CS35 IXYS | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 3
Technical content
Features
G Thyristor for line frequencies G International standard package JEDEC TO-208AC G Planar glassivated chip G Long-term stability of blocking currents and voltages
Applications
G Space and weight savings G Simple mounting G Improved temperature and power cycling Dimensions in mm (1 mm = 0.0394") Data according to IEC 60747 IXYS reserves the right to change limits, test conditions and dimensions CS 35 1 2 TO-208AC (TO-65) 1 = Anode, 2 = Cathode, 3 = Gate ¼"-28 UNF-2 A
© 2000 IXYS All rights reserved 2 - 3 Symbol Test Conditions Characteristic Values IR , ID TVJ = TVJM ; VR = VRRM ; VD = VDRM /G163 10 mA VT IT = 150 A; TVJ = 25/G176C /G163 1.5 V VT0 For power-loss calculations only (TVJ = 125/G176C) 0.85 V rT 3.5 m /G87 VGT VD = 6 V; T VJ = 25/G176C /G163 1.5 V TVJ = -40/G176C /G163 1.9 V IGT VD = 6 V; T VJ = 25/G176C /G163 100 mA TVJ = -40/G176C /G163 200 mA VGD TVJ = TVJM ;V D = 2/3 VDRM /G163 0.2 V IGD /G163 1m A IL TVJ = 25/G176C; tP = 30 /G109s /G163 100 mA IG = 0.1 A; diG /dt = 0.1 A//G109s IH TVJ = 25/G176C; VD = 6 V; RGK =/G32/G165 /G163 80 mA tgd TVJ = 25/G176C; VD = 1/2 VDRM /G163 2 /G109s IG = 0.1 A; diG /dt = 0.1 A//G109s tq TVJ = TVJM ; IT = 50 A, tP = 200 /G109s; di/dt = -10 A//G109s typ. 100 /G109s VR = 100 V; dv/dt = 10 V//G109s; VD = 2/3 VDRM R thJC DC current 0.4 K/W R thJH DC current 0.6 K/W dS Creepage distance on surface 1.7 mm dA Strike distance through air 1.7 mm a Max. acceleration, 50 Hz 50 m/s 2 CS 35 01234 100 200 300 400 500 100 101 102 103 104 0.2 0.4 0.6 0.8 0.1 ITVG IG VT A mA V V Fig. 1 Gate trigger range Triggering: A = no; B = possible, C = safe Fig. 2 On-state characteristics TVJ= 25°C TVJ= 125°C 2 4 6 8 IGD : TVJ= 25°C IGD : TVJ=125°C A B IGD : TVJ= -40°C IGD : TVJ= 0°C IGD : TVJ= 25°C 1: PG(AV)= 0.5 W 2: PGM = 5 W; tG = 500 /G109s 3: PGM = 10 W; tG = 30 /G109s C typ. lim.
© 2000 IXYS All rights reserved 3 - 3 0 50 100 150 100 150 23 4 5 6 7 8 911 0 103 104 10-3 10-2 10-1 100 101 200 400 600 800 1000 1200 0 20 40 60 80 100 120 140 100 150 200 50 100 1500 10-3 10-2 10-1 100 101 102 0.0 0.2 0.4 0.6 0.8 I2t ITSM A t t Tc PT W IT(AV)M A Tamb t s ZthJH K/W A A2s s ms °C
6 IT(AV)M
30° 60° 120° 180° DC CS 35 Fig. 3 Surge overload current ITSM : crest value, t: duration Fig. 4 I2t versus time (1-10 ms) Fig. 6 Power dissipation versus on-state current and ambient temperature Fig. 5 Maximum forward current at case temperature Fig. 7 Transient thermal impedance junction to heatsink R thJH for various conduction angles d: dR thJH (K/W) DC 0.6 180/G176 0.65 120/G176 0.677 60/G176 0.725 30/G176 0.775 Constants for ZthJH calculation: iR thi (K/W) t i (s) 1 0.01 0.001 2 0.09 0.013 3 0.30 0.3 4 0.20 0.9 50Hz, 80%VRRM TVJ = 45°C TVJ = 125°C VR = 0 V TVJ = 45°C TVJ = 125°C DC 180° sin 120° 60° 30° DC 180° sin 120° 60° 30° R thJA :