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H igh Diode Semiconductor HD2312 Marking: SOT-23 Plastic-Encapsulate MOSFET N Channel MOSFET D G SOT- 23

  • S12 TrenchFET Power MOSFET Excellent RDS(on) and Low Gate Charge Product Summary S V (BR)DSS R DS(on) MAX I D V 31.8mΩ@4.5V 41.4m Ω@1.8V 35.6mΩ@2.5V DC/DC Converters Load Switching for Portable Applications Parameter Symbol Value Unit Drain-Source Voltage V DS Gate-Source Voltage V GS ±8.0 V Co n t i n u o u s D r a i n C u r r e n t t = 5 s I D Pulsed Drain Current I DM Continuous Source-Drain Diode Current I S 1.04 A Ma x i m u m P o we r D i s s i p a t i o n t = 5 s P D 0. 35 W Thermal Resistance from Junction to Ambient R θJA 357 ℃/W Junction Temperature T J 150 Storage Temperature T stg -50 ~+150

H igh Diode Semiconductor Electrical Characteristics (T A =25 unless otherwise noted)℃ Parameter Symbol Test Condition Min Typ Max Unit Static Drain-source breakdown voltage V (BR) DSS V GS = 0V, I D =250µA 20 V Gate-source leakage I GSS V DS =0V, V GS =±8V ±100 nA Zero gate voltage drain current I DSS V DS =20V, V GS =0V 1.0 µA Gate-source threshold voltage V GS(th) V DS GS , I D =250µA 0.45 0.7 1.0 V V GS =4.5V, I D =5.0A 0.018 0.0318 V GS =2.5V, I D =4.7A 0.023 0.0356 Drain-source on-state resistance a R DS (on) V GS =1.8V, I D =4.3A 0.030 0.0414 Ω Forward tranconductance a g fS V DS =10V, I D =5.0A 6 S Dynamic b Input capacitance C iss 865 Output capacitance C oss 105 Reverse transfer capacitance C rss V DS =10V,V GS =0V,f =1MHz pF Gate resistance R g f =1MHz 0.5 4.8 Ω Turn-on delay Time t d(on) Rise time t r Turn-off Delay time t d(off) Fall yime t f V GEN =5V,V DD =10V, I D =4A,R G =1Ω, R L =2.2Ω ns Drain-source body diode characteristics Forward diode voltage V SD V GS =0V,I S =4A 0.75 1.2 V Notes : a. Pulse Test : pulse width ≤300µs, duty cycle ≤2%. b. These parameters have no way to verify.

H igh Diode Semiconductor Typical Characteristics 0.01 0.1 012345 100 150 25 50 75 100 125 0.0 0.2 0.4 0.6 0.8 1.0 1.2 Pulsed Pulsed T a =100 V SD I S T a =25 SOURCE CURRENT I S (A) SOURCE TO DRAIN VOLTAGE V SD (V) V GS =2V V GS =3V,4V,5V,6V Output Characteristics V GS =1.5V DRAIN CURRENT I D (A) DRAIN TO SOURCE VOLTAGE V DS (V) V GS =1.8V T a =25 Pulsed V GS =4.5V V GS =2.5V T a =25 Pulsed ON-RESISTANCE R DS(ON) DRAIN CURRENT I D (A) I D ——R DS(ON) T a =100 T a =25 ON-RESISTANCE R DS(ON) GATE TO SOURCE VOLTAGE V GS (V) V GS ——R DS(ON) I D =5A V DS =3V Pulsed DRAIN CURRENT I D (A) GATE TO SOURCE VOLTAGE V GS (V) Transfer Characteristics T a =100 T a =25 I D =250uA Threshold Voltage THRESHOLD VOLTAGE V TH (V) JUNCTION TEMPERATURE T j ( )

H igh Diode Semiconductor Package Outline Dimensions SOT-23 Suggested Pad Layout SOT-23

Reel Taping Specifications For Surface Mount Devices-SOT-23 H igh Diode Semiconductor