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Document overview

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Technical content

Features

 1200 V SiC Schottky Diode  Surface Mount Package  Zero Reverse Recovery  Zero Forward Recovery  High-Frequency Operation  Temperature-Independent Behavior  Positive Temperature Coefficient for VF

Applications

 MHz Switch Mode Power Supplies  High-Frequency Converters  Resonant Converters  Rectifier Circuits Silicon Carbide Schottky Diode Part Number VRRM (V) IF(AVG) (A) Configuration SS275TA12205 1200 5 Triple Common Anode SS275TC12205 1200 5 Triple Common Cathode SS275TI12205 1200 5 Triple Independent A = Anode C = Cathode Triple Cathode (TC) Triple Independent (TI) Triple Anode (TA)

SS275TA12205, SS275TC12205, SS275TI12205 Fig. 1 Fig. 2 Fig. 3 Fig. 4 Fig. 5 Fig. 6 1E-10 2E-10 3E-10 4E-10 5E-10 6E-10 7E-10 0 200 400 600 800 1000 1200 Capacitance (F) VR (V) Capacitance vs. Reverse Voltage 0.E+00 2.E-08 4.E-08 6.E-08 8.E-08 1.E-07 1.E-07 0 200 400 600 800 1000 1200 Charge (C) VR (V) QC vs. Reverse Voltage 0.000001 0.00001 0.0001 0.001 0.01 0.1 0 500 1000 1500 Leakage Current (µA) VR (V) Leakage Current vs. Reverse Voltage 0.005 0.01 0.015 0.02 0.025 0.03 0.035 -50 0 50 100 Leakage (μA) T emperature (°C) Leakage Current vs. T emperature VR = 1000 V 0.2 0.4 0.6 0.8 1.2 -50 -30 -10 10 30 50 70 90 Normalized Value Temperature (°C) Forward Voltage vs. Temperature IF = 5 A 0 2 4 6 8 IF (A) VF (V) Forward Voltage vs. Current TJ = 175°C TJ = 25°C

SS275TA12205, SS275TC12205, SS275TI12205 DCB – Direct Copper Bond under Nickel plating on an Aluminum Nitride substrate, electrically isolated from any pin. Fig. 7 Package Diagram Top View Bottom View Side View End View © 2015 IXYS RF An IXYS Company 1609 Oakridge Dr., Suite 100 Fort Collins, CO USA 80525 970-493-1901 Fax: 970-232-3025 Email: sales@ixyscolorado.com Web: http://www.ixyscolorado.com