VKF55-08IO7 IXYS | Alldatasheet

Document overview

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Technical content

Features

 Package with copper base plate  Isolation voltage 3000 V~  Planar passivated chips  Low forward voltage drop  1/4" fast-on power terminals

Applications

 Supplies for DC power equipment  Input rectifiers for PWM inverter  Battery DC power supplies  Field supply for DC motors Advantages  Easy to mount with two screws  Space and weight savings  Improved temperature and power cycling capability  Small and light weight Dimensions in mm (1 mm = 0.0394") Data according to IEC 60747 refer to a single diode/thyristor unless otherwise stated x for resistive load at bridge output. IXYS reserves the right to change limits, test conditions and dimensions. VRSM VRRM Type VDSM VDRM VV 800 800 xxx 55-08io7 1200 1200 xxx 55-12io7 1400 1400 xxx 55-14io7 1600 1600 xxx 55-16io7 xxx = type IdAV = 53 A VRRM = 800-1600 V Symbol Test Conditions Maximum Ratings IdAV x TK = 85°C, module 53 A IdAVM x module 53 A IFRMS , ITRMS per leg 41 A IFSM , ITSM TVJ = 45°C; t = 10 ms (50 Hz), sine 550 A VR = 0 V t = 8.3 ms (60 Hz), sine 600 A TVJ = TVJM t = 10 ms (50 Hz), sine 500 A VR = 0 V t = 8.3 ms (60 Hz), sine 550 A I2t TVJ = 45°C t = 10 ms (50 Hz), sine 1520 A 2s VR = 0 V t = 8.3 ms (60 Hz), sine 1520 A 2s TVJ = TVJM t = 10 ms (50 Hz), sine 1250 A 2s VR = 0 V t = 8.3 ms (60 Hz), sine 1250 A 2s (di/dt)cr TVJ = 125°C repetitive, I T = 50 A 150 A/ /G109s f = 50 Hz, tP = 200 /G109s VD = 2/3 VDRM IG = 0.3 A, non repetitive, I T = 1/2  IdAV 500 A/ /G109s diG /dt = 0.3 A//G109s (dv/dt)cr TVJ = TVJM ; VDR = 2/3 VDRM 1000 V/ /G109s R GK = /G165; method 1 (linear voltage rise) VRGM 10 V PGM TVJ = TVJM tp = 30 /G109s /G16310 W IT = ITAVM tp = 500 /G109s /G1635W tp = 10 ms /G1631W PGAVM 0.5 W TVJ -40...+125 °C TVJM 125 °C Tstg -40...+125 °C VISOL 50/60 Hz, RMS t = 1 min 2500 V~ IISOL /G163 1 mA t = 1 s 3000 V~ M d Mounting torque (M5) 5 ± 15 % Nm (10-32 UNF) 44 ± 15 % lb.in. Weight 110 g Preliminary data VHF 55 VHO 55 VKO 55 VKF 55 VGO 55 Single Phase Rectifier Bridge VHF 55VHO 55 VKF 55 VGO 55 VKO 55

© 2000 IXYS All rights reserved 2 - 2 Symbol Test Conditions Characteristic Values ID , IR TVJ = TVJM ; VR = VRRM ; VD = VDRM /G163 5m A VT IT = 80 A; TVJ = 25°C /G1631.64 V VT0 For power-loss calculations only 0.85 V rT 11 m /G87 VGT VD = 6 V; T VJ = 25°C /G1631.5 V TVJ = -40°C /G1631.6 V IGT VD = 6 V; T VJ = 25°C /G163100 mA TVJ = -40°C /G163200 mA VGD TVJ = TVJM ;V D = 2/3 VDRM /G1630.2 V IGD /G163 5m A IL TVJ = 25°C; tP = 10 /G109s /G163450 mA IG = 0.45 A; diG /dt = 0.45 A//G109s IH TVJ = 25°C; VD = 6 V; RGK = /G165/G163 200 mA tgd TVJ = 25°C; VD = 1/2 VDRM /G163 2 /G109s IG = 0.45 A; diG /dt = 0.45 A//G109s tq TVJ = TVJM ; IT = 20 A, tP = 200 /G109s; di/dt = -10 A//G109s typ. 250 /G109s VR = 100 V; dv/dt = 15 V//G109s; VD = 2/3 VDRM R thJC per thyristor / Diode; DC 0.9 K/W per module 0.18 K/W R thJK per thyristor / Diode; DC 1.1 K/W per module 0.22 K/W d S Creeping distance on surface 16.1 mm dA Creepage distance in air 7.1 mm a Max. allowable acceleration 50 m/s 2 VHF55 VHO55 VKO55 VKF55 VGO55