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REV 1.0 H-7-3 N-Channel Enhancement Mode Field Effect Transistor P1210BKA PDFN 5x6P Halogen-Free & Lead-Free NIKO-SEM G DDDD SSS#1 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage V DS 100 V Gate-Source Voltage V GS ±20 V Continuous Drain Current TC = 25 °C ID A TC = 100 °C 27 Pulsed Drain Current1 I DM 110 Continuous Drain Current TA = 25 °C ID 9.3 TA = 70 °C 7.5 Avalanche Current I AS 15 Avalanche Energy L = 1mH E AS 112 mJ Power Dissipation TC = 25 °C PD W TC = 100 °C 20 Power Dissipation3 TA = 25 °C PD 2.2 W TA = 70 °C 1.4 Operating Junction & Storage Temperature Range T j, Tstg -55 to 150 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Ambient2 t ≦10s RJA 35 °C / W Junction-to-Ambient2 Steady-State RJA 55 Junction-to-Case Steady-State RJC 2.5 1Pulse width limited by maximum junction temperature. 2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. 3The Power dissipation is based on RJA t ≦10s value. G. GATE D. DRAIN S. SOURCE PRODUCT SUMMARY V(BR)DSS R DS(ON) I D 100V 12mΩ 44A G D S
REV 1.0 H-7-3 N-Channel Enhancement Mode Field Effect Transistor P1210BKA PDFN 5x6P Halogen-Free & Lead-Free NIKO-SEM ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNITMIN TYP MAX STATIC Drain-Source Breakdown Voltage V (BR)DSS VGS = 0V, ID = 250A 100 V Gate Threshold Voltage V GS(th) VDS = VGS, ID = 250A 1.4 1.8 2.4 Gate-Body Leakage I GSS V DS = 0V, VGS = ±20V ±100 nA Zero Gate Voltage Drain Current I DSS VDS =80V, VGS = 0V 1 VDS = 80V, VGS = 0V, TJ = 55 °C 10 Drain-Source On-State Resistance1 RDS(ON) VGS = 10V, ID = 12A 9.5 12 mΩ VGS = 4.5V, ID = 10A 11 15 Forward Transconductance1 g fs V DS = 5V, ID = 12A 57 S DYNAMIC Input Capacitance C iss VGS = 0V, VDS = 50V, f = 1MHz 2017 pFOutput Capacitance C oss 185 Reverse Transfer Capacitance C rss 9.6 Gate Resistance R g V GS = 0V, VDS = 0V, f = 1MHz 1.8 Ω Total Gate Charge2 Q g VGS = 10V VDS = 50V , VGS = 10V, ID = 12A nC VGS = 4.5V 16.4 Gate-Source Charge2 Q gs 4.9 Gate-Drain Charge2 Q gd 5.9 Turn-On Delay Time2 t d(on) VDS = 50V , ID 12A, VGS = 10V, RGEN =6Ω nS Rise Time2 t r 10 Turn-Off Delay Time2 t d(off) 30 Fall Time2 t f 11 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Continuous Current I S 41 A Forward Voltage1 V SD I F = 12A, VGS = 0V 1.2 V Reverse Recovery Time t rr IF = 12A, dlF/dt = 100A / S 54 nS Reverse Recovery Charge Q rr 70 nC 1Pulse test : Pulse Width 300 sec, Duty Cycle 2％. 2Independent of operating temperature.
REV 1.0 H-7-3 N-Channel Enhancement Mode Field Effect Transistor P1210BKA PDFN 5x6P Halogen-Free & Lead-Free NIKO-SEM 0.01 0.02 0.03 0.04 0.05 2468 1 0 ID=12A 0.004 0.008 0.012 0.016 0.02 0 6 12 18 24 30 VGS=10V VGS=4.5V 0123456 VGS=10V VGS=9V VGS=8V VGS=7V VGS=6V VGS=5V VGS=4.5V VGS=2.5V VGS=2.7V 25℃ 125℃ -20℃ 012345 0 7 14 21 28 35 VDS=50V ID=12A CISS COSS CRSS 500 1000 1500 2000 2500 0 1 02 03 04 05 0 On-Resistance VS Gate-To-Source RDS(ON)ON-Resistance(OHM) On-Resistance VS Drain Current RDS(ON)ON-Resistance(OHM) ID , Drain-To-Source Current(A)VGS, Gate-To-Source Voltage(V) Output Characteristics ID, Drain-To-Source Current(A) Transfer Characteristics ID, Drain-To-Source Current(A) VGS, Gate-To-Source Voltage(V) VDS, Drain-To-Source Voltage(V) Capacitance Characteristic C , Capacitance(pF) VDS, Drain-To-Source Voltage(V) Gate charge Characteristics VGS , Gate-To-Source Voltage(V) Qg , Total Gate Charge(nC)
REV 1.0 H-7-3 N-Channel Enhancement Mode Field Effect Transistor P1210BKA PDFN 5x6P Halogen-Free & Lead-Free NIKO-SEM single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJA = 55 ℃/W 3.TJ-TA = P*RthJA(t) 4.RthJA(t) = r(t)*RthJA 100 0.001 0.01 0.1 1 10 100 Single Pulse RθJA = 55˚C/W TA=25˚C DC 100ms 10ms 1ms 0.01 0.1 100 1000 0.1 1 10 100 1000 NOTE : 1.VGS= 10V 2.TA=25˚C 3.RθJA = 55˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON) 25℃ 150℃ 0.1 100 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 -50 -25 0 25 50 75 100 125 150 VGS=10V ID=12A TJ , Junction Temperature(˚C) Safe Operating Area Single Pulse Maximum Power Dissipation ID , Drain Current(A) Power(W) Single Pulse Time(s) VDS, Drain-To-Source Voltage(V) Transient Thermal Response Curve VSD, Source-To-Drain Voltage(V) On-Resistance VS Temperature Normalized Drain to Source ON-Resistance Source-Drain Diode Forward Voltage IS , Source Current(A) r(t) , Normalized Effective Transient Thermal Resistance T1 , Square Wave Pulse Duration[sec]