VHFD37-16IO1 IXYS | Alldatasheet
Document overview
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Technical content
Features
G Package with DCB ceramic base plate G Isolation voltage 3600 V~ G Planar passivated chips G Blocking voltage up to 1600 V G Low forward voltage drop G Leads suitable for PC board soldering G UL registered E 72873
Applications
G Supply for DC power equipment G DC motor control Advantages G Easy to mount with two screws G Space and weight savings G Improved temperature and power cycling Bridge and Freewheeling Diode Dimensions in mm (1 mm = 0.0394") VHFD 37 Half Controlled Single Phase Rectifier Bridge Including Freewheeling Diode and Field Diodes 1 3 52 6 8 10
© 2000 IXYS All rights reserved 2 - 3 VHFD 37 Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated. x for resistive load IXYS reserves the right to change limits, test conditions and dimensions. Symbol Test Conditions Maximum Ratings IFAV TH = 85/G176C, per Diode 4 A IFAVM per diode 4 A IFRMS per diode 6 A IFSM TVJ = 45/G176C; t = 10 ms (50 Hz), sine 100 A VR = 0 V t = 8.3 ms (60 Hz), sine 110 A TVJ = TVJM t = 10 ms (50 Hz), sine 85 A VR = 0 V t = 8.3 ms (60 Hz), sine 94 A I2t TVJ = 45/G176C t = 10 ms (50 Hz), sine 50 A 2s VR = 0 V t = 8.3 ms (60 Hz), sine 50 A 2s TVJ = TVJM t = 10 ms (50 Hz), sine 36 A 2s VR = 0 V t = 8.3 ms (60 Hz), sine 37 A 2s IR VR = VRRM TVJ = TVJM 1m A TVJ = 25/G176C 0.15 mA VF IF = 21 A; TVJ = 25/G176C 1.83 V VT0 For power-loss calculations only (TVJ = 125°C) 0.9 V rT 50 m /G87 R thJC per diode; DC current 4.4 K/W R thJH per diode; DC current 5.2 K/W Field Diodes Symbol Test Conditions Characteristic Values IR , ID VR = VRRM ; VD = VDRM TVJ = TVJM /G163 5m A TVJ = 25/G176C /G1630.3 mA VT, VF IT, IF = 45 A; TVJ = 25/G176C /G1631.45 V VT0 For power-loss calculations only (TVJ = 125°C) 0.85 V rT 13 m /G87 VGT VD = 6 V; T VJ = 25/G176C /G1631.0 V TVJ = -40/G176C /G1631.2 V IGT VD = 6 V; T VJ = 25/G176C /G16365 mA TVJ = -40/G176C /G16380 mA TVJ = 125/G176C /G16350 mA VGD TVJ = TVJM ;V D = 2/3 VDRM /G1630.2 V IGD TVJ = TVJM ;V D = 2/3 VDRM /G163 5m A IL IG = 0.3 A; tG = 30 /G109s; T VJ = 25/G176C /G163150 mA diG /dt = 0.3 A//G109s; T VJ = -40/G176C /G163200 mA TVJ = 125/G176C /G163100 mA IH TVJ = 25/G176C; VD = 6 V; RGK = /G165/G163 100 mA tgd TVJ = 25/G176C; VD = 1/2 VDRM /G163 2 /G109s IG = 0.3 A; diG /dt = 0.3 A//G109s tq TVJ = 125/G176C, IT = 15 A, tP = 300 /G109s, VR = 100 V typ. 150 /G109s Q r di/dt = -10 A//G109s, dv/dt = 20 V//G109s, VD = 2/3 VDRM 75 /G109C R thJC per thyristor (diode); DC current 1.2 K/W per module 0.3 K/W R thJH per thyristor (diode); DC current 1.55 K/W per module 0.39 K/W Fig. 1 Gate trigger range Fig. 2 Gate controlled delay time tgd 1 10 100 1000 0.1 IG VG mA 1: IGT , TVJ = 125°C 2: IGT , TVJ = 25°C 3: IGT , TVJ = -40°C V 4: PGAV = 0.5 W 5: PGM = 1 W 6: PGM = 10 WIGD , TVJ = 125°C 10 100 1000 100 1000 µs tgd TVJ = 25°C typ. Limit mA IG 750
© 2000 IXYS All rights reserved 3 - 3 VHFD 37 0.001 0.01 0.1 1 100 150 200 250 300 23 4 5 6 7 8 911 0 101 102 103 0 1 02 03 04 0 100 120 0 2 04 06 08 0 1 0 0 1 2 0 1 4 0 0.001 0.01 0.1 1 10 0.0 0.5 1.0 1.5 2.0 I2tIFSM IF A VF t s t ms Ptot W IF(AV)M A Tamb t s ZthJH K/W A s 0 2 04 06 08 0 1 0 0 1 2 0 Id(AV)M TH A V A °C °C VR = 0 V Fig. 3 Forward current versus voltage drop per diode Fig. 4 Surge overload current Fig. 5 I 2t versus time per diode Fig. 6 Power dissipation versus direct output current and ambient temperature Fig. 7 Max. forward current versus heatsink temperature Fig. 8 Transient thermal impedance junction to heatsink TVJ = 125°C TVJ = 45°C typ. TVJ = 125°C TVJ = 25°C max. TVJ = 125°C TVJ = 45°C Constants for ZthJH calculation: iR thi (K/W) t i (s) 1 0.005 0.008 2 0.2 0.05 3 0.875 0.06 4 0.47 0.25 50Hz, 80% VRRM R thHA :