HD2302 HDSEMI
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H igh Diode Semiconductor HD2302
- Extreme fast switches Marking: SOT-23 Plastic-Encapsulate MOSFET N Channel MOSFET D G SOT- 23
- S2 TrenchFET Power MOSFET Excellent RDS(on) and Low Gate Charge Product Summary S V (BR)DSS R DS(on) MAX I D V 60mΩ@4.5V 2.1A 115m Ω@2.5V Parameter Symbol Value Unit Drain-Source Voltage V DS 2 0 Gate-Source Voltage V GS V Continuous Drain Current I D 2.1 Continuous Source-Drain Current(Diode Conduction) I S 0.6 A Power Dissipation P D 0.4 W Thermal Resistance from Junction to Ambient (t≤5s) R θJA 3 12.5 ℃/W Operating Junction T J 150 Storage Temperature T STG -55 ~+150
H igh Diode Semiconductor Electrical Characteristics (T A =25 unless otherwise noted)℃ Parameter Symbol Test Condition Min Typ Max Units Static Drain-source breakdown voltage V (BR)DSS V GS = 0V, I D =10µA 20 Gate-threshold voltage V GS(th) V DS GS , I D =50µA 0.65 0.95 1.2 V Gate-body leakage I GSS V DS =0V, V GS =±8V ±100 nA Zero gate voltage drain current I DSS V DS =20V, V GS =0V 1 µA V GS =4.5V, I D =3.6A 0.0 35 0.060 Drain-source on-resistance a r DS(on) V GS =2.5V, I D =3.1A 0.0 45 0.115 Ω Forward transconductance a g fs V DS =5V, I D =3.6A 8 S Diode forward voltage V SD I S =0.94A,V GS =0V 0.76 1.2 V Dynamic Total gate charge Q g 4.0 10 Gate-source charge Q gs 0.65 Gate-drain charge Q gd V DS =10V,V GS =4.5V,I D =3.6A 1.5 nC Input capacitance b C iss 300 Output capacitance b C oss 120 Reverse transfer capacitance b C rss V DS =10V,V GS =0V,f=1MHz pF Switching b Turn-on delay time t d(on) 7 15 Rise time t r 55 80 Turn-off delay time t d(off) 16 60 Fall time t f V DD =10V, R L =5.5Ω, I D ≈3.6A, V GEN =4.5V,Rg=6Ω 10 25 ns Notes : a. Pulse Test : Pulse width ≤300µs, duty cycle ≤2%. b. These parameters have no way to verify.
H igh Diode Semiconductor Typical Characteristics 0.1 02468 1 0 100 150 200 250 300 0 5 10 15 20 25 30 100 120 02468 1 0 SOURCE CURRENT I S (A) SOURCE TO DRAIN VOLTAGE V SD (V) T a =25 Pulsed Transfer Characteristics DRAIN CURRENT I D (A) GATE TO SOURCE VOLTAGE V GS (V) T a =25 Pulsed I D =3.6A —— V GS R DS(ON) ON-RESISTANCE R DS(ON) Ω GATE TO SOURCE VOLTAGE V GS (V) I S —— V SD T a =25 Pulsed T a =25 Pulsed T a =25 Pulsed V GS =2.5V V GS =4.5V I D ——R DS(ON) ON-RESISTANCE R DS(ON) Ω DRAIN CURRENT I D (A) V GS =3.5 3.0 2.5V Output Characteristics V GS =2.0V V GS =1.5V DRAIN CURRENT I D (A) DRAIN TO SOURCE VOLTAGE V DS (V)
H igh Diode Semiconductor Package Outline Dimensions SOT-23 Suggested Pad Layout SOT-23
Reel Taping Specifications For Surface Mount Devices-SOT-23 H igh Diode Semiconductor