AONS66612 AOSMD | Alldatasheet

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Technical content

General Description Product Summary VDS ID (at VGS=10V) 268A RDS(ON) (at VGS=10V) < 1.65mΩ RDS(ON) (at VGS=6V) < 2.5mΩ Applications 100% UIS Tested 100% Rg Tested Symbol VDS VGS IDM IAS Avalanche energy L=0.3mH C EAS TJ, TSTG Symbol t ≤ 10s Steady-State Steady-State RqJC 60V N-Channel AlphaSGT TM

  • Synchronous Rectification in DC/DC and AC/DC Converters
  • Industrial and Motor Drive applications Orderable Part Number Package Type Form Minimum Order Quantity 60V • Trench Power AlphaSGTTM technology
  • Low RDS(ON)
  • Low Gate Charge
  • Optimized for Fast-Switching Applications
  • RoHS and Halogen-Free Compliant Power Dissipation A TA=25° C TA=70° C TC=25° C TC=100° C TC=25° C Avalanche Current C Continuous Drain Current -55 to 150 Typ PDSM WTA=25° C 6.2 268 A Maximum Junction-to-Ambient A ° C/WRqJA Thermal Characteristics Parameter Max TA=70° C 4.0 Units Junction and Storage Temperature Range 900 IDSM mJ346 AONS66612 DFN 5x6 Tape & Reel 3000 Absolute Maximum Ratings TA=25° C unless otherwise noted ± 20 V Maximum Units Maximum Junction-to-Case ° C/W ° C/WMaximum Junction-to-Ambient A D 0.46 0.6 W ID A48 A Power Dissipation B 83TC=100° C PD 208 Gate-Source Voltage Pulsed Drain Current C 170 Parameter Drain-Source Voltage Continuous Drain Current V G D S Top View S S S G D D D D PIN1 PIN1 DFN5x6 Top View Bottom View Rev.2.1: April 2023 www.aosmd.com Page 1 of 6

VDS=60V, VGS=0V 1 TJ=55° C 5 IGSS ± 100 nA VGS(th) Gate Threshold Voltage 2.3 2.85 3.5 V 1.4 1.65 TJ=125° C 2.25 2.7 2.0 2.5 mΩ gFS 100 S VSD 0.67 1 V IS 120 A Ciss 5300 pF Coss 1500 pF Crss 50 pF Rg 0.4 0.9 1.4 Ω Qg(10V) 78 110 nC Qgs 20 nC Qgd 20 nC Qoss Output Charge VGS=0V, VDS=30V 92 nC tD(on) 18 ns tr 10 ns tD(off) 40 ns tf 13 ns trr 30 ns Qrr 135 nC APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO MAKE CHANGES TO PRODUCT SPECIFICATIONS WITHOUT NOTICE. IT IS THE RESPONSIBILITY OF THE CUSTOMER TO EVALUATE SUITABILITY OF THE PRODUCT FOR THEIR INTENDED APPLICATION. CUSTOMER SHALL COMPLY WITH APPLICABLE LEGAL REQUIREMENTS, INCLUDING ALL APPLICABLE EXPORT CONTROL RULES, REGULATIONS AND LIMITATIONS. AOS' products are provided subject to AOS' terms and conditions of sale which are set forth at: http://www.aosmd.com/terms_and_conditions_of_sale Body Diode Reverse Recovery Charge Body Diode Reverse Recovery Time IF=20A, di/dt=500A/ms Turn-Off DelayTime Turn-Off Fall Time VGS=10V, VDS=30V, RL=1.5W, RGEN=3W IF=20A, di/dt=500A/ms Turn-On Rise Time Gate Source Charge Gate Drain Charge SWITCHING PARAMETERS mΩ Gate-Body leakage current RDS(ON) IS=1A, VGS=0V VDS=VGS, ID=250mA VGS=6V, ID=20A Forward Transconductance VDS=5V, ID=20A Static Drain-Source On-Resistance Turn-On DelayTime Maximum Body-Diode Continuous Current Input Capacitance Diode Forward Voltage DYNAMIC PARAMETERS Reverse Transfer Capacitance VGS=0V, VDS=30V, f=1MHzOutput Capacitance Gate resistance VGS=10V, VDS=30V, ID=20A Total Gate Charge f=1MHz Electrical Characteristics (TJ=25° C unless otherwise noted) STATIC PARAMETERS Parameter Conditions IDSS μAZero Gate Voltage Drain Current Drain-Source Breakdown Voltage ID=250mA, VGS=0V VDS=0V, VGS=± 20V VGS=10V, ID=20A A. The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R qJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature TJ(MAX)=150°C. D. The RqJA is the sum of the thermal impedance from junction to case RqJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300ms pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. G. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. Rev.2.1: April 2023 www.aosmd.com Page 2 of 6

Gate Charge Test Circuit & Waveform VDCDUT VddVgs Vds Vgs RL Rg Vgs Vds 10% 90% Resistive Switching Test Circuit & Waveforms t trd(on) ton td(off) tf toff VddVgs Id Vgs Rg DUT VDC L Vgs Vds Id Vgs BV I Unclamped Inductive Switching (UIS) Test Circuit & Waveforms Ig Vgs VDC DUT L Vds Vgs Vds IsdIsd Diode Recovery Test Circuit & Waveforms Vds - Vds + I F AR DSS E = 1/2 LI dI/dt I RM rr VddVdd Q = - Idt ARAR trr Figure A: Gate Charge Test Circuit & Waveforms Figure B: Resistive Switching Test Circuit & Waveforms Figure C: Unclamped Inductive Switching (UIS) Test Circuit & Waveforms Figure D: Diode Recovery Test Circuit & Waveforms Rev.2.1: April 2023 www.aosmd.com Page 6 of 6