HD2301 HDSEMI

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H igh Diode Semiconductor HD2301 Marking: SOT-23 Plastic-Encapsulate MOSFET P Channel MOSFET D G SOT- 23

  • S1 TrenchFET Power MOSFET Excellent RDS(on) and Low Gate Charge Product Summary S Load Switch for Portable Devices DC/DC Converter Parameter Symbol Value Unit Drain Source Voltage V DS V Gate Source Vo ltage V GS V Continuous Drain Current I D 4.0 A Pulsed Drain Current (t=300µ s) I DM A Power Dissipation P D W Thermal Resistance from Junction to Ambient R θJA Junction Temperature T J 150 Storage Temperature T STG 55~ +150 V (BR)DSS R DS(on)MAX I D V m Ω 4.5V 4.0 A m Ω 2.5V

H igh Diode Semiconductor Electrical Characteristics (T A =25 unless otherwise noted)℃ Parameter Symbol Test Condition Min Type Max Unit Static Characteristics Drain source breakdown voltage V (BR)DSS V GS = 0V, I D 250µ A V Zero gate voltage drain current I DSS V DS V,V GS = 0V µ A Gate body leakage current I GSS V GS V, V DS = 0V 100 n A Gate threshold voltage (note 1) V GS(th) V DS GS , I D 250µ A 0.4 V Drain source on resistance (note 1) R DS(on) V GS 4.5V, I D A mΩ V GS 2.5V, I D A 110 Forward tranconductance (note 1) g FS V DS 5V, I D A S Dynamic characteristics (note 2) Input Capacitance C iss V DS V,V GS =0V,f =1MHz 405 pF Output Capacitance Coss pF Reverse Transfer Capacitance Crss pF Gate resistance Rg f =1MHz Ω Total Gate Charge Qg VDS =-10V,VGS =-2.5V,ID=-3A 3.3 nC Gate Source Charge Qgs 0.7 nC Gate Drain Charge Qgd nC Turn on delay time td(on) V DD V,V GEN 4.5 V,I D A R L Ω,R GEN =1Ω ns Turn on rise time tr ns Turn off delay time td(off) ns Turn off fall time t f ns Source Drain Diode characteristics Diode forward current I S T C =25 A Diode pulsed forward current I SM A Diode Forward voltage (note 1) V DS V GS =0V, I S A 1.2 V Notes: 1. Pulse test; pulse width≤300μs, duty cycle≤2%.

H igh Diode Semiconductor Typical Characteristics 0 -1 -2 -3 -4 -10 V GS =-2.5V T a =25 Pulsed V GS =-1.5V V GS =-2V V GS =-3V,-4V,-5V Output Characteristics DRAIN CURRENT ID (A) DRAIN TO SOURCE VOLTAGE VDS (V) -10 V DS =-3V Pulsed T a =25℃ DRAIN CURRENT ID (A) GATE TO SOURCE VOLTAGE VGS (V) Transfer Characteristics T a =100℃ 100 150 V GS =-2.5V V GS =-4.5V T a =25 Pulsed RDS(ON)  ID ON-RESISTANCE RDS(ON) (m) DRAIN CURRENT ID (A) 0 -1 -2 -3 -4 -5 100 200 300 400 500 Pulsed I D =-2.6A T a =100℃ T a =25℃ RDS(ON) - VGS ON-RESISTANCE RDS(ON) (m) GATE TO SOURCE VOLTAGE VGS (V) -0.1 Pulsed T a =100℃ T a =25℃ IS - VSD SOURCE CURRENT IS (A) SOURCE TO DRAIN VOLTAGE VSD (V) 25 50 75 100 125 150 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 ID=-250uA Threshold Voltage THRESHOLD VOLTAGE VTH (V) JUNCTION TEMPERATURE Tj (℃)

H igh Diode Semiconductor Package Outline Dimensions SOT-23 Suggested Pad Layout SOT-23

Reel Taping Specifications For Surface Mount Devices-SOT-23 H igh Diode Semiconductor