HD2303 HDSEMI

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H igh Diode Semiconductor HD2303 Marking: SOT-23 Plastic-Encapsulate MOSFET P Channel MOSFET D G SOT- 23

  • S3 TrenchFET Power MOSFET Excellent RDS(on) and Low Gate Charge Product Summary S Load Switch for Portable Devices DC/DC Converter V (BR)DSS R DS(on) MAX I D -30 V 190mΩ@-10V -1.9A 330m Ω@-4.5V Parameter Symbol Value Unit Drain-Source Voltage V DS - 3 0 Gate-Source Voltage V GS ±20 V Continuous Drain Current I D -1.9 Continuous Source-Drain Diode Current I S -0.83 A Maximum Power Dissipation P D 0.35 W Thermal Resistance from Junction to Ambient(t≤5s) R θJA 357 ℃/W Junction Temperature T J 150 Storage Temperature T STG -50 ~+150

H igh Diode Semiconductor Electrical Characteristics (T A =25 unless otherwise noted)℃ Parameter Symbol Test Condition Min Typ Max Units Static Drain-Source Breakdown Voltage V (BR)DSS V GS = 0V, I D =-250µA -30 Gate-Source Threshold Voltage V GS(th) V DS GS , I D =-250µA -1 -1.6 V Gate-Source Leakage I GSS V DS =0V, V GS =±20V ±100 nA Zero Gate Voltage Drain Current I DSS V DS =-30V, V GS =0V -1 µA V GS =-10V, I D Drain-Source On-State Resistance a R DS(on) V GS =-4.5V, I D Ω Forward Transconductance a g fs V DS =-5V, I D =-1.9A 1 S Dynamic b Input Capacitance C iss 155 Output Capacitance C oss Reverse Transfer Capacitance C rss V DS =-15V,V GS =0V,f =1MHz pF V DS =-15V,V GS =-10V,I D =-1.9A 4 8 Total Gate Charge Q g 2 4 Gate-Source Charge Q gs 0.6 Gate-Drain Charge Q gd V DS =-15V,V GS =-4.5V,I D =-1.9A nC Gate Resistance R g f =1MHz 1.7 8.5 17 Ω Turn-On Delay Time t d(on) 4 8 Rise Time t r 11 18 Turn-Off Delay Time t d(off) 11 18 Fall Time t f V DD =-15V, R L =10Ω, I D =-1.5A, V GEN =-10V,Rg=1Ω 8 16 Turn-On Delay Time t d(on) 36 44 Rise Time t r 37 45 Turn-Off Delay Time t d(off) 12 18 Fall Time t f V DD =-15V, R L =10Ω, I D =-1.5A, V GEN =-4.5V,Rg=1Ω 9 14 ns Drain-source Body diode characteristics Continuous Source-Drain Diode Current I S T C =25℃ -1.75 Pulse Diode Forward Current a I SM -10 A Body Diode Voltage V SD I S =-1.5A -0.8 -1.2 V Notes : a. Pulse Test : Pulse Width ≤300µs, Duty Cycle ≤2%. b. Guaranteed by design, not subject to production testing.

H igh Diode Semiconductor Typical Characteristics -0 -1 -2 -3 -4 -10 -12 -14 -16 -18 -20 100 200 300 400 500 600 700 800 -0.01 -0.1 -0 -1 -2 -3 -4 -5 100 110 120 130 140 150 160 25 50 75 100 125 -1.2 -1.3 -1.4 -1.5 -1.6 -1.7 -1.8 -10 -12 V GS =-6V V GS =-5V V GS =-4.5V V GS =-4V V GS =-3.5V V GS =-3V Output Characteristics DRAIN CURRENT I D (A) DRAIN TO SOURCE VOLTAGE V DS (V) T a =25 Pulsed T a =100 Pulsed T a =100 Pulsed T a =25 Pulsed I D =-2A —— V GS R DS(ON) ON-RESISTANCE R DS(ON) (mΩ) GATE TO SOURCE VOLTAGE V GS (V) V SD ——I S SOURCE CURRENT I S (A) SOURCE TO DRAIN VOLTAGE V SD (V) T a =25 Pulsed I D ——R DS(ON) V GS =-10V V GS =-4.5V T a =25 Pulsed DRAIN CURRENT I D (A) ON-RESISTANCE R DS(ON) (mΩ) I D =-250uA Threshold Voltage THRESHOLD VOLTAGE V TH (V) JUNCTION TEMPERATURE T J ( ) V DS =-3.0V Pulsed DRAIN CURRENT I D (A) GATE TO SOURCE VOLTAGE V GS (V) T a =100 T a =25 Transfer Characteristics

H igh Diode Semiconductor Package Outline Dimensions SOT-23 Suggested Pad Layout SOT-23

Reel Taping Specifications For Surface Mount Devices-SOT-23 H igh Diode Semiconductor