VHM40-06P1 IXYS | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
Features
- ECO-PAC 2 with DCB Base - Electrical isolation towards the heatsink - Low coupling capacitance to the heatsink for reduced EMI - High power dissipation - High temperature cycling capability of chip on DCB - solderable pins for DCB mounting
- fast CoolMOS power MOSFET - 2nd generation - High blocking capability - Low on resistance - Avalanche rated for unclamped inductive switching (UIS) - Low thermal resistance due to reduced chip thickness
- Enhanced total power density
Applications
- Switched mode power supplies (SMPS)
- Uninterruptible power supplies (UPS)
- Power factor correction (PFC)
- Welding
- Inductive heating 1) CoolMOS is a trademark of Infineon Technologies AG. MOSFET Symbol Conditions Maximum Ratings VDSS TVJ = 25°C to 150°C 600 V VGS ±20 V ID25 TC = 25°C 38 A ID90 TC = 90°C 25 A dv/dt VDS < VDSS ; IF ≤ 50A; diF/dt≤ 200A/µs 6 V/ns TVJ = 150°C EAS ID = 10 A; L = 36 mH; TC = 25°C 1.8 J EAR ID = 20 A; L = 5 µH; TC = 25°C 1 mJ Symbol Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. R DSon VGS = 10 V; ID = ID90 70 m Ω VGSth VDS = 20 V; ID = 3 mA; 3.5 5.5 V IDSS VDS = VDSS ; VGS = 0 V; TVJ = 25°C 25 µA TVJ = 125°C 60 µA IGSS VGS = ±20 V; VDS = 0 V 100 nA Q g 220 nC Q gs 55 nC Q gd 125 nC td(on) 30 ns tr 95 ns td(off) 100 ns tf 10 ns VF (reverse conduction) IF = 20 A; VGS = 0 V 0.9 1.1 V R thJC per MOSFET 0.45 K/W VGS = 10 V; VDS = 350 V; ID = 50 A VGS = 10 V; VDS = 380 V; ID = 25 A; RG = 1.8 Ω Preliminary data sheet ID25 = 38 A VDSS = 600 V R DSon = 70 mΩΩΩΩΩ Pin arangement see outlines Data according to IEC 60747 refer to a single diode or transistor unless otherwise stated L 4 L 9 P 18 R 18 T 18 V 18 F10 K10 K 12 K 13 NTC L 6 X 18
© 2002 IXYS All rights reserved 2 - 2 VHM40-06P1 IXYS reserves the right to change limits, test conditions and dimensions. 238 Module Symbol Conditions Maximum Ratings TVJ -40...+150 °C Tstg -40...+125 °C VISOL IISOL ≤ 1 mA; 50/60 Hz; t = 1 s 3600 V~ M d mounting torque (M4) 1.5 - 2.0 Nm 14 - 18 lb.in. a Max. allowable acceleration 50 m/s 2 Symbol Conditions Characteristic Values min. typ. max. dS Creepage distance on surface (Pin to heatsink) 11.2 mm dA Strike distance in air (Pin to heatsink) 11.2 mm Weight 24 g Reverse diodes (FRED) Symbol Conditions Maximum Ratings IF25 TC = 25°C 18.5 A IF80 TC = 80°C 12.0 A Symbol Conditions Characteristic Values min. typ. max. VF IF = 15 A; TVJ = 25°C 2.58 2.64 V TVJ = 125°C 1.8 V IRM IF = 10 A; diF/dt = 400 A/µs; TVJ = 125°C 7 A trr VR = 300 V; VGE = 0 V 70 ns R thJC 3.5 K/W R thJH with heatsink compound (0.42 K/m.K; 50 µm) 7K / W Temperature Sensor NTC Symbol Conditions Characteristic Values min. typ. max. R 25 T = 25°C 4.75 5.0 5.25 k Ω B 25/50 3375 K Dimensions in mm (1 mm = 0.0394")