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REV 1.0 F-46-1 N-Channel Enhancement Mode Field Effect Transistor PZP003BYB SOT-523 Halogen-Free & Lead-Free NIKO-SEM ESD Protected Gate G: GATE D: DRAIN S: SOURCE ABSOLUTE MAXIMUM RATINGS (T A = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Gate-Source Voltage V GS ±20 V Continuous Drain Current1 TA = 25 °C ID 110 mA TA = 100 °C 70 Pulsed Drain Current2 I DM 400 Avalanche Current I AS 300 Avalanche Energy L = 0.1mH E AS 0.5 mJ Power Dissipation TA = 25 °C PD 150 mW TA = 100 °C 60 Operating Junction & Storage Temperature Range T j, Tstg -55 to 150 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Ambient RJA 833 °C / W 1Limited by maximum junction temperature. 2Limited by package. ELECTRICAL CHARACTERISTICS (T J = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNITMIN TYP MAX STATIC Drain-Source Breakdown Voltage V (BR)DSS VGS = 0V, ID = 100A 30 V Gate Threshold Voltage V GS(th) VDS = VGS, ID = 100A 0.9 1.3 1.7 Gate-Body Leakage I GSS V DS = 0V, VGS = ±16V ±30 A Zero Gate Voltage Drain Current I DSS VDS = 24V, VGS = 0V 1 VDS = 20V, VGS = 0V, TJ = 125 °C 10 Drain-Source On-State Resistance1 RDS(ON) VGS = 4V, ID = 100mA 6 Ω VGS = 2.5V, ID = 10mA 13 PRODUCT SUMMARY V(BR)DSS R DS(ON) I D 30V 6Ω 110mA Gate Drain Source
REV 1.0 F-46-1 N-Channel Enhancement Mode Field Effect Transistor PZP003BYB SOT-523 Halogen-Free & Lead-Free NIKO-SEM Forward Transconductance1 g fs V DS = 5V, ID = 0.1A 0.3 S DYNAMIC Input Capacitance C iss VGS = 0V, VDS = 15V, f = 1MHz pFOutput Capacitance C oss 11 Reverse Transfer Capacitance C rss 6 Turn-On Delay Time2 t d(on) VDD = 15V, ID 100mA, VGS = 4V, RGEN = 6Ω nS Rise Time2 t r 45 Turn-Off Delay Time2 t d(off) 86 Fall Time2 t f 88 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Continuous Current I S 110 mA Forward Voltage1 V SD I F =0.5A, VGS = 0V 1.3 V 1Pulse test : Pulse Width 300 sec, Duty Cycle 2％. 2Independent of operating temperature.
REV 1.0 F-46-1 N-Channel Enhancement Mode Field Effect Transistor PZP003BYB SOT-523 Halogen-Free & Lead-Free NIKO-SEM ID=100mA ID=10mA 0.6 1.2 1.8 2.4 234567 1.0E+01 1.0E+00 1.0E-01 1.0E-02 1.0E-03 1.0E-04 1.0E+02 1.4 1.0E-05 TJ =25°C TJ =150°C Source-Drain Diode Forward Voltage Ciss Coss Crss 0.00E+00 5.00E+00 1.00E+01 1.50E+01 2.00E+01 2.50E+01 3.00E+01 3.50E+01 4.00E+01 4.50E+01 5.00E+01 02468 1 0 1 2 1 4 VGS =2V VGS =3V VGS =4V VGS =5V VGS =6V 01234 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 -25 0 25 50 75 100 125 150 RDS(ON) ╳ VGS=4V ID=100m A RDS(ON) ╳ RDS(ON) ╳ RDS(ON) ╳ RDS(ON) ╳ RDS(ON) ╳ RDS(ON) ╳ RDS(ON) ╳ RDS(ON) ╳ ON-Resistance VS Gate-To-Source Voltage T J =125°C T J =-20°C T J =25°C1 Output Characteristics ID, Drain-To-Source Current(A) Transfer Characteristics ID, Drain-To-Source Current(A) VGS, Gate-To-Source Voltage(V) VDS, Drain-To-Source Voltage(V) On-Resistance VS Temperature RDS(ON)ON-Resistance(OHM) TJ , Junction Temperature(˚C) Capacitance Characteristic C , Capacitance(pF) VDS, Drain-To-Source Voltage(V) IS , Source Current(A) RDS(ON)ON-Resistance(Ω)
REV 1.0 F-46-1 N-Channel Enhancement Mode Field Effect Transistor PZP003BYB SOT-523 Halogen-Free & Lead-Free NIKO-SEM 0.0001 0.001 0.01 0.1 1 10 100 SINGLE PULSE RθJA= 833°C/W TA=25°C DC 10m s 100m s 10s 1m s 0.001 0.01 0.1 0.1 1 10 100 NOTE : 1.V GS= 4V 2.TA=25°C 3.RθJA =833°C/W 4.Single Pulse Operation in This Area is Lim ited by VSD, Source-To-Drain Voltage(V) Single Pulse Maximum Power Dissipation ID , Drain Current(A) Power(W) Single Pulse Time(s) VDS, Drain-To-Source Voltage(V) Transient Thermal Response Curve r(t) , Normalized Effective Transient Thermal Resistance T1 , Square Wave Pulse Duration[sec] Safe Operating Area VGS, Gate-To-Source Voltage(V)
REV 1.0 F-46-1 N-Channel Enhancement Mode Field Effect Transistor PZP003BYB SOT-523 Halogen-Free & Lead-Free NIKO-SEM
REV 1.0 F-46-1 N-Channel Enhancement Mode Field Effect Transistor PZP003BYB SOT-523 Halogen-Free & Lead-Free NIKO-SEM
REV 1.0 F-46-1 N-Channel Enhancement Mode Field Effect Transistor PZP003BYB SOT-523 Halogen-Free & Lead-Free NIKO-SEM
REV 1.0 F-46-1 N-Channel Enhancement Mode Field Effect Transistor PZP003BYB SOT-523 Halogen-Free & Lead-Free NIKO-SEM