MMIX1X200N60B3

MMIX1X200N60B3 IXYS | Alldatasheet

Document overview

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Technical content

Features

z Silicon Chip on Direct-Copper Bond (DCB) Substrate z Isolated Mounting Surface z 2500V~ Electrical Isolation z Optimized for Low Conduction and Switching Losses z Avalanche Rated z Short Circuit Capability z Very High Current Capability z Square RBSOA Advantages z High Power Density z Low Gate Drive Requirement

Applications

(Electrically Isolated Tab) Preliminary Technical Information Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 175°C 600 V VCGR TJ = 25°C to 175°C, RGE = 1MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C (Chip Capability) 223 A IC110 TC = 110°C 120 A ICM TC = 25°C, 1ms 1000 A IA TC = 25°C 100 A EAS TC = 25°C 1 J SSOA VGE = 15V, TVJ = 150°C, RG = 1Ω ICM = 400 A (RBSOA) Clamped Inductive Load @VCE ≤ VCES tsc VGE = 15V, VCE = 360V, TJ = 150°C 10 μs (SCSOA) RG = 10Ω, Non Repetitive PC TC = 25°C 625 W TJ -55 ... +175 °C TJM 175 °C Tstg -55 ... +175 °C TL Maximum Lead Temperature for Soldering 300 °C TSOLD 1.6 mm (0.062 in.) from Case for 10 260 °C VISOL 50/60Hz, 1 minute 2500 V~ Weight 8 g

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. MMIX1X200N60B3 IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537 Symbol Test Conditions Characteristic Values (TJ = 25°C Unless Otherwise Specified) Min. Typ. Max. gfs IC = 60A, VCE = 10V, Note 1 27 45 S Cies 9970 pF Coes VCE = 25V, VGE = 0V, f = 1MHz 570 pF Cres 183 pF Qg(on) 315 nC Qge IC = 200A, VGE = 15V, VCE = 0.5 • VCES 98 nC Qgc 130 nC td(on) 48 ns tri 100 ns Eon 2.85 mJ td(off) 160 ns tfi 110 ns Eoff 2.90 4.40 mJ td(on) 46 ns tri 94 ns Eon 4.40 mJ td(off) 180 ns tfi 215 ns Eoff 3.45 mJ RthJC 0.24 °C/W RthCS 0.05 °C/W Inductive load, TJ = 150°C IC = 100A, VGE = 15V VCE = 360V, RG = 1Ω Note 3 Inductive load, TJ = 25°C IC = 100A, VGE = 15V VCE = 360V, RG = 1Ω Note 3 Notes: 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. 2. Part must be heatsunk for high-temp ICES measurement. 3. Switching times & energy losses may increase for higher VCE(Clamp), TJ or RG. PRELIMANARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice.

© 2013 IXYS CORPORATION, All Rights Reserved MMIX1X200N60B3 PIN: 1 = Gate 5-12 = Emitter 13-24 = Collector

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. MMIX1X200N60B3 Fig. 1. Output Characteristics @ T J = 25ºC 100 150 200 VCE - Volts IC - Amperes VGE = 15V 13V 12V 11V 10V Fig. 2. Extended Output Characteristics @ T J = 25ºC 100 150 200 250 300 350 02468 1 0 1 2 1 4 VCE - Volts IC - Amperes VGE = 15V 13V 10V 11V 12V Fig. 3. Output Characteristics @ T J = 150ºC 100 150 200 VCE - Volts IC - Amperes VGE = 15V 13V 12V 10V 11V Fig. 4. Dependence of V CE(sat) on Junction Temperature 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 -50 -25 0 25 50 75 100 125 150 175 TJ - Degrees Centigrade VCE(sat) - Normalized VGE = 15V I C = 100A I C = 150A I C = 200A Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 8 9 10 11 12 13 14 15 VGE - Volts VCE - Volts I C = 200A TJ = 25ºC 100A 150A Fig. 6. Input Admittance 100 120 140 160 180 200 456789 1 0 1 1 VGE - Volts IC - Amperes TJ = 150ºC 25ºC - 40ºC

© 2013 IXYS CORPORATION, All Rights Reserved MMIX1X200N60B3 Fig. 7. Transconductance 100 110 0 20 40 60 80 100 120 140 160 180 200 IC - Amperes g f s - Siemens TJ = - 40ºC, 25ºC, 150ºC Fig. 10. Reverse-Bias Safe Operating Area 100 150 200 250 300 350 400 450 100 150 200 250 300 350 400 450 500 550 600 650 VCE - Volts IC - Amperes TJ = 150ºC RG = 1Ω dv / dt < 10V / ns Fig. 12. Maximum Transient Thermal Impedance 0.0001 0.001 0.01 0.1 Pulse Width - Seconds Z(th)JC - ºC / W Fig. 8. Gate Charge 0 40 80 120 160 200 240 280 320 QG - NanoCoulombs VGE - Volts VCE = 300V I C = 200A I G = 10mA Fig. 9. Capacitance 100 1,000 10,000 100,000 0 5 10 15 20 25 30 35 40 VCE - Volts Capacitance - PicoFarads f = 1 MHz Cies Coes Cres Fig. 11. Forward-Bias Safe Operating Area 0.1 100 1000 1 10 100 1000 VDS - Volts ID - Amperes TJ = 150ºC TC = 25ºC Single Pulse 1ms 10ms VCE(sat) Limit DC 100µs 25µs 100ms

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. MMIX1X200N60B3 Fig. 13. Inductive Switching Energy Loss vs. Gate Resistance 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 123456789 1 0 RG - Ohms Eoff - MilliJoules Eon - MilliJoules Eoff E on - - - - TJ = 150ºC , VGE = 15V VCE = 360V I C = 50A I C = 100A Fig. 16. Inductive Turn-off Switching Times vs. Gate Resistance 160 200 240 280 320 360 123456789 1 0 RG - Ohms t f i - Nanoseconds 100 200 300 400 500 600 t d(off) - Nanoseconds t f i td(off) - - - - TJ = 150ºC, VGE = 15V VCE = 360V I C = 100A I C = 50A Fig. 14. Inductive Switching Energy Loss vs. Collector Current 1.5 2.0 2.5 3.0 3.5 4.0 50 55 60 65 70 75 80 85 90 95 100 IC - Amperes Eoff - MilliJoules Eon - MilliJoules Eoff E on - - - - RG = 1Ω , VGE = 15V VCE = 360V TJ = 150ºC TJ = 25ºC Fig. 15. Inductive Switching Energy Loss vs. Junction Temperature 1.5 2.0 2.5 3.0 3.5 4.0 25 50 75 100 125 150 TJ - Degrees Centigrade Eoff - MilliJoules Eon - MilliJoules Eoff E on - - - - RG = 1Ω , VGE = 15V VCE = 360V I C = 50A I C = 100A Fig. 17. Inductive Turn-off Switching Times vs. Collector Current 100 140 180 220 260 300 340 380 50 55 60 65 70 75 80 85 90 95 100 IC - Amperes t f i - Nanoseconds 120 140 160 180 200 220 240 260 280 t d(off) - Nanoseconds t f i td(off) - - - - RG = 1Ω , VGE = 15V VCE = 360V TJ = 150ºC TJ = 25ºC Fig. 18. Inductive Turn-off Switching Times vs. Junction Temperature 100 150 200 250 300 350 400 450 25 50 75 100 125 150 TJ - Degrees Centigrade t f i - Nanoseconds 120 140 160 180 200 220 240 260 280 t d(off) - Nanoseconds t f i td(off) - - - - RG = 1Ω , VGE = 15V VCE = 360V I C = 100A I C = 50A

© 2013 IXYS CORPORATION, All Rights Reserved MMIX1X200N60B3 IXYS REF: MMIX1X200N60B3(91) 6-13-12 Fig. 20. Inductive Turn-on Switching Times vs. Collector Current 100 120 50 55 60 65 70 75 80 85 90 95 100 IC - Amperes t r i - Nanoseconds t d(on) - Nanoseconds t r i td(on) - - - - RG = 1Ω , VGE = 15V VCE = 360V TJ = 25ºC TJ = 150ºC Fig. 21. Inductive Turn-on Switching Times vs. Junction Temperature 110 130 150 25 50 75 100 125 150 TJ - Degrees Centigrade t r i - Nanoseconds t d(on) - Nanoseconds t r i td(on) - - - - RG = 1Ω , VGE = 15V VCE = 360V I C = 100A I C = 50A Fig. 19. Inductive Turn-on Switching Times vs. Gate Resistance 100 120 140 160 180 123456789 1 0 RG - Ohms t r i - Nanoseconds 105 115 t d(on) - Nanoseconds t r i td(on) - - - - TJ = 150ºC, VGE = 15V VCE = 360V I C = 50A I C = 100A