FMP36-015P IXYS | Alldatasheet

Document overview

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Technical content

Features

z Silicon chip on Direct-Copper Bond (DCB) substrate - UL recognized package - Isolated mounting surface - 2500V electrical isolation z Avalanche rated z Low QG z Low Drain-to-Tab capacitance z Low package inductance Advantages z Low gate drive requirement z High power density z Low drain to ground capacitance z Fast switching

Applications

z Class AB audio amplifiers z Multi-phase DC to DC converters z Industrial battery chargers z Switching power supplies Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C -150 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ -150 V VGSS Continuous ± 20 V VGSM Transient ± 30 V ID25 TC = 25°C - 22 A IDM TC = 25°C, pulse width limited by T JM - 90 A IA TC = 25°C - 36 A EAS TC = 25°C 1.5 J PD TC = 25°C 125 W Advance Technical Information P - CHANNEL P CH. N CH. VDSS - 150V 150V ID25 - 22A 36A RDS(on) 110mΩ Ω Ω Ω Ω 40mΩΩΩΩΩ trr(typ) 228ns 150nsT2 ISOPLUS i4-PakTM Isolated Tab

IXYS reserves the right to change limits, test conditions, and dimensions. FMP36-015P ISOPLUS i4-PakTM Outline Ref: IXYS CO 0077 R0 IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537 Symbol Test Conditions 2 Characteristic Values (TJ = 25°C unless otherwise specified) Min. Typ. Max. BVDSS VGS = 0V, ID = - 250 μA -150 V VGS(th) VDS = VGS, ID = - 250μA - 2.5 - 4.5 V IGSS VGS = ±20V, VDS = 0V ± 100 nA IDSS VDS = VDSS, VGS = 0V -10 μA TJ = 125°C - 250 μA RDS(on) VGS = -10V, ID = -18A, Note 1 110 m Ω gfs VDS = -10V, ID = -18A, Note 1 11 19 S Ciss 3100 pF Coss VGS = 0V, VDS = - 25 V, f = 1MHz 610 pF Crss 100 pF td(on) Resistive Switching Times 21 ns tr VGS = -10V, VDS = 0.5 z VDSS, ID = -18A 31 ns td(off) RG = 3.3Ω (External) 36 ns tf 15 ns Qg(on) 55 nC Qgs VGS= -10V, VDS = 0.5 z VDSS, ID = -18A 20 nC Qgd 18 nC RthJC 1.0 °C/W RthCS 0.15 °C/W Drain-Source Diode Characteristic Values (TJ = 25°C unless otherwise specified) Symbol Test Conditions 2 Min. Typ. Max. IS VGS = 0V - 22 A ISM Repetitive, pulse width limited by T JM -140 A VSD IF = -18A, VGS = 0 V, Note 1 - 3.3 V trr IF = -18A, di/dt = 100 A/ μs 228 ns QRM VR = - 75V, VGS = 0V 2.0 μ C IRM -17.6 A

© 2008 IXYS CORPORATION, All rights reserved FMP36-015P N - CHANNEL Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 150 V VDGR TJ = 25°C to 150°C; RGS = 1MΩ 150 V VGSS Continuous ± 20 V VGSM Transient ± 30 V ID25 TC = 25°C 36 A IDM TC = 25°C, pulse width limited by T JM 150 A IA TC = 25°C 50 A EAS TC = 25°C 1.0 J PD TC = 25°C 125 W Symbol Test Conditions 2 Characteristic Values (TJ = 25°C unless otherwise specified) Min. Typ. Max. BVDSS VGS = 0V, ID = 250 μA 150 V VGS(th) VDS = VGS, ID = 250μA 3.0 5.5 V IGSS VGS = ±20 V, VDS = 0V ± 100 nA IDSS VDS = VDSS, VGS = 0V 25 μA TJ = 150°C 250 μ A RDS(on) VGS = 10V, ID = 31A, (Note 1) 33 40 m Ω gfs VDS = 10V, ID = 31A, (Note 1) 14 24 S Ciss 2250 pF Coss VGS = 0V, VDS = 25 V, f = 1 MHz 660 pF Crss 185 pF td(on) Resistive Switching Times 27 ns tr VGS = 10V, VDS = 0.5 z VDSS, ID = 31A 38 ns td(off) RG = 10Ω (External) 76 ns tf 35 ns Qg(on) 70 nC Qgs VGS= 10V, VDS = 0.5 z VDSS, ID = 31A 20 nC Qgd 38 nC RthJC 1.0 °C/W RthCS 0.15 °C/W

IXYS reserves the right to change limits, test conditions, and dimensions. FMP36-015P ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated objective result. IXYS reserves the right Source-Drain Diode Characteristic Values TJ = 25°C unless otherwise specified) Symbol Test Conditions 3 Min. Typ. Max. IS VGS = 0V 36 A ISM Repetitive, pulse width limited by T JM 150 A VSD IF = 62A, VGS = 0V, Note 1 1.5 V trr IF = 25A, -di/dt = 100A/ μs 150 ns QRM VR = 100V, VGS = 0V 2.0 μ C Note 1: Pulse test, t ≤ 300μs, duty cycle, d ≤ 2 %.