1N5819W HDSEMI

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H igh Diode Semiconductor SOD1 23 Marking 1N5819W Schottky Rectifier Low Voltage Rectification Low Power Consumption Applications High Efficiency DC/DC Conversion V R 40V I FAV Parameter Symbol Value Unit DC reverse voltage VR 40 V Mean rectifying current IO 1 A Non-repetitive Peak Forward Surge Current @ t=8.3ms IFSM 15 A Power Dissipation PD 0.35 W Thermal Resistance from Junction to Ambient RθJA 285 ℃/W Junction Temperature TJ 125 ℃ Storage Temperature TSTG -55 ~ +150 ℃ Electrical Characteristics (T =25℃ Unless otherwise specified） a Parameter Symbol Test Condition Min Type Max Unit Reverse voltage VBR IR =250µ A 40 50 V Forward voltage VF IF =0.5A 0 0.42 0.50 V IF =1.0A 0 0.48 0.55 V IF =3.0A 0 0.80 0.90 V Reverse current IR VR =40V 5 50 µA Diode capacitance CD VR=4V, f=1MHz 50 pF SL HD SD0.63

H igh Diode Semiconductor Typical Characteristics 0.01 0.1 T a =25℃ FORWARD VOLTAGE VF (V) FORWARD CURRENT IF (A) Forward Characteristics T a =100℃ 0 10 20 30 40 0.1 100 1000 10000 T a =25℃ T a =100℃ REVERSE CURRENT IR (uA) REVERSE VOLTAGE VR (V) Reverse Characteristics 0 5 10 15 20 25 30 120 160 200 240 CAPACITANCE BETWEEN TERMINALS CT (pF) REVERSE VOLTAGE VR (V) Capacitance Characteristics T a =25 f=1MHz 0 25 50 75 100 125 100 150 200 250 300 350 400 POWER DISSIPATION PD (mW) AMBIENT TEMPERATURE Ta (℃) Power Derating Curve

H igh Diode Semiconductor Package Outline Dimensions SOD-1 23 Suggested Pad Layout SOD-1 23

Reel Taping Specifications For Surface Mount Devices-SOD123 H igh Diode Semiconductor 1.50