VHF25-08IO7 IXYS | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
Features
Package with DCB ceramic base plate Isolation voltage 3000 V~ Planar passivated chips Low forward voltage drop Leads suitable for PC board soldering
Applications
G Supply for DC power equipment G DC motor control Advantages Easy to mount with two screws Space and weight savings Improved temperature and power cycling capability Small and light weight Data according to IEC 60747 refer to a single diode/thyristor unless otherwise stated x for resistive load at bridge output. IXYS reserves the right to change limits, test conditions and dimensions. IdAV = 32 A VRRM = 600-1200 V Single Phase Rectifier Bridge VRSM VRRM Type VDSM VDRM VV 700 600 VHF 25-06io7 900 800 VHF 25-08io7 1300 1200 VHF 25-12io7 VHF 25 Symbol Test Conditions Maximum Ratings IdAV x TC = 85°C, module 32 A ITAVM /IFAVM TC = 85/G176C; (180/G176 sine ; per thyristor) 16 A ITSM /IFSM TVJ = 45/G176C; t = 10 ms (50 Hz), sine 200 A VR = 0 t = 8.3 ms (60 Hz), sine 210 A TVJ = TVJM t = 10 ms (50 Hz), sine 180 A VR = 0 t = 8.3 ms (60 Hz), sine 190 A I2t TVJ = 45/G176C t = 10 ms (50 Hz), sine 200 A 2s VR = 0 t = 8.3 ms (60 Hz), sine 150 A 2s TVJ = TVJM t = 10 ms (50 Hz), sine 160 A 2s VR = 0 t = 8.3 ms (60 Hz), sine 150 A 2s (di/dt)cr TVJ = TVJM repetitive, IT = 20 A 100 A/ /G109s f =50 Hz, tP =200 /G109s VD = 2/3 VDRM IG = 0.15 A non repetitive, I T = ITAVM 500 A/ /G109s diG /dt = 0.15 A//G109s (dv/dt)cr TVJ = TVJM ;V DR = 2/3 VDRM 500 V/ /G109s R GK = /G165; method 1 (linear voltage rise) VRGM 10 V PGM TVJ = TVJM tp = 30 /G109s /G1635W IT = ITAVM tp = 300 /G109s /G1632.5 W PGAVM 0.5 W TVJ -40...+125 °C TVJM 125 °C Tstg -40...+125 °C VISOL 50/60 Hz, RMS t = 1 min 2500 V~ IISOL /G163 1 mA t = 1 s 3000 V~ M d Mounting torque (M4) 1.5 - 2 Nm 14 - 18 lb.in. Weight typ. 18 g K D H N AG 002 Preliminary data
© 2000 IXYS All rights reserved 2 - 2 Dimensions in mm (1 mm = 0.0394") Symbol Test Conditions Characteristic Values ID , IR TVJ = TVJM ; VR = VRRM ; VD = VDRM /G163 5m A VT IT = 20 A; TVJ = 25/G176C /G163 1.6 V VT0 For power-loss calculations only (TVJ = 125/G176C) 0.85 V rT 27 m /G87 VGT VD = 6 V; T VJ = 25/G176C /G163 1.5 V TVJ = -40/G176C /G163 2.5 V IGT VD = 6 V; T VJ = 25/G176C /G163 25 mA TVJ = -40/G176C /G163 50 mA VGD TVJ = TVJM ;V D = 2/3 VDRM /G163 0.2 V IGD /G163 3m A IL TVJ = 25/G176C; tP = 10 /G109s /G163 75 mA IG = 0.1 A; diG /dt = 0.1 A//G109s IH TVJ = 25/G176C; VD = 6 V; RGK =/G32/G165 /G163 50 mA tgd TVJ = 25/G176C; VD = 1/2 VDRM /G163 2 /G109s IG = 0.1 A; diG /dt = 0.1 A//G109s R thJC per thyristor; DC 1.3 K/W per module 0.22 K/W R thJK per thyristor; DC 1.8 K/W per module 0.3 K/W d S Creeping distance on surface 11.2 mm dA Creepage distance in air 9.5 mm a Max. allowable acceleration 50 m/s 2 VHF 25 002