rr Vdd Vdd Q = - Idt trr Rev0 : Sep 2012 www.aosmd.com Page 10 of 10