MIO1200-25E10 IXYS | Alldatasheet

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Technical content

Features

 NPT³ IGBT - Low-loss - Smooth switching waveforms for good EMC  Industry standard package - High power density - AISiC base-plate for high power cycling capacity - AIN substrate for low thermal resistance Typical Applications  AC power converters for - industrial drives - windmills - traction  LASER pulse generator Symbol Conditions Characteristic Values VJ = 25°C, unless otherwise specified) min. typ. max. VCE(sat) ① IC = 1200 A; VGE = 15 V; TVJ = 25°C 2.5 V TVJ = 125°C 3.1 3.4 V VGE(th) IC = 240 mA; VCE = VGE 6 7.5 V ICES VCE = 2500 V; VGE = 0 V; TVJ = 125°C 120 mA IGES VCE = 0 V; VGE = ± 20 V; TVJ = 125°C 500 nA td(on) 365 ns tr 250 ns td(off) 980 ns tf 345 ns Eon 1150 mJ Eoff 1250 mJ Cies 186 nF Coes VCE = 25 V; VGE = 0 V; f = 1 MHz 13.7 nF Cres 3.0 nF Qge IC = 1200 A; VCE = 1250 V; VGE = ± 15 V 12.2 µC RthJC 0.009 K/W ① Collector emitter saturation voltage is given at chip level Inductive load; TVJ = 125°C; VGE = ±15 V; VCC = 1250V; IC = 1200A; RG = 1.5Ω; Lσ = 100nH

© 2004 IXYS All rights reserved2 - 6 MIO 1200-25E10Advanced Technical Information 416 Diode Symbol Conditions Maximum Ratings IF80 TC = 80°C 1200 A IFSM VR = 0 V; TVJ = 125°C; tp = 10 ms; half-sinewave 11000 A Symbol Conditions Characteristic Values min. typ. max. VF ② IF = 1200 A; T VJ = 25°C 1.75 V TVJ = 125°C 1.8 V IRM 1180 A trr 970 ns QRR 1150 µC Erec 990 mJ RthJC 0.017 K/W ② Forward voltage is given at chip level Module Symbol Conditions Maximum Ratings TJM max. junction temperature +150 °C TVJ Operating temperature -40...+125 °C Tstg Storage temperature -40...+125 °C VISOL 50 Hz 5000 V~ Md Mounting torque Base-heatsink, M6 screws 4 - 6 Nm Main terminals, M8 screws 8 - 10 Nm Symbol Conditions Characteristic Values min. typ. max. dA Clearance distance terminal to base 23 mm terminal to terminal 19 mm dS Surface creepage terminal to base 33 mm distance terminal to terminal 33 mm Lσσσσσ Module stray inductance, C to E terminal 10 nH Rterm-chip *) Resistance terminal to chip 0.085 m Ω RthCH per module; λ grease = 1 W/mK 0.006 K/W Weight 1500 g *) V = VCE(sat) + Rterm-chip · IC resp. V = VF + Rterm-chip · IF VCC = 1250 V; IC = 1200 A; VGE = ±15 V; RG = 1.5 Ω; TVJ = 125°C Inductive load; Lσ = 100nH

© 2004 IXYS All rights reserved 3 - 6 416 MIO 1200-25E10Advanced Technical Information 200 400 600 800 1000 1200 1400 1600 1800 2000 2200 2400 012345 V CE [V] IC [A] VGE = 15 V 25 °C 125 °C 200 400 600 800 1000 1200 1400 1600 1800 2000 2200 2400 0123456789 1 0 1 1 1 2 1 3 V GE [V] IC [A] 25 °C 125 °C 200 400 600 800 1000 1200 1400 1600 1800 2000 2200 2400 0123456 V CE [V] IC [A] Tvj = 25°C 17 V 9 V 11 V 15 V 13 V 200 400 600 800 1000 1200 1400 1600 1800 2000 2200 2400 0123456 V CE [V] IC [A] Tvj = 125 °C 15 V 9 V 11 V 13 V 17 V 02468 1 0 1 2 Qg [µC] VGE [V] VCC = 1250 VCC = 1750 IC = 1200 A Tvj = 25 °C 100 1000 0 5 10 15 20 25 30 35 VCE [V] C [nF] VGE = 0 V fOSC = 1 MHz VOSC = 50 mV Cies Coes Cres Fig. 3 Typical onstate characteristics, chip level Fig. 4 Typical transfer characteristics, chip level Fig. 1 Typical output characteristics, chip level Fig. 2 Typical output characteristics, chip level Fig. 5 Typical gate charge characteristics Fig. 6 Typical capacitances vs collector-emitter voltage

© 2004 IXYS All rights reserved4 - 6 MIO 1200-25E10Advanced Technical Information 416 Fig. 12 Typical diode forward characteristics, chip level Fig. 9 Typical switching timesvs collector current Fig. 10 Typical switching timesvs gate resistor Fig. 11 Turn-off safe operating area (RBSOA) Fig. 7 Typical switching energies per pulse vs collector current Fig. 8 Typical switching energies per pulse vs gate resistor 0.01 0.1 0 500 1000 1500 2000 2500 IC [A] td(on), tr, td(off), tf [µs] VCC = 1250 V RG = 1.5 ohm VGE = ±15 V Tvj = 125 °C Lσ = 100 nH td(on) td(off) tf tr 0.1 0 5 10 15 20 RG [ohm] td(on), tr, td(off), tf td(on) td(off) tr tf VCC = 1250 V IC = 1200 A VGE = ±15 V Tvj = 125 °C Lσ = 100 nH 0.5 1.5 2.5 0 500 1000 1500 2000 2500 3000 VCE [V] ICpulse / IC IC, Chip IC, Module VCC ≤ 1800 V 0.0 1.0 2.0 3.0 4.0 5.0 6.0 0 5 10 15 20 R G [ohm] Eon, Eoff [J] Eon Eoff VCC = 1250 V IC = 1200 A VGE = ±15 V Tvj = 125 °C Lσ = 100 nH 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 1000 2000 3000 I C [A] E on , E off [J] E on E off V CC = 1250 V R G = 1.5 ohm V GE = ±15 V T vj = 125 °C L σ = 100 nH 200 400 600 800 1000 1200 1400 1600 1800 2000 2200 2400 00 . 511 . 522 . 5 V F [V] IF [A] 25 °C 125 °C

© 2004 IXYS All rights reserved 5 - 6 416 MIO 1200-25E10Advanced Technical Information Fig. 14 Typical reverse recovery characteristics vs gate resistor Fig. 15 Thermal impedance vs time Fig. 13 Typical reverse recovery characteristics vs forward current )e-(1R = (t)Z n t/-iJCth i τ 100 200 300 400 500 600 700 800 900 1000 1100 1200 0 5 10 15 20 R G [ohm] Erec [mJ] 200 400 600 800 1000 1200 1400 1600 IRM [A], QRR [µC] IRM QRR Erec VCC = 1250 V IC = 1200 A VGE = ±15 V Tvj = 125 °C Lσ = 100 nH 0.0001 0.001 0.01 0.1 0.001 0.01 0.1 1 10 t [s] Zth(j-h) [K/W] IGBT, DIODE Zth(j-c) IGBT Zth(j-c) Diode [A], Q [µC] 200 400 600 800 1000 1200 1400 1600 0 500 1000 1500 2000 2500 I F [A] E rec [mJ], I RM RR Q RR E rec I RM V CC = 1250 V R G = 1.5 ohm V GE = ±15 V T vj = 125 °C L σ = 100 nH i 1 2 3 4 Ri(K/kW) 5.97 1.99 0.619 0.465 IGBT τi(ms) 179 22 2.4 0.54 Ri(K/kW) 11.1 3.36 1.27 1.34 DIODE τi(ms) 189 30 7.4 1.4

© 2004 IXYS All rights reserved6 - 6 MIO 1200-25E10Advanced Technical Information 416 Outline drawing ' ' Note: all dimensions are shown in mm