2SK3018 HDSEMI

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H igh Diode Semiconductor Marking: SOT-23 Plastic-Encapsulate MOSFET N Channel MOSFET D G SOT- 23 Product Summary S 2SK3018 V (BR)DSS R DS(on) MAX I D V 8Ω@4V 100mA 13Ω@2.5V Low on-resistance Fast switching speed Low voltage drive makes this device ideal for Easily designed drive circuits Easy to parallel Portable equipment Interfacing , Switching KN Symbol Parameter Value Unit V DS Drain-Source Voltage 30 V V GS Gate-Source Voltage ±20 V I D Continuous Drain Current 0.1 A P D Power Dissipation 0.35 W T J Junction Temperature 150 ℃ T stg Storage Temperature -55~+150 ℃ R θJA Thermal Resistance, Junction-to-Ambient 357 ℃ /W

H igh Diode Semiconductor Electrical Characteristics (T A =25 unless otherwise noted)℃ Parameter Symbol Test Condition Min Typ Max Units Off Characteristics Drain-Source Breakdown Voltage V DS V GS = 0V, I D = 10µA 30 V Zero Gate Voltage Drain Current I DSS V DS =30V,V GS = 0V 0.2 µA Gate –Source leakage current I GSS V GS =±20V, V DS = 0V Gate Threshold Voltage V GS(th) V DS = 3V, I D =100µA 0.8 1.5 V V GS = 4V, I D =10mA 8 Ω Drain-Source On-Resistance R DS(on) V GS =2.5V,I D =1mA 13 Ω Forward Transconductance g FS V DS =3V, I D = 10mA mS Dynamic Characteristics* Input Capacitance C iss 13 pF Output Capacitance C oss 9 pF Reverse Transfer Capacitance C rss V DS =5V,V GS =0V,f =1MHz 4 pF Switching Characteristics* Turn-On Delay Time t d(on) 15 ns Rise Time t r 35 ns Turn-Off Delay Time t d(off) 80 ns Fall Time t f V GS =5V, V DD =5V, I D =10mA, Rg=10Ω, R L =500Ω, 80 ns * These parameters have no way to verify. µA

H igh Diode Semiconductor Typical Characteristics 012345 0.00 0.05 0.10 0.15 0.20 01234 0.1 100 0 5 10 15 20 0.1 100 1 10 100 4.0V T a =25 Pulsed Output Characteristics 3.5V V GS =3.0V V GS =2.5V V GS =2.0V V GS =1.5V DRAIN CURRENT I D (A) DRAIN TO SOURCE VOLTAGE V DS (V) 0.3 V DS =3V T a =25 Pulsed Transfer Characteristics 200 DRAIN CURRENT I D (mA) GATE TO SOURCE VOLTAGE V GS (V) T a =25 Pulsed I D =100mA I D =50mA V GS ——R DS(ON) ON-RESISTANCE R DS(ON) Ω GATE TO SOURCE VOLTAGE V GS (V) 0.3 200 V GS =0V T a =25 Pulsed V SD I S — — 200 SOURCE CURRENT I S (mA) SOURCE TO DRAIN VOLTAGE V SD (V) 303 T a =25 Pulsed I D ——R DS(ON) V GS =2.5V V GS =4V ON-RESISTANCE R DS(ON) Ω DRAIN CURRENT I D (mA)

H igh Diode Semiconductor Package Outline Dimensions SOT-23 Suggested Pad Layout SOT-23

Reel Taping Specifications For Surface Mount Devices-SOT-23 H igh Diode Semiconductor