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H igh Diode Semiconductor HD2310 Marking: SOT-23 Plastic-Encapsulate MOSFET N Channel MOSFET D G SOT- 23

  • S10 Product Summary S DC/DC Converters V (BR)DSS R DS(on) MAX I D V 105mΩ@10V 125m Ω@4.5V High power and current handing capability Lead free product is acquired Surface mount package Battery Switch Parameter Symbol Value Unit Drain-Source Voltage V DS 60 V Gate-Source Voltage V GS ±20 V Continuous Drain Current I D 3 A Pulsed Drain Current (note 1) I DM 10 A Power Dissipation P D 0.35 W Thermal Resistance from Junction to Ambient (note 2) R θJA 357 ℃/W Junction Temperature T J 150 ℃ Storage Temperature T STG -55~+150 ℃

H igh Diode Semiconductor Electrical Characteristics (T A =25 unless otherwise noted)℃ Parameter Symbol Test Condition Min Typ Max Unit STATIC CHARACTERISTICS Drain-source breakdown voltage V (BR)DSS V GS = 0V, I D =250µA 60 V Zero gate voltage drain current I DSS V DS =60V,V GS = 0V 1 µA Gate-body leakage current I GSS V GS =±20V, V DS = 0V ±100 nA Gate threshold voltage (note 3) V GS(th) V DS GS , I D =250µA 0.5 2 V V GS =10V, I D =3A 105 m Ω Drain-source on-resistance (note 3) R DS(on) V GS =4.5V, I D =3A 125 m Ω Forward tranconductance (note 3) g FS V DS =15V, I D =2A 1.4 S Diode forward voltage (note 3) V SD I S =3A, V GS = 0V 1.2 V DYNAMIC CHARACTERISTICS (note 4) Input Capacitance C iss 247 pF Output Capacitance C oss 34 pF Reverse Transfer Capacitance C rss V DS =30V,V GS =0V,f =1MHz 19.5 pF SWITCHING CHARACTERISTICS (note 4) Turn-on delay time t d(on) 6 ns Turn-on rise time t r 15 ns Turn-off delay time t d(off) 15 ns Turn-off fall time t f V GS =10V,V DD =30V, I D =1.5A,R GEN =1Ω 10 ns Total Gate Charge Q g 6 nC Gate-Source Charge Q gs 1 nC Gate-Drain Charge Q gd V DS =30V,V GS =4.5V,I D =3A 1.3 nC Notes : 1. Repetitive rating : Pulse width limited by junction temperature. 2. Surface mounted on FR4 board , t≤10s. 3. Pulse Test : Pulse Width≤300µs, Duty Cycle≤0.5%. 4. Guaranteed by design, not subject to producting.

H igh Diode Semiconductor Typical Characteristics 012345 0246 8 10 100 200 300 400 01234 1E-3 0.01 0.1 25 50 75 100 125 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 2468 10 100 120 140 V GS =5V 3.0V V GS =2.5V DRAIN CURRENT I D (A) DRAIN TO SOURCE VOLTAGE V DS (V) Pulsed V GS =2.0V GATE TO SOURCE VOLTAGE V GS (V) ON-RESISTANCE R DS(ON) (mΩ) I D =3A T a =25 Pulsed V GS ——R DS(ON) DRAIN CURRENT I D (A) GATE TO SOURCE VOLTAGE V GS (V) V DS =5.0V Pulsed T a =100 T a =25 Transfer Characteristics SOURCE CURRENT I S (A) SOURCE TO DRAIN VOLTAGE V SD (V) T a =25 Pulsed V SD I S Output Characteristics THRESHOLD VOLTAGE V TH (V) JUNCTION TEMPERATURE T J ( ) I D =250uA Threshold Voltage VGS=10V DRAIN CURRENT I D (A) ON-RESISTANCE R DS(ON) (mΩ) I D ——R DS(ON) T a =25 Pulsed VGS=4.5V 0.5

H igh Diode Semiconductor Package Outline Dimensions SOT-23 Suggested Pad Layout SOT-23

Reel Taping Specifications For Surface Mount Devices-SOT-23 H igh Diode Semiconductor