HD20U60-F-CT HDSEMI

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 4

Technical content

Features

o 20A

  • VRRM
  • High surge current capability

Applications

  • Rectifier Marking HD20U60(F)CT H igh Diode Semiconductor TO- 220 AB ITO- 220 AB CASE PIN 2PIN 1 PIN 3 2 3 1 2 3 HD TO82X2 Schottky Rectifier HD20U60(F)CT 60V Low Vf Item Symbol Unit Test Conditions Repetitive Peak Reverse Voltage V RRM V Average Rectified Output Current I o A 60HZ Half-sine wave, Resistance load, Tc(Fig.1) 20.0 Surge(Non-repetitive)Forward Current I FSM A 60Hz Half-sine wave ,1 cycle , Ta =25℃ 150 Junction Temperature T J ℃ -55~+150 Storage Temperature T STG ℃ -55 ~ +150 Electrical Characteristics (Ta=25℃ Unless otherwise specified） Item Symbol Unit Test Condition Peak Forward Voltage V F V I F =10.0A Peak Reverse Current I RRM1 mA V RM RRM Ta =25℃ 0.3 I RRM2 Ta =125℃ Thermal Resistance(Typical) R θJ-C /W℃ Between junction and case 2.0 Notes: Thermal resistance from junction to case per leg with heat-sink size of 2"×3"×0.25" AL-plate HD20U60(F)CT HD20U60(F)CT 0.49(TYP) 0.54(MAX)

H igh Diode Semiconductor FIG.1: FORWARD CURRENT DERATING CURVE IO(A) Tc( 70 90 110 130 150 IFSM(A) Number of Cycles FIG.2: MAXIMUM NON-REPETITIVE FORWARD URGE CURRENT 8.3ms Single Half Sine Wave JEDEC Method 11 0 1 0 0 175 100 125 150 0.2 0.5 VF(V) IF(A) FIG3:Instantaneous Forward Voltage 1.0 5.0 Ta=25 0.8 0.9 1.00.10 1.1 1.2 FIG.4 TYPICAL REVERSE CHARACTERISTICS Voltage(%) IR(mA) Tj=25 Tj=75 0 20 40 60 80 100 0.001 0.01 0.1 1.0 Tj=125

H igh Diode Semiconductor TO- 220 TO- 220 AB ITO- 220 AB

H igh Diode Semiconductor Part Number Quantity Size（mm） tube 50 pieces 530*33*7 inner box 1000 pieces 558*150*40 outer container 5000 pieces 570*235*170 TO- 220 P acking Information