DATASHEET SEARCH SITE | WWW.ALLDATASHEET.COM
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 4
Technical content
Features
- Pb−Free, Halogen Free and RoHS compliant.
- Low RDS(on) to Minimize Conduction Losses.
- Ohmic Region Good RDS(on) Ratio.
- Optimized Gate Charge to Minimize Switching Losses.
- Products Integrated ESD diode with ESD Protected up to 2KV.
Applications
- Protection Circuits Applications.
- Logic/Load Switch Circuits Applications. ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Gate-Source Voltage V GS ±12 V Continuous Drain Current4 TA = 25 °C ID 10.9 A TA = 70 °C 8.7 Pulsed Drain Current1 I DM 28 Avalanche Current I AS 11.4 Avalanche Energy L = 0.1mH E AS 6.5 mJ Power Dissipation3 TA = 25 °C PD 4.1 W TA = 70 °C 2.6 Operating Junction & Storage Temperature Range T j, Tstg -55 to 150 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Ambient2 t ≦10s RJA 30 °C / W Junction-to-Ambient2 Steady-State RJA 54 Junction-to-Case RJc 13 1Pulse width limited by maximum junction temperature. 2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. 3The Power dissipation is based on RJA t ≦10s value. 4Package limitation current is 5.5A. 1. GATE 2. DRAIN 3. SOURCE PRODUCT SUMMARY V(BR)DSS R DS(ON) I D 20V 20mΩ 10.9A ESD Protected Gate
REV1.0 G-53-5 NIKO-SEM N-Channel Enhancement Mode Field Effect Transistor PC5M0EA SOT-89 Halogen-Free & Lead-Free ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNITMIN TYP MAX STATIC Drain-Source Breakdown Voltage V (BR)DSS VGS = 0V, ID = 250A 20 V Gate Threshold Voltage V GS(th) VDS = VGS, ID = 250A 0.5 0.96 1.5 Gate-Body Leakage I GSS V DS = 0V, VGS = ±8V ±30 uA Zero Gate Voltage Drain Current I DSS VDS = 16V, VGS = 0V 1 VDS = 10V, VGS = 0V, TJ = 55 °C 10 Drain-Source On-State Resistance1 RDS(ON) VGS = 2.5V, ID = 3A 30 40 mΩVGS = 4.5V, ID = 3A 20 25 VGS = 10V, ID = 4A 16 20 Forward Transconductance1 g fs V DS = 5V, ID = 4A 2 S DYNAMIC Input Capacitance C iss VGS = 0V, VDS = 10V, f = 1MHz 397 pFOutput Capacitance C oss 89 Reverse Transfer Capacitance C rss 73 Gate Resistance Rg V GS = 0V, VDS = 0V, f = 1MHz 1.7 Ω Total Gate Charge2 Q g(VGS=10V) VDS = 10V, ID = 4A 11.2 nC Qg(VGS=4.5V) 5.8 Gate-Source Charge2 Q gs 0.7 Gate-Drain Charge2 Q gd 2.9 Turn-On Delay Time2 t d(on) VDS = 10V ID 4A, VGS = 10V, RGS = 6Ω nS Rise Time2 t r 33 Turn-Off Delay Time2 t d(off) 26 Fall Time2 t f 12 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Continuous Current3 I S 3.1 A Forward Voltage1 V SD I F = 4A, VGS = 0V 1.3 V Reverse Recovery Time t rr IF = 4A, dI/dt = 100 A/μs 8.4 nS Reverse Recovery Charge Q rr 1.2 nC 1Pulse test : Pulse Width 300 sec, Duty Cycle 2％. 2Independent of operating temperature. 3Package limitation current is 5.5A.
REV1.0 G-53-5 NIKO-SEM N-Channel Enhancement Mode Field Effect Transistor PC5M0EA SOT-89 Halogen-Free & Lead-Free 0369 1 2 1 5 VDS=10V ID=4A CISS COSS CRSS 100 200 300 400 500 0 5 10 15 20 25 25℃ 125℃ -20℃ 012345 0.04 0.08 0.12 0.16 0.2 02468 1 0 ID=4A VGS=2.5V 0.02 0.04 0.06 0.08 0.1 048 1 2 1 6 VGS=10V VGS=4.5V 012345 VGS=10V VGS=9V VGS=7V VGS=5V VGS=4.5V VGS=2.5V VGS=2V VGS=1.8V On-Resistance VS Gate-To-Source RDS(ON)ON-Resistance(OHM) On-Resistance VS Drain Current RDS(ON)ON-Resistance(OHM) ID , Drain-To-Source Current(A)VGS, Gate-To-Source Voltage(V) Output Characteristics ID, Drain-To-Source Current(A) Transfer Characteristics ID, Drain-To-Source Current(A) VGS, Gate-To-Source Voltage(V) VDS, Drain-To-Source Voltage(V) Capacitance Characteristic C , Capacitance(pF) VDS, Drain-To-Source Voltage(V) Gate charge Characteristics VGS , Gate-To-Source Voltage(V) Qg , Total Gate Charge(nC)
REV1.0 G-53-5 NIKO-SEM N-Channel Enhancement Mode Field Effect Transistor PC5M0EA SOT-89 Halogen-Free & Lead-Free DC 100ms 10ms 1ms 0.1 100 0.1 1 10 100 NOTE : 1.VGS= 10V 2.TA=25˚C 3.RθJA = 54˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON) 0.001 0.01 0.1 1 10 100 Single Pulse RθJA = 54˚C/W TA=25˚C 25℃ 150℃ 0.1 100 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 -25 0 25 50 75 100 125 150 VGS=10V ID=4A r(t) , Normalized Effective Transient Thermal Resistance single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJA = 54 ℃/W 3.TJ-TA = P*RthJA(t) 4.RthJA(t) = r(t)*RthJA On-Resistance VS Temperature Normalized Drain to Source ON-Resistance TJ , Junction Temperature(˚C) Source-Drain Diode Forward Voltage IS , Source Current(A) Safe Operating Area Single Pulse Maximum Power Dissipation ID , Drain Current(A) Power(W) Single Pulse Time(s) VDS, Drain-To-Source Voltage(V) Transient Thermal Response Curve T1 , Square Wave Pulse Duration[sec] VSD, Source-To-Drain Voltage(V)