BAT54 HDSEMI
Document overview
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Technical content
Features
Marking: H igh Diode Semiconductor SOT- 23 Electrical Characteristics (Ta=25℃ Unless otherwise specified） SOT-23 Plastic-Encapsulate Diodes MARKING:KL2 MARKING:KL3 MARKING:KL4 MARKING: KL1 BAT54/A/C/S BAT54 BAT54A BAT54C BAT54S Parameter Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage V RRM V RWM V R V Forward Continuous Current I FM 200 mA Non-repetitive Peak Forward Surge Current @ t=8.3ms I FSM 600 mA Repetitive Peak Forward Current @ t≤1s,δ≤0.5 I FRM 300 mA Power Dissipation P D 200 mW Thermal Resistance from Junction to Ambient R ΘJA 500 ℃/W Junction Temperature T j 125 ℃ Storage Temperature T stg -55~+150 ℃ Parameter Symbol Min Typ Max Unit Test conditions Reverse voltage V (BR)
30 V I
R =100μA Forward voltage V F
0.24 V I
=0.1mA
0.32 V I
=1mA
0.40 V I
=10mA
0.50 V I
=30mA
1 V I
=100mA Reverse current I R 2 μA V R =25V Diode capacitance C D 10 pF V R =1V,f=1MHz Reverse recovery time t rr 5 ns IF=IR=10mA Irr=0.1×IR,RL=100Ω Extremely Fast Switching Speed SCHOTTK Y BARRIER DIODE
H igh Diode Semiconductor Typical Characteristics 0 5 10 15 20 25 30 0 25 50 75 100 125 100 150 200 250 0 200 400 600 800 1000 0.01 0.1 100 0 5 10 15 20 25 30 0.01 0.1 100 T a =25 f=1MHz Capacitance Characteristics REVERSE VOLTAGE V R (V) CAPACITANCE BETWEEN TERMINALS C T (pF) Power Derating Curve POWER DISSIPATION P D (mW) AMBIENT TEMPERATURE T a ( ) 200 Forward Characteristics T a =10 o C T a =25 o C FORWARD CURRENT I F (mA) FORWARD VOLTAGE V F (mV) 300 Reverse Characteristics T a =100 o C T a =25 o C REVERSE CURRENT I R (uA) REVERSE VOLTAGE V R (V)
H igh Diode Semiconductor Package Outline Dimensions SOT-23 Suggested Pad Layout SOT-23
Reel Taping Specifications For Surface Mount Devices-SOT-23 H igh Diode Semiconductor