HD2307 HDSEMI

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H igh Diode Semiconductor HD2307 Marking: SOT-23 Plastic-Encapsulate MOSFET P Channel MOSFET D G SOT- 23

  • S7 TrenchFET Power MOSFET Excellent RDS(on) and Low Gate Charge Product Summary S Load Switch for Portable Devices DC/DC Converter V (BR)DSS R DS(on) MAX I D -30 V 88mΩ@-10V -2.7A 138mΩ@-4.5V Parameter Symbol Value Unit Drain-Source Voltage V DS - 3 0 Gate-Source Voltage V GS ±20 V Continuous Drain Current a,b I D -2.7 Continuous Source-Drain Current a,b I S -0.91 A Power Dissipation a,b P D 1.1 W Thermal Resistance from Junction to Ambient (t≤5s) R θJA 114 ℃/W Operating Junction Temperature T J 150 Storage Temperature T stg -55 ~+150

H igh Diode Semiconductor Electrical Characteristics (T A =25 unless otherwise noted)℃ Parameter Symbol Test Condition Min Typ Max Unit Static Drain-Source Breakdown Voltage V (BR)DSS V GS = 0V, I D =-250µA -30 Gate-Source Threshold Voltage V GS(th) V DS GS , I D =-250µA -1 V Gate-Source Leakage I GSS V DS =0V, V GS =±20V ±100 nA V DS =-30V, V GS =0V Zero Gate Voltage Drain Current I DSS V DS =-30V, V GS =0V, T J =55℃ -10 µA V GS =-4.5V, I D =-2.5A 0.110 0.138 Drain-Source On-State Resistance c R DS(on) V GS =-10V, I D =-3.5A 0.073 0.088 Ω Forward Transconductance c g fs V DS =-10V, I D =-3.5A 7 S Dynamic d Input Capacitance C iss 340 Output Capacitance C oss Reverse Transfer Capacitance C rss V DS =-15V,V GS =0V,f =1MHz pF Total Gate Charge Q g 4.1 6.2 Gate-Source Charge Q gs 1.3 Gate-Drain Charge Q gd V DS =-15V,V GS =-4.5V, I D =-2.5A 1.8 nC Gate Resistance R g f =1MHz 10 Ω Turn-On Delay Time t d(on) 40 60 Rise Time t r 40 60 Turn-Off Delay Time t d(off) 20 40 Fall Time t f V DD =-15V, R L =15Ω, I D =-1A, V GEN =-4.5V,Rg=1Ω 17 30 ns Drain-source Body diode characteristics Body Diode Voltage V SD I S =-0.75A, ,V GS =0 -0.8 -1.2 V Notes: a. t=5s. b. Surface mounted on 1” ×1” FR4 board. c. Pulse Test : Pulse Width < 300µs, Duty Cycle ≤2%. d. Guaranteed by design, not subject to production testing.

H igh Diode Semiconductor Typical Characteristics -0 -1 -2 -3 -4 -5 -10 -0.01 -0.1 -10 -0 -1 -2 -3 -4 -5 -12 -16 -20 100 150 200 250 300 100 200 300 400 500 T a =25 Pulsed T a =25 Pulsed Transfer Characteristics DRAIN CURRENT I D (A) GATE TO SOURCE VOLTAGE V GS (V) T a =25 Pulsed V SD I S SOURCE CURRENT I S (A) SOURCE TO DRAIN VOLTAGE V SD (V) V GS =-4.5V V GS =-4.0V V GS =-3.5V V GS =-10V,-8V,-6V V GS =-3.0V Output Characteristics DRAIN CURRENT I D (A) DRAIN TO SOURCE VOLTAGE V DS (V) T a =25 Pulsed V GS =-4.5V V GS =-10V ON-RESISTANCE R DS(ON) DRAIN CURRENT I D (A) T a =25 Pulsed I D =-3.5A I D R DS(ON) —— V GS R DS(ON) ON-RESISTANCE R DS(ON) GATE TO SOURCE VOLTAGE V GS (V)

H igh Diode Semiconductor Package Outline Dimensions SOT-23 Suggested Pad Layout SOT-23

Reel Taping Specifications For Surface Mount Devices-SOT-23 H igh Diode Semiconductor