HD2305 HDSEMI

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H igh Diode Semiconductor HD2305 Marking SOT-23 Plastic-Encapsulate MOSFET P Channel MOSFET D G SOT- 23

  • S5 TrenchFET Power MOSFET Product Summary S V (BR)DSS R DS(on) MAX I D -12 V 45mΩ@-4.5V -4.1A 90m Ω@-1.8V 60mΩ@-2.5V Load Switch for Portable Devices DC/DC Converter ● Parameter Symbol Value Unit Drain-Source Voltage V DS -12 Gate-Source Voltage V GS V Continuous Drain Current I D -4.1 Continuous Source-Drain Diode Current I S -0.8 A Maximum Power Dissipation P D 0.35 W Thermal Resistance from Junction to Ambient(t≤10s) R θJA 357 ℃/W Junction Temperature T J 150 Storage Temperature T STG -50 ~+150

H igh Diode Semiconductor Electrical Characteristics (T A =25 unless otherwise noted)℃ Parameter Symbol Test Condition Min Typ Max Units Static Drain-source breakdown voltage V (BR)DSS V GS = 0V, I D =-250µA -12 Gate-source threshold voltage V GS(th) V DS GS , I D =-250µA -0.5 -0.9 V Gate-source leakage I GSS V DS =0V, V GS =±8V ±100 nA Zero gate voltage drain current I DSS V DS =-8V, V GS =0V -1 µA V GS =-4.5V, I D =-3.5A 30 45 V GS =-2.5V, I D =-3A 40 6 0 Drain-source on-state resistance a R DS(on) V GS =-1.8V,I D =-2.0A 60 90 mΩ Forward transconductance a g fs V DS =-5V, I D =-4.1A 6 S Dynamic Input capacitance b,c C iss 740 Output capacitance b,c C oss 290 Reverse transfer capacitance b,c C rss V DS =-4V,V GS =0V,f =1MHz 190 pF V DS =-4V,V GS =-4.5V, I D =-4.1A 7.8 15 Total gate charge b Q g 4.5 9 Gate-source charge b Q gs 1.2 Gate-drain charge b Q gd V DS =-4V,V GS =-2.5V, I D =-4.1A 1.6 nC Gate resistance b,c R g f =1MHz 1.4 7 14 Ω Turn-on delay time b,c t d(on) 13 20 Rise time b,c t r 35 53 Turn-off Delay time b,c t d(off) 32 48 Fall time b,c t f V DD =-4V, R L =1.2Ω, I D ≈-3.3A, V GEN =-4.5V,Rg=1Ω 10 20 Turn-on delay time b,c t d(on) 5 10 Rise time b,c t r 11 17 Turn-off delay time b,c t d(off) 22 33 Fall time b,c t f V DD =-4V, R L =1.2Ω, I D ≈-3.3A, V GEN =-8V,Rg=1Ω 16 24 ns Drain-source body diode characteristics Continuous source-drain diode current I S T C =25℃ -1.4 Pulse diode forward current a I SM -10 A Body ciode voltage V SD I F =-3.3A -1.2 V Note : a. Pulse Test ; Pulse Width ≤300µs, Duty Cycle ≤2%. b. Guaranteed by design, not subject to production testing. c. These parameters have no way to verify.

H igh Diode Semiconductor Typical Characteristics -0.1 -10 -0 -1 -2 -3 -4 -12 -16 120 180 -0 -2 -4 -6 100 150 200 25 50 75 100 125 -0.0 -0.2 -0.4 -0.6 -0.8 -1.0 T a =100 Pulsed V SD I S T a =25 Pulsed SOURCE CURRENT I S (A) SOURCE TO DRAIN VOLTAGE V SD (V) V GS = -4.5V -4V -3.5V -3V -2.5V Output Characteristics V GS =-1.5V DRAIN CURRENT I D (A) DRAIN TO SOURCE VOLTAGE V DS (V) VGS=-4.5V VGS=-2.5V T a =25 Pulsed ON-RESISTANCE R DS(ON) Ω DRAIN CURRENT I D (A) I D ——R DS(ON) VGS=-1.8V T a =25 Pulsed I D =-3.3A T a =100 Pulsed ON-RESISTANCE R DS(ON) Ω GATE TO SOURCE VOLTAGE V GS (V) V GS ——R DS(ON) T a =100 Pulsed T a =25 Pulsed V DS =-3V V GS =-2V DRAIN CURRENT I D (A) GATE TO SOURCE VOLTAGE V GS (V) Transfer Characteristics I D =-250uA Threshold Voltage THRESHOLD VOLTAGE V TH (V) AMBIENT TEMPERATURE T a ( )

H igh Diode Semiconductor Package Outline Dimensions SOT-23 Suggested Pad Layout SOT-23

Reel Taping Specifications For Surface Mount Devices-SOT-23 H igh Diode Semiconductor