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Technical content

Features

 Silicon Chip on Direct-Copper Bond (DCB) Substrate  Isolated Mounting Surface  4000V~ Electrical Isolation  High Blocking Voltage  High Frequency Operation Advantages  Low Gate Drive Requirement  High Power Density

Applications

 Switch-Mode and Resonant-Mode Power Supplies (Electrically Isolated Tab) Advance Technical Information G = Gate E = Emitter C = Collector G C E Isolated Tab C E G

IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions. MMIX1B15N300C IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537 ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. Reverse Diode Symbol Test Conditions Characteristic Values (TJ = 25°C Unless Otherwise Specified) Min. Typ. Max VF IF = 15A, VGE = 0V, Note 1 5.0 V trr 706 ns IRM 26 A QRM 9.2 μC IF = 15A, VGE = 0V, -diF/dt = 100A/μs VR = 100V, VGE = 0V Symbol Test Conditions Characteristic Values (TJ = 25°C Unless Otherwise Specified) Min. Typ. Max. gfs IC = 15A, VCE = 10V, Note 1 18 30 S Cies 6230 pF Coes VCE = 25V, VGE = 0V, f = 1MHz 260 pF Cres 93 pF Qg(on) 267 nC Qge IC = 15A, VGE = 15V, VCE = 1000V 33 nC Qgc 99 nC td(on) 40 ns tri 23 ns Eon 9.15 mJ td(off) 455 ns tfi 90 ns Eoff 1.40 mJ td(on) 38 ns tri 20 ns Eon 9.15 mJ td(off) 515 ns tfi 150 ns Eoff 2.75 mJ RthJC 0.42 °C/W RthCS 0.05 °C/W Inductive load, TJ = 25°C IC = 15A, VGE = 15V VCE = 1500V, RG = 10 Note 3 Inductive load, TJ = 125°C IC = 15A, VGE = 15V VCE = 1500V, RG = 10 Note 3 Notes: 1. Pulse test, t  300μs, duty cycle, d  2%. 2. Device must be heatsunk for high-temperature leakage current measurements to avoid thermal runaway. 3. Switching times & energy losses may increase for higher V CE(clamp), TJ or RG.

© 2013 IXYS CORPORATION, All Rights Reserved Fig. 1. Output Characteristics @ T J = 25ºC 01234567 VCE - Volts IC - Amperes VGE = 15V 9 V Fig. 2. Extended Output Characteristics @ T J = 25ºC 100 120 140 160 180 200 220 0 5 10 15 20 25 VCE - Volts IC - Amperes VGE = 15V 13 V Fig. 3. Output Characteristics @ T J = 125ºC 012345678 VCE - Volts IC - Amperes VGE = 15V 9 V 7 V Fig. 4. Dependence of V CE(sat) on Junction Temperature 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 -50 -25 0 25 50 75 100 125 150 TJ - Degrees Centigrade VCE(sat) - Normalized VGE = 15V I C = 30A I C = 15A I C = 7.5A Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage 5 6 7 8 9 1 01 11 21 31 41 5 VGE - Volts VCE - Volts I C = 30A TJ = 25ºC 15A 7.5A Fig. 6. Input Admittance VGE - Volts IC - Amperes TJ = 125ºC 25ºC - 40ºC MMIX1B15N300C

IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions. MMIX1B15N300C Fig. 7. Transconductance 0 1 02 03 04 05 0 IC - Amperes g f s - Siemens TJ = - 40ºC 25ºC 125ºC Fig. 11. Reverse-Bias Safe Operating Area 100 120 140 300 600 900 1200 1500 1800 2100 2400 2700 3000 VCE - Volts IC - Amperes TJ = 125ºC RG = 10Ω dv / dt < 10V / ns Fig. 12. Maximum Transient Thermal Impedance 0.001 0.01 0.1 Pulse Width - Seconds Z(th)JC - ºC / W Fig. 8. Gate Charge 0 40 80 120 160 200 240 280 QG - NanoCoulombs VGE - Volts VCE = 1000V I C = 15A I G = 10mA Fig. 10. Capacitance 100 1,000 10,000 0 5 10 15 20 25 30 35 40 VCE - Volts Capacitance - PicoFarads f = 1 MHz Cies Coes Cres Fig. 9. Forward Voltage Drop of Intrinsic Diode 0123456789 VF - Volts IF - Amperes VGE = 0V TJ J = 25ºC 125ºC - - - - - VGE = 15V

© 2013 IXYS CORPORATION, All Rights Reserved Fig. 18. Inductive Turn-off Switching Times vs. Gate Resistance 140 150 160 170 180 190 10 15 20 25 30 35 40 45 50 RG - Ohms t f i - Nanoseconds 200 400 600 800 1000 1200 1400 1600 1800 2000 t d(off) - Nanoseconds t f i t d(off) - - - - TJ = 125ºC, VGE = 15V VCE = 1500V I C = 30A I C = 15A Fig. 15. Inductive Switching Energy Loss vs. Gate Resistance 10 15 20 25 30 35 40 45 50 RG - Ohms Eoff - MilliJoules Eon - MilliJoules Eoff E on - - - - TJ = 125ºC , VGE = 15V VCE = 1500V I C = 15A I C = 30A Fig. 16. Inductive Switching Energy Loss vs. Collector Current 14 16 18 20 22 24 26 28 30 IC - Amperes Eoff - MilliJoules Eon - MilliJoules Eoff E on - - - - TJ = 125ºC , VGE = 15V VCE = 1500V TJ = 25ºC TJ = 125ºC Fig. 17. Inductive Switching Energy Loss vs. Junction Temperature 25 35 45 55 65 75 85 95 105 115 125 TJ - Degrees Centigrade Eoff - MilliJoules Eon - MilliJoules I C = 30A I C = 15A Eoff E on - - - - RG = 10Ω , VGE = 15V VCE = 1500V Fig. 13. Forward-Bias Safe Operating Area @ TC = 25ºC 0.01 0.1 100 1000 1 10 100 1,000 10,000 VCE - Volts IC - Amperes 100µs 1ms 10ms VCE(sat) Limit TJ = 150ºC TC = 25ºC Single Pulse DC 25µs 100ms Fig. 14. Forward-Bias Safe Operating Area @ TC = 75ºC 0.01 0.1 100 1000 1 10 100 1,000 10,000 VCE - Volts IC - Amperes 100µs 10ms 100ms VCE(sat) Limit TJ = 150ºC TC = 75ºC Single Pulse DC 25µs 1ms MMIX1B15N300C

IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions. MMIX1B15N300C IXYS REF: B_15N300C(9T)04-26-13 Fig. 22. Inductive Turn-on Switching Times vs. Collector Current 14 16 18 20 22 24 26 28 30 IC - Amperes t r i - Nanoseconds t d(on) - Nanoseconds t r i t d(on) - - - - RG = 10Ω , VGE = 15V VCE = 1500V TJ = 25ºC TJ = 125ºC Fig. 21. Inductive Turn-on Switching Times vs. Gate Resistance 100 10 15 20 25 30 35 40 45 50 RG - Ohms t r i - Nanoseconds 120 160 200 t d(on) - Nanoseconds t r i t d(on) - - - - TJ = 125ºC, VGE = 15V VCE = 1500V I C = 15A I C = 30A Fig. 19. Inductive Turn-off Switching Times vs. Collector Current 100 120 140 160 180 200 220 240 14 16 18 20 22 24 26 28 30 IC - Amperes t f i - Nanoseconds 380 400 420 440 460 480 500 520 540 560 t d(off) - Nanoseconds t f i t d(off) - - - - RG = 10Ω , VGE = 15V VCE = 1500V TJ = 125ºC TJ = 25ºC Fig. 20. Inductive Turn-off Switching Times vs. Junction Temperature 100 120 140 160 180 200 220 25 35 45 55 65 75 85 95 105 115 125 TJ - Degrees Centigrade t f i - Nanoseconds 380 400 420 440 460 480 500 520 540 t d(off) - Nanoseconds t f i t d(off) - - - - RG = 10Ω , VGE = 15V VCE = 1500V I C = 15A I C = 30A Fig. 23. Inductive Turn-on Switching Times vs. Junction Temperature 25 35 45 55 65 75 85 95 105 115 125 TJ - Degrees Centigrade t r i - Nanoseconds t d(on) - Nanoseconds t r i t d(on) - - - - RG = 10Ω , VGE = 15V VCE = 1500V IC = 30A IC = 15A

© 2013 IXYS CORPORATION, All Rights Reserved PIN: 1 = Gate 5-12 = Emitter 13-24 = Collector MMIX1B15N300C