l104 IXYS | Alldatasheet
Document overview
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Technical content
Features
G Thyristor for line frequencies G International standard package JEDEC TO-64 G Planar glassivated chip G Long-term stability of blocking currents and voltages
Applications
G Space and weight savings G Simple mounting G Improved temperature and power cycling Dimensions in mm (1 mm = 0.0394") Data according to IEC 60747 IXYS reserves the right to change limits, test conditions and dimensions CS 8 1 = Anode, 2 = Cathode, 3 = Gate TO-64 2 M51
© 2000 IXYS All rights reserved 2 - 3 CS 8 10-2 10-1 100 101 10-1 100 101 102 0 2 55 07 5 ITtgdVG V IG t VT A/c109 s mA AV Symbol Test Conditions Characteristic Values IR , ID TVJ = TVJM ; VR = VRRM ; VD = VDRM /G163 3m A VT IT = 33 A; TVJ = 25/G176C /G163 1.6 V VT0 For power-loss calculations only (TVJ = 125/G176C) 1.0 V rT 18 m /G87 VGT VD = 6 V; T VJ = 25/G176C /G163 2.5 V TVJ = -40/G176C /G163 3.5 V IGT VD = 6 V; T VJ = 25/G176C /G163 30 mA TVJ = -40/G176C /G163 50 mA VGD TVJ = TVJM ;V D = 2/3 VDRM /G163 0.2 V IGD /G163 1m A IL TVJ = 25/G176C; tP = 10 /G109s /G163 100 mA IG = 0.09 A; diG /dt = 0.09 A//G109s IH TVJ = 25/G176C; VD = 6 V; RGK =/G32/G165 /G163 80 mA tgd TVJ = 25/G176C; VD = 1/2 VDRM /G163 2 /G109s IG = 0.09 A; diG /dt = 0.09 A//G109s tq TVJ = TVJM ; IT = 16 A, tP = 300 /G109s; di/dt = -20 A//G109s typ. 60 /G109s VR = 100 V; dv/dt = 20 V//G109s; VD = 2/3 VDRM R thJC DC current 1.5 K/W R thJH DC current 2.5 K/W dS Creepage distance on surface 1.55 mm dA Strike distance through air 1.55 mm a Max. acceleration, 50 Hz 50 m/s 2 Accessories: Nut M5 DIN 439/SW8 Lock washer A5 DIN 128 Fig. 1 Gate voltage and gate current Triggering: A = no; B = possible; C = safe Fig. 2 Gate controlled delay time t gd Fig. 3 On-state characteristics B B C B lim. typ. typ. lim. TVJ= 125°C TVJ= 25°C IGD : TVJ= 25°C IGD : TVJ=125°C A IGT : TVJ= 25°C IGT : TVJ= 0°C IGT : TVJ= -40°C
© 2000 IXYS All rights reserved 3 - 3 0 50 100 150 23 4 5 6 7 8 911 0 200 400 600 800 100 1000 10-3 10-2 10-1 100 101 100 150 200 250 300 0 5 10 15 20 25 30 50 100 1500 10-3 10-2 10-1 100 101 102 103 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 IT(AV)M I2tITSM A t t Tc PT W IT(AV)M A Tamb t s ZthJH K/W AA2s s ms °C CS 8 Fig. 7 Power dissipation versus on-state current and ambient temperature Fig. 4 Surge overload current ITSM : crest value, t: duration Fig. 5 I2t versus time (1-10 ms) Fig. 6 Maximum forward current at case temperature 180/G176 sine Fig. 8 Transient thermal impedance junction to heatsink R thJH for various conduction angles d: dR thJH (K/W) DC 2.5 180/G176 2.79 120/G176 2.95 60/G176 3.17 30/G176 3.32 Constants for ZthJH calculation: iR thi (K/W) t i (s) 1 0.252 0.005 2 0.333 0.0225 3 0.5 0.145 4 0.833 0.43 5 0.416 2.75 6 0.166 23 50Hz, 80%VRRM TVJ = 45°C TVJ = 125°C VR = 0 V DC 180° sin 120° 60° 30° d = DC d = 180° d = 120° d = 60° d = 30° TVJ = 45°C TVJ = 125°C R thJA :