AON6934A_V01 AOSMD | Alldatasheet
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30V Dual Asymmetric N-Channel AlphaMOS General Description Product Summary Q1 Q2 30V 30V I D (at V GS =10V) 28A 36A R DS(ON) (at V GS =10V) <5.2m Ω <2.9mΩ R DS(ON) (at V GS = 4.5V) <9.5m Ω <4.4mΩ 100% UIS Tested Applications 100% Rg Tested Symbol VDS V
- Latest Trench Power AlphaMOS (αMOS LV) technology
- Very Low RDS(on) at 4.5V GS
- Low Gate Charge
- High Current Capability
- RoHS and Halogen-Free Compliant
- DC/DC Converters in Computing, Servers, and POL
- Isolated DC/DC Converters in Telecom and Industrial V DS Max Q1 Parameter Gate-Source Voltage Drain-Source Voltage Absolute Maximum Ratings T A=25°C unless otherwise noted Max Q2 Units V V±20 ±2 0 Top View Bottom View PIN1 DFN5X6 Top View Bottom View Bottom View PIN1 VGS IDM IAS EAS VDS Spike VSPIKE TJ, T STG Parameter Symbol Typ Q1 Typ Q2 Max Q1 Max Q2 t ≤ 10s 29 24 35 29 Steady-State 56 50 67 60 Steady-State RθJC 3.3 3 4 3.8 *Q1 L=0.1mH, I AS =20A, E AS =20mJ, Starting T J=25°C. *Q2 L=0.1mH, I AS =33A, E AS =54mJ, Starting T J=25°C. V 100ns Avalanche Energy L=0.05mH C 36 36 TC=25°C °C/W °C/W Maximum Junction-to-Ambient A D RθJA Maximum Junction-to-Ambient A °C/W Maximum Junction-to-Case TC=100°C Power Dissipation A PDSM TA=25°C TA=25°C Power Dissipation B IDSM TA=70°C PD TC=100°C Pulsed Drain Current C Continuous Drain Current G ID 32* TC=25°C Gate-Source Voltage mJ Avalanche Current C Continuous Drain Current A Units 46* 26* 53* A V ±20 ±2 0 A 144 28 36 112 W Thermal Characteristics 3.6 4.3 2.3 2.7 Junction and Storage Temperature Range -55 to 150 WT A=70°C Rev 2.0 : April 2014 www.aosmd.com Page 1 of 10
VDS =30V, V GS =0V 1 TJ=55°C 5 IGSS 100 nA VGS(th) Gate Threshold Voltage 1.4 1.8 2.2 V 4.3 5.2 TJ=125°C 6 7.2 7 9.5 m Ω gFS 91 S VSD 0.7 1 V IS 28 A Ciss 1037 pF Coss 441 pF Crss 61 pF Rg 0.7 1.5 2.3 Ω Qg(10V) 15.5 22 nC Qg(4.5V) 6.8 10 nC Qgs 3.0 nC Qgd 3.6 nC Qgs 3.0 nC Qgd 3.6 nC t 5.5 ns VGS =0V, V DS =15V, f=1MHz SWITCHING PARAMETERS STATIC PARAMETERS Parameter Conditions Drain-Source Breakdown Voltage ID=250 µA, V GS =0V IDSS µA VDS =0V, V GS = ±20V Zero Gate Voltage Drain Current Gate-Body leakage current R DS(ON) Static Drain-Source On-Resistance mΩ VGS =0V, V DS =0V, f=1MHz Forward Transconductance IS=1A,V GS =0V VDS =5V, I D=20A VGS =4.5V, I D=20A VDS =V GS ID=250 µA Reverse Transfer Capacitance VGS =10V, I D=20A Diode Forward Voltage Total Gate Charge V GS =10V, V DS =15V, I D=20A Gate Source Charge Gate Drain Charge Total Gate Charge Gate Source Charge V GS =4.5V, V DS =15V, I D=20A Gate Drain Charge Gate resistance Maximum Body-Diode Continuous Current G Input Capacitance Output Capacitance Turn-On DelayTime DYNAMIC PARAMETERS tD(on) 5.5 ns tr 3.3 ns tD(off) 18 ns tf 4.3 ns trr 12.7 ns Qrr 17.2 nC COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. IF=20A, dI/dt=500A/ µsBody Diode Reverse Recovery Time Turn-Off Fall Time VGS =10V, V DS =15V, R L=0.75 Ω , RGEN =3 Ω Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/ µs Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime A. The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25 °C. The Power dissipation P DSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150 °C. The value in any given application depends on the user's specific board design. B. The power dissipation P D is based on T J(MAX) =150 °C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature T J(MAX) =150 °C. Ratings are based on low frequency and duty cycles to keep initial T J =25 °C. D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX) =150 °C. The SOA curve provides a single pulse rating. G. The maximum current rating is limited by package. H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25 °C. Rev 2.0 : April 2014 www.aosmd.com Page 2 of 10
VDS =30V, V GS =0V 1 TJ=55°C 5 IGSS 100 nA VGS(th) Gate Threshold Voltage 1.4 1.8 2.2 V 2.4 2.9 TJ=125°C 3.6 4.4 3.5 4.4 m Ω gFS 105 S VSD 0.7 1 V IS 36 A Ciss 2010 pF Coss 898 pF Crss 124 pF Rg 0.9 1.8 2.7 Ω Qg(10V) 36 49 nC Qg(4.5V) 17 23 nC Qgs 6 nC Qgd 8 nC Qgs 6 nC Qgd 8 nC t 7.5 ns VDS =5V, I D=20A SWITCHING PARAMETERS Maximum Body-Diode Continuous Current G Input Capacitance Output Capacitance Turn-On DelayTime DYNAMIC PARAMETERS Total Gate Charge VGS =0V, V DS =0V, f=1MHz Gate Source Charge Total Gate Charge Diode Forward Voltage Reverse Transfer Capacitance V GS =0V, V DS =15V, f=1MHz Gate Drain Charge Gate resistance IS=1A,V GS =0V Gate Source Charge VGS =4.5V, V DS =15V, I D=20A Gate Drain Charge VGS =4.5V, I D=20A Zero Gate Voltage Drain Current Gate-Body leakage current R DS(ON) Static Drain-Source On-Resistance STATIC PARAMETERS Parameter Conditions Drain-Source Breakdown Voltage ID=10mA, V GS =0V VGS =10V, V DS =15V, I D=20A mΩ IDSS µA Forward Transconductance VDS =V GS ID=250 µA VDS =0V, V GS = ±20V VGS =10V, I D=20A tD(on) 7.5 ns tr 4.0 ns tD(off) 37.0 ns tf 7.5 ns trr 14 ns Qrr 20.3 nC COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. IF=20A, dI/dt=500A/ µs Turn-On DelayTime Turn-On Rise Time Body Diode Reverse Recovery Charge I F=20A, dI/dt=500A/ µs Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time V GS =10V, V DS =15V, R L=0.75 Ω , RGEN =3 Ω A. The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25 °C. The Power dissipation P DSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150 °C. The value in any given application depends on the user's specific board design. B. The power dissipation P D is based on T J(MAX) =150 °C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature T J(MAX) =150 °C. Ratings are based on low frequency and duty cycles to keep initial T J =25 °C. D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX) =150 °C. The SOA curve provides a single pulse rating. G. The maximum current rating is limited by package. H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25 °C. Rev 2.0 : April 2014 www.aosmd.com Page 6 of 10
Gate Charge Test Circuit & Waveform VDC DUT Vdd Vgs Vds Vgs RL Rg Vgs Vds 10% 90% Resistive Switching Test Circuit & Waveforms t t rd(on) ton td(off) tf toff Id L Vds BV Unclamped Inductive Switching (UIS) Test Circuit & Waveforms Vds DSS E = 1/2 LI AR AR Vdd Vgs Vgs Rg DUT VDC Vgs Id Vgs I Ig Vgs VDC DUT L Vgs Vds Isd Isd Diode Recovery Test Circuit & Waveforms Vds - Vds + I F AR dI/dt I RM rr Vdd Vdd Q = - Idt trr Rev 2.0 : April 2014 www.aosmd.com Page 10 of 10