TA36N30P

IXTQ36N30P IXYS | Alldatasheet

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z International standard packages z Unclamped Inductive Switching (UIS) rated z Low package inductance - easy to drive and to protect Advantages z Easy to mount z Space savings z High power density PolarHTTM DMOS transistors utilize proprietary designs and process. US patent is pending. TO-263 (IXTA) TO-220 (IXTP) TO-3P (IXTQ) G D S (TAB) D (TAB)G S G S (TAB) IXTQ 36N30P IXTA 36N30P IXTP 36N30P V DSS = 300 V ID25 = 36 A RDS(on) = 110 mΩΩΩΩΩ

IXYS reserves the right to change limits, test conditions, and dimensions. IXTA 36N30P IXTP 36N30P IXTQ 36N30P IXYS MOSFETs and IGBTs are covered by one or more4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 6,583,505 of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 6,683,344 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. gfs VDS= 10 V; ID = 0.5 ID25, pulse test 12 22 S Ciss 2250 pF Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 370 pF Crss 90 pF td(on) 24 ns tr VGS = 10 V, VDS = 0.5 VDSS, ID = ID25 30 ns td(off) RG = 10 Ω (External) 97 ns tf 28 ns Qg(on) 70 nC Qgs VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 17 nC Qgd 35 nC RthJC 0.42 K/W RthCK (TO-3P) 0.21 K/W (TO-220) 0.25 K/W Source-Drain Diode Characteristic Values (TJ = 25°C, unless otherwise specified) Symbol Test Conditions Min. typ. Max. IS VGS = 0 V 36 A ISM Repetitive 90 A VSD IF = IS, VGS = 0 V, 1.5 V Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % trr IF = 25 A 250 ns -di/dt = 100 A/µs QRM VR = 100 V 2.0 µC TO-3P (IXTQ) Outline Pins: 1 - Gate 2 - Drain TO-220 (IXTA) Outline Dim. Millimeter Inches Min. Max. Min. Max. A 4.06 4.83 .160 .190 A1 2.03 2.79 .080 .110 b 0.51 0.99 .020 .039 b2 1.14 1.40 .045 .055 c 0.46 0.74 .018 .029 c2 1.14 1.40 .045 .055 D 8.64 9.65 .340 .380 D1 7.11 8.13 .280 .320 E 9.65 10.29 .380 .405 E1 6.86 8.13 .270 .320 e 2.54 BSC .100 BSC L 14.61 15.88 .575 .625 L1 2.29 2.79 .090 .110 L2 1.02 1.40 .040 .055 L3 1.27 1.78 .050 .070 L4 0 0.38 0 .015 R 0.46 0.74 .018 .029 TO-263 (IXTP) Outline

© 2004 IXYS All rights reserved Fig. 2. Extended Output Characteristics @ 25ºC 0 3 6 9 12 15 18 21 24 27 30 VD S - Volts I D - Amperes VGS = 10V Fig. 3. Output Characteristics @ 125ºC 0123456789 1 0 VD S - Volts I D - Amperes VGS = 10V Fig. 1. Output Characteristics @ 25ºC VD S - Volts I D - Amperes VGS = 10V Fig. 4. RDS(on) Normalized to 0.5 I D25 Value vs. Junction Temperature 0.4 0.7 1.3 1.6 1.9 2.2 2.5 2.8 3.1 - 5 0 - 2 50 2 55 07 5 1 0 0 1 2 5 1 5 0 TJ - Degrees Centigrade R D S ( o n ) - Normalized ID = 36A ID = 18A VGS = 10V Fig. 6. Drain Current vs. Case Temperature -50 -25 0 25 50 75 100 125 150 TC - Degrees Centigrade I D - Amperes Fig. 5. RDS(on) Normalized to 0.5 ID25 Value vs. I D 0.6 1.4 1.8 2.2 2.6 3.4 3.8 4.2 0 1 02 03 04 05 06 07 08 09 0 I D - Amperes R D S ( o n ) - Normalized TJ = 125ºC TJ = 25ºC VGS = 10V IXTA 36N30P IXTP 36N30P IXTQ 36N30P

IXYS reserves the right to change limits, test conditions, and dimensions. IXTA 36N30P IXTP 36N30P IXTQ 36N30P IXYS MOSFETs and IGBTs are covered by one or more4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 6,583,505 of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 6,683,344 Fig. 11. Capacitance 100 1000 10000 0 5 10 15 20 25 30 35 40 VD S - Volts Capacitance - picoFarads Ciss Coss Crss f = 1 M Hz Fig. 10. Gate Charge 0 1 02 03 04 05 06 07 0 Q G - nanoCoulombs VG S - Volts VDS = 150V ID = 18A IG = 10mA Fig. 7. Input Admittance VG S - Volts I D - Amperes TJ = 125ºC 25ºC -40ºC Fig. 8. Transconductance 0 1 02 03 04 05 06 07 08 09 0 I D - Am peres g f s - Siemens TJ = -40ºC 25ºC 125ºC Fig. 9. Source Current vs. Source-To-Drain Voltage 100 VS D - Volts I S - Amperes TJ = 125ºC TJ = 25ºC Fig. 12. Forw ard-Bias Safe Operating Area 100 1000 10 100 1000 VD S - Volts I D - Amperes 100µs 1ms DC TJ = 150ºC TC = 25ºCRDS(on) Limit 10ms 25µs

© 2004 IXYS All rights reserved IXTA 36N30P IXTP 36N30P IXTQ 36N30P Fig. 13. M axim um Transient Therm al Resistance 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 1 10 100 1000 Puls e W idth - millis e c on ds R ( t h ) J C - ºC / W