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Document overview

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Technical content

Features

 600 V SiC Schottky Diode  Surface Mount Package  Zero Reverse Recovery  Zero Forward Recovery  High Frequency Operation  Temperature Independent Behavior  Positive Temperature Coefficient for VF

Applications

 MHz Switch Mode Power Supplies  High Frequency Converters  Resonant Converters  Rectifier Circuits Silicon Carbide Schottky Diode Part Number VRRM (V) IF(AVG) (A) Configuration SS150TA60110 600 10 Triple Common Anode SS150TC60110 600 10 Triple Common Cathode SS150TI60110 600 10 Triple Independent A = Anode C = Cathode Triple Cathode (TC) Triple Independent (TI) Triple Anode (TA)

SS150TA60110, SS150TC60110, SS150TI60110 Fig. 1 Fig. 2 Fig. 3 Fig. 4 Fig. 5 Fig. 6 TJ = 25°C TJ = 175°C 0 1 2 3 4 IF (A) VF (V) Forward Voltage vs. Current 0.2 0.4 0.6 0.8 1.2 -50 -30 -10 10 30 50 70 90 Normalized Value Temperature (°C) Forward Voltage vs. Temperature IF = 10 A 1E-10 2E-10 3E-10 4E-10 5E-10 6E-10 7E-10 0 100 200 300 400 500 600 Capacitance (F) VR (V) Capacitance vs. Reverse Voltage 1E-08 2E-08 3E-08 4E-08 5E-08 6E-08 7E-08 8E-08 0 100 200 300 400 500 600 Charge (C) VR (V) QCHARGE vs. Reverse Voltage 0.01 0.1 -50 0 50 100 Leakage Current (μA) T emperature (°C) Leakage Current vs. T emperature VR = 600 V 0.0001 0.001 0.01 0.1 0 200 400 600 Leakage Current (µA) VR (V) Leakage Current vs. Reverse Voltage

SS150TA60110, SS150TC60110, SS150TI60110 DCB – Direct Copper Bond under Nickel plate on an Aluminum Nitride substrate, electrically isolated from any pin. Fig. 7 Package Diagram © 2015 IXYS RF An IXYS Company 1609 Oakridge Dr., Suite 100 Fort Collins, CO USA 80525 970-493-1901 Fax: 970-232-3025 Email: sales@ixyscolorado.com Web: http://www.ixyscolorado.com Side View Top View Bottom View End View